Features
Floating channel designed for bootstrap operation
Fully operational to +500V or +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V logic compatible
Separate logic supply range from 3.3V to 20V
Logic and power ground ±5V offset
CMOS Schmitt-triggered inputs with pull-down
Cycle by cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Outputs in phase with inputs
Data Sheet No. PD60147 rev.
U
HIGH AND LOW SIDE DRIVER
Product Summary
V
OFFSET
(IR2110) 500V max.
(IR2113) 600V max.
I
O
+/- 2A / 2A
V
OUT
10 - 20V
t
on/off
(typ.) 120 & 94 ns
Delay Matching (IR2110) 10 ns max.
(IR2113) 20ns max.
www.irf.com 1
Description
The IR2110/IR2113 are high voltage, high speed power MOSFET and
IGBT drivers with independent high and low side referenced output chan-
nels. Proprietary HVIC and latch immune CMOS technologies enable
ruggedized monolithic construction. Logic inputs are compatible with
standard CMOS or LSTTL output, down to 3.3V logic. The output
drivers feature a high pulse current buffer stage designed for minimum
driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The
floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which
operates up to 500 or 600 volts.
IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF


















(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical
connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.
Typical Connection
Packages
14-Lead PDIP
IR2110/IR2113
16-Lead SOIC
IR2110S/IR2113S
2 www.irf.com
IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The V
S
and V
SS
offset ratings are tested with all supplies biased at 15V differential. Typical
ratings at other bias conditions are shown in figures 36 and 37.
Note 1: Logic operational for V
S
of -4 to +500V. Logic state held for V
S
of -4V to -V
BS
. (Please refer to the Design Tip
DT97-3 for more details).
Note 2: When V
DD
< 5V, the minimum V
SS
offset is limited to -V
DD.
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Additional information is shown in Figures 28 through 35.
Symbol Definition Min. Max. Units
V
B
High side floating supply voltage (IR2110) -0.3 525
(IR2113) -0.3 625
V
S
High side floating supply offset voltage V
B
- 25 V
B
+ 0.3
V
HO
High side floating output voltage V
S
- 0.3 V
B
+ 0.3
V
CC
Low side fixed supply voltage -0.3 25
V
LO
Low side output voltage -0.3 V
CC
+ 0.3
V
DD
Logic supply voltage -0.3 V
SS
+ 25
V
SS
Logic supply offset voltage V
CC
- 25 V
CC
+ 0.3
V
IN
Logic input voltage (HIN, LIN & SD) V
SS
- 0.3 V
DD
+ 0.3
dV
s
/dt Allowable offset supply voltage transient (figure 2) 50 V/ns
P
D
Package power dissipation @ T
A
+25°C (14 lead DIP) 1.6
(16 lead SOIC) 1.25
R
THJA
Thermal resistance, junction to ambient (14 lead DIP) 75
(16 lead SOIC) 100
T
J
Junction temperature 150
T
S
Storage temperature -55 150
T
L
Lead temperature (soldering, 10 seconds) 300
°C/W
W
V
°C
Symbol Definition Min. Max. Units
V
B
High side floating supply absolute voltage V
S
+ 10 V
S
+ 20
V
S
High side floating supply offset voltage (IR2110) Note 1 500
(IR2113) Note 1 600
V
HO
High side floating output voltage V
S
V
B
V
CC
Low side fixed supply voltage 10 20
V
LO
Low side output voltage 0 VCC
V
DD
Logic supply voltage V
SS
+ 3 V
SS
+ 20
V
SS
Logic supply offset voltage -5 (Note 2) 5
V
IN
Logic input voltage (HIN, LIN & SD) V
SS
V
DD
T
A
Ambient temperature -40 125 °C
V
www.irf.com 3
IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF
Symbol Definition Figure Min. Typ. Max. Units Test Conditions
t
on
Turn-on propagation delay 7 120 150 V
S
= 0V
t
off
Turn-off propagation delay 8 94 125 V
S
= 500V/600V
t
sd
Shutdown propagation delay 9 110 140 V
S
= 500V/600V
t
r
Turn-on rise time 10 25 35
t
f
Turn-off fall time 11 17 25
MT Delay matching, HS & LS (IR2110) 10
turn-on/off (IR2113) 20
ns
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
, V
DD
) = 15V, C
L
= 1000 pF, T
A
= 25°C and V
SS
= COM unless otherwise specified. The dynamic
electrical characteristics are measured using the test circuit shown in Figure 3.
Symbol Definition Figure Min. Typ. Max. Units Test Conditions
V
IH
Logic “1” input voltage 12 9.5
V
IL
Logic “0” input voltage 13 6.0
V
OH
High level output voltage, V
BIAS
- V
O
14 1.2 I
O
= 0A
V
OL
Low level output voltage, V
O
15 0.1 I
O
= 0A
I
LK
Offset supply leakage current 16 50 V
B
=V
S
= 500V/600V
I
QBS
Quiescent V
BS
supply current 17 125 230 V
IN
= 0V or V
DD
I
QCC
Quiescent V
CC
supply current 18 180 340 V
IN
= 0V or V
DD
I
QDD
Quiescent V
DD
supply current 19 15 30 V
IN
= 0V or V
DD
I
IN+
Logic “1” input bias current 20 20 40 V
IN
= V
DD
I
IN-
Logic “0” input bias current 21 1.0 V
IN
= 0V
V
BSUV+
V
BS
supply undervoltage positive going 22 7.5 8.6 9.7
threshold
V
BSUV-
V
BS
supply undervoltage negative going 23 7.0 8.2 9.4
threshold
V
CCUV+
V
CC
supply undervoltage positive going 24 7.4 8.5 9.6
threshold
V
CCUV-
V
CC
supply undervoltage negative going 25 7.0 8.2 9.4
threshold
I
O+
Output high short circuit pulsed current 26 2.0 2.5 V
O
= 0V, V
IN
= V
DD
PW10 µs
I
O-
Output low short circuit pulsed current 27 2.0 2.5 V
O
= 15V, V
IN
= 0V
PW10 µs
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
, V
DD
) = 15V, T
A
= 25°C and V
SS
= COM unless otherwise specified. The V
IN
, V
TH
and I
IN
parameters
are referenced to V
SS
and are applicable to all three logic input leads: HIN, LIN and SD. The V
O
and I
O
parameters are
referenced to COM and are applicable to the respective output leads: HO or LO.
V
µA
V
A

IR2110PBF

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
Gate Drivers Hi&Lw Sd Drvr All HiVlt Pins 1 Sd
Lifecycle:
New from this manufacturer.
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