OM7860/BGA3018,598

1. Product profile
1.1 General description
The BGA3018 MMIC is a wideband amplifier with internal biasing. It is designed
specifically for high linearity CATV line extenders and drop amplifiers over a frequency
range of 5 MHz to 1006 MHz. The LNA is housed in a lead free 3-pin SOT89 package.
1.2 Features and benefits
1.3 Applications
General wideband amplifiers.
CATV return amplifier; frequency ranges of 5 MHz to 300 MHz.
CATV infrastructure network driver in optical nodes (FTTx), distribution amplifiers,
trunk amplifiers and line extenders in the frequency range from 40 MHz to 1006 MHz.
The product is ideally suited for applications as drop amplifiers in CATV distribution
systems such as FTTH
1.4 Quick reference data
[1] The fundamental frequencies (f
1
) and (f
2
) lay between 40 MHz and 1006 MHz. The intermodulation product (IM3) is 2 f
2
f
1
, where
f
2
=f
1
6 MHz. Input power P
i
= 20 dBm.
[2] The fundamental frequencies (f
1
) and (f
2
) lay between 40 MHz and 1006 MHz. The intermodulation product (IM2) is f
2
f
1
, with
40 MHz < f
1
-f
2
< 1006 MHz. Input power P
i
= 20 dBm.
BGA3018
1 GHz 18 dB gain wideband amplifier MMIC
Rev. 3 — 26 September 2013 Product data sheet
SOT89
Internally biased Noise figure of 2.1 dB
Flat gain 75 input and output impedance
High linearity with an IP3
O
of 40 dBm and
an IP2
O
of 60 dBm
Operating from 5 V to 8 V supply
Table 1. Quick reference data
Bandwidth 40 MHz to 1006 MHz; T
amb
=25
C; typical values at V
CC
= 8 V; Z
S
=Z
L
=75
; R1 = 470
; R2 = 300
.
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage RF input AC coupled 7.6 8 8.4 V
I
CC(tot)
total supply current - 120 135 mA
T
amb
ambient temperature 40 - +85 C
NF noise figure f = 500 MHz - 2.1 2.6 dB
P
L(1dB)
output power at 1 dB gain compression 23.5 25 - dBm
IP3
O
output third-order intercept point
[1]
36 40 - dBm
IP2
O
output second-order intercept point
[2]
-60- dBm
BGA3018 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 3 — 26 September 2013 2 of 15
NXP Semiconductors
BGA3018
1 GHz 18 dB gain wideband amplifier MMIC
2. Pinning information
[1] This pin is DC-coupled and requires an external DC-blocking capacitor.
[2] The center metal base of the SOT89 also functions as heatsink for the power amplifier.
3. Ordering information
4. Marking
5. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 RF_OUT and biasing
[1]
2GND
[2]
3RF_IN
[1]
321
sym130
2
13
Table 3. Ordering information
Type number Package
Name Description Version
BGA3018 - plastic surface-mounted package; exposed die pad
for good heat transfer; 3 leads
SOT89
OM7860 EVB 1 GHz 18 dB gain wideband amplifier application -
OM7864 EVB 5 MHz to 300 MHz 18 dB reverse amplifier application -
OM7868 EVB 40 MHz to 1006 MHz push-pull amplifier application -
OM7861 EVB BGA301x wideband variable gain amplifier application -
Table 4. Marking codes
Type number Marking code Description
BGA3018 *6Y * = W : made in China
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage RF input AC coupled 0.6 +15 V
P
i
input power single tone - 20 dBm
T
stg
storage temperature 65 +150 C
T
j
junction temperature - 150 C
T
amb
ambient temperature 40 +85 C
V
ESD
electrostatic discharge
voltage
Human Body Model (HBM);
According JEDEC standard 22-A114E
2- kV
Charged Device Model (CDM);
According JEDEC standard 22-C101B
2- kV
BGA3018 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 3 — 26 September 2013 3 of 15
NXP Semiconductors
BGA3018
1 GHz 18 dB gain wideband amplifier MMIC
6. Thermal characteristics
7. Characteristics
7.1 Forward application
[1] The fundamental frequencies (f
1
) and (f
2
) lay between 40 MHz and 1006 MHz. The intermodulation product
(IM3) is 2 f
2
f
1
, where f
2
=f
1
6 MHz. Input power P
i
= 20 dBm.
[2] The fundamental frequencies (f
1
) and (f
2
) lay between 40 MHz and 1006 MHz. The intermodulation product
(IM2) is f
2
f
1
, with 40 MHz < f
1
-f
2
< 1006 MHz. Input power P
i
= 20 dBm.
[3] Measured with 132 NTSC channels V
O
= 30 dBmV.
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-sp)
thermal resistance from junction to solder point 40 K/W
Table 7. Characteristics at V
CC
= 8 V
Bandwidth 40 MHz to 1006 MHz; T
amb
= 25
C; typical values at V
CC
= 8 V; Z
S
=Z
L
=75
;
R1 = 470
; R2 = 300
.
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage RF input AC coupled 7.6 8 8.4 V
I
CC(tot)
total supply current - 120 135 mA
s
21
2
insertion power gain 17 18 19 dB
SL
sl
slope straight line - 0.5 - dB
FL flatness of frequency response - 0.5 - dB
NF noise figure f = 50 MHz - 1.9 2.4 dB
f = 500 MHz - 2.1 2.6 dB
f = 1000 MHz - 2.5 3.0 dB
RL
in
input return loss f = 50 MHz - 18.5 - dB
f = 500 MHz - 20 - dB
f = 1000 MHz - 28 - dB
RL
out
output return loss f = 50 MHz - 24 - dB
f = 500 MHz - 28 - dB
f = 1000 MHz - 16 - dB
P
L(1dB)
output power at 1 dB
gain compression
23.5 25 - dBm
IP3
O
output third-order intercept point
[1]
36 40 - dBm
IP2
O
output second-order intercept point
[2]
-60-dBm
CTB composite triple beat
[3]
- 75 - dBc
CSO composite second-order distortion
[3]
- 60 - dBc

OM7860/BGA3018,598

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
BOARD OM7860 BGA3018
Lifecycle:
New from this manufacturer.
Delivery:
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