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NSVIMD10AMT1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2014
May, 2014 − Rev. 1
Publication Order Number:
IMD10AMT1G/D
IMD10AMT1G
Dual Bias Resistor
Transistor
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias Resistor
Network
• High Current: I
C
= 500 mA max
• This is a Pb−Free Device
MAXIMUM RATINGS (T
A
= 25°C)
Rating
Symbol Value Unit
Collector−Base Voltage V
(BR)CBO
50 Vdc
Collector−Emitter Voltage V
(BR)CEO
50 Vdc
Emitter−Base Voltage V
(BR)EBO
5.0 Vdc
Collector Current − Continuous I
C
500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Power Dissipation* P
D
285 mW
Junction Temperature T
J
150 °C
Storage Temperature T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
*Total for both Transistors.
SC−74
MARKING
DIAGRAM
D10 M
G
D10 = Specific Device Code
M = Date Code
G = Pb−Free Package
Device Package Shipping
†
ORDERING INFORMATION
IMD10AMT1G SC−74R
(Pb−Free)
3000 / Tape & Reel
Q
1
http://onsemi.com
Q2
R1
R1
(3)
(5)
(1)
(6)
(2)
(4)
SC−74R
318AA
Style 21
1
6
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
R2
IMD10AMT1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
, − minus sign for Q
1
(PNP) omitted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Base Breakdown Voltage
(I
C
= 50 mAdc, I
E
= 0 A)
V
(BR)CBO
50 − Vdc
Collector−Emitter Breakdown Voltage
(I
C
= 1.0 mAdc, I
B
= 0 A)
V
(BR)CEO
50 − Vdc
Emitter−Base Breakdown Voltage
(I
E
= 50 mAdc, I
C
= 0 A)
V
(BR)EBO
5.0 − Vdc
Collector−Base Cutoff Current
(V
CB
= 50 Vdc, I
E
= 0 A)
I
CBO
− 100 nA
Emitter−Base Cutoff Current Q1 (PNP)
(V
EB
= 6.0 Vdc, I
C
= 0 A) Q2 (NPN)
I
EBO
−
−
1.0
0.5
mA
Collector−Emitter Cutoff Current
(V
CE
= 15 Vdc, I
B
= 0 A)
I
CEO
− 500 nA
Collector−Emitter Cutoff Current
(V
CE
= 25 Vdc, I
B
= 0 A)
I
CES
− 100 nA
ON CHARACTERISTICS (Note 1)
DC Current Gain
(V
CE
= 5.0 V, I
C
= 100 mA) Q1(PNP)
(V
CE
= 5.0 V, I
C
= 1.0 mA) Q2(NPN)
h
FE
68
100
−
600
Collector−Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 1.0 mA)
V
CE(sat)
− 0.3 Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
V
OL
− 0.2 Vdc
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kW)
V
OL
4.9 − Vdc
Input Resistor
Q1(PNP)
Q2(NPN)
R1
70
7.0
130
13
W
kW
Resistor Ratio
Q1(PNP)
Q2(NPN)
R1/R2
0.008
−
0.012
−
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle < 2.0%.
IMD10AMT1G
http://onsemi.com
3
TYPICAL CHARACTERISTICS (NPN)
Figure 1. DC Current Gain Figure 2. Collector−Emitter Saturation Voltage
I
C
, COLLECTOR CURRENT (mA) I
C
, COLLECTOR CURRENT (mA)
100101
10
100
1000
100101
0.01
0.1
1
10
Figure 3. Output Current vs. Input Voltage Figure 4. Input Voltage vs. Output Current
V
in
, INPUT VOLTAGE (V) I
C
, COLLECTOR CURRENT (mA)
43210
0.001
0.01
0.1
1
10
100
1000
100101
0.1
1
10
100
Figure 5. Output Capacitance
V
R
, REVERSE BIAS VOLTAGE (V)
50403020100
0
1
2
3
4
h
FE
, DC CURRENT GAIN
V
CE
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
I
C
, COLLECTOR CURRENT (mA)
V
in
, INPUT VOLTAGE (V)
C
ob
, CAPACITANCE (pF)
V
CE
= 5 V
75°C
25°C
−25°C
75°C
25°C
−25°C
I
C
/I
B
= 10
75°C
25°C
−25°C
V
O
= 5 V
75°C
25°C
−25°C
V
O
= 0.2 V
P1-P3P4-P5

NSVIMD10AMT1G

Mfr. #:
Buy NSVIMD10AMT1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased SURF MT BIASED RES XSTR
Lifecycle:
New from this manufacturer.
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