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STP8NK80ZFP

P1-P3P4-P6P7-P9P10-P12P13-P15
Electrical characteristics STP8NK80Z - STP8NK80ZFP - STW8NK80Z
4/15
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown voltage
I
D
=1mA, V
GS
= 0
800 V
I
DSS
Zero gate voltage
Drain current (V
GS
= 0)
V
DS
= Max rating
V
DS
= Max rating, @125°C
1
50
µA
µA
I
GSS
Gate-body leakage
Current (V
DS
= 0)
V
GS
= ± 20 V
± 10 µA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 100 µA
33.754.5 V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10 V, I
D
= 3.1 A
1.3 1.5 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance
V
DS
= 15v, I
D
= 3.1 A
5.2 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer capacitance
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0
1320
143
27
pF
pF
pF
C
oss eq.
(2)
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
.
Equivalent output
capacitance
V
DS
=0V, V
DS
= 0V to 640V
58 pF
t
d(on)
t
r
t
r(off)
t
r
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
= 400 V, I
D
= 3.1 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 21)
17
30
48
28
ns
ns
ns
ns
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 640 V, I
D
= 6.2 A,
V
GS
= 10 V
46
8.5
25
nC
nC
nC
t
r(Voff)
t
r
t
c
Off-voltage rise time
Fall time
Cross-over time
V
DD
= 640 V, I
D
= 6.2 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 23)
9
9
18
ns
ns
ns
STP8NK80Z - STP8NK80ZFP - STW8NK80Z Electrical characteristics
5/15
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
I
SDM
(1)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Source-drain current
Source-drain current (pulsed)
6.2
24.8
A
A
V
SD
(2)
2. Pulse width limited by safe operating area
Forward on voltage
I
SD
= 6.2 A, V
GS
= 0
1.6 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 6.2 A, di/dt = 100 A/µs
V
DD
= 50 V, Tj = 150°C
(see Figure 23)
460
2990
13
ns
nC
A
Table 8. Gate-source zener diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
BV
GSO
(1)
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Gate-source breakdown voltage Igs=± 1mA (Open Drain) 30 V
Electrical characteristics STP8NK80Z - STP8NK80ZFP - STW8NK80Z
6/15
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220
Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP
Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247
P1-P3P4-P6P7-P9P10-P12P13-P15

STP8NK80ZFP

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Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 800 Volt 6.2 A
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