OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

NSS35200MR6T1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 5
1 Publication Order Number:
NSS35200MR6/D
NSS35200MR6T1G
35 V, 5 A, Low V
CE(sat)
PNP Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical application are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS (T
A
= 25°C)
Rating Symbol Max Unit
Collector-Emitter Voltage V
CEO
−35 Vdc
Collector-Base Voltage V
CBO
−55 Vdc
Emitter-Base Voltage V
EBO
−5.0 Vdc
Collector Current − Continuous I
C
−2.0 Adc
Collector Current − Peak I
CM
−5.0 A
Electrostatic Discharge ESD HBM Class 3
MM Class C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
COLLECTOR
1, 2, 5, 6
3
BASE
4
EMITTER
35 VOLTS
5.0 AMPS
PNP LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
100 mW
Device
Package Shipping
†
ORDERING INFORMATION
NSS35200MR6T1G TSOP−6
(Pb−Free)
TSOP−6
CASE 318G
STYLE 6
3,000 /
Tape & Reel
MARKING DIAGRAM
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
VS8
M G
G
VS8 = Device Code
M = Date Code*
G = Pb−Free Package
(*Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
SNSS35200MR6T1G TSOP−6
(Pb−Free)
3,000 /
Tape & Reel
1
2
3
4
5
6
NSS35200MR6T1G
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
P
D
(Note 1)
625
5.0
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
(Note 1)
200
°C/W
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
P
D
(Note 2)
1.0
8.0
W
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
(Note 2)
120
°C/W
Thermal Resistance,
Junction−to−Lead #1
R
q
JL
80
°C/W
Total Device Dissipation
(Single Pulse < 10 sec.)
P
Dsingle
(Notes 2 & 3) 1.75
W
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 X 1.0 inch Pad.
3. Refer to Figure 8.
NSS35200MR6T1G
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typical Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= −10 mAdc, I
B
= 0)
V
(BR)CEO
−35 −45 −
Vdc
Collector−Base Breakdown Voltage
(I
C
= −0.1 mAdc, I
E
= 0)
V
(BR)CBO
−55 −65 −
Vdc
Emitter−Base Breakdown Voltage
(I
E
= −0.1 mAdc, I
C
= 0)
V
(BR)EBO
−5.0 −7.0 −
Vdc
Collector Cutoff Current
(V
CB
= −35 Vdc, I
E
= 0)
I
CBO
− −0.03 −0.1
mAdc
Collector−Emitter Cutoff Current
(V
CES
= −35 Vdc)
I
CES
− −0.03 −0.1
mAdc
Emitter Cutoff Current
(V
EB
= −4.0 Vdc)
I
EBO
− −0.01 −0.1
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 4)
(I
C
= −1.0 A, V
CE
= −1.5 V)
(I
C
= −1.5 A, V
CE
= −1.5 V)
(I
C
= −2.0 A, V
CE
= −3.0 V)
h
FE
100
100
100
200
200
200
−
400
−
Collector−Emitter Saturation Voltage (Note 4)
(I
C
= −0.8 A, I
B
= −0.008 A)
(I
C
= −1.2 A, I
B
= −0.012 A)
(I
C
= −2.0 A, I
B
= −0.02 A)
V
CE(sat)
−
−
−
−0.125
−0.175
−0.260
−0.15
−0.20
−0.31
V
Base −Emitter Saturation Voltage (Note 4)
(I
C
= −1.2 A, I
B
= −0.012 A)
V
BE(sat)
− −0.68 −0.85
V
Base −Emitter Turn−on Voltage (Note 4)
(I
C
= −2.0 A, V
CE
= −3.0 V)
V
BE(on)
− −0.81 −0.875
V
Cutoff Frequency
(I
C
= −100 mA, V
CE
= −5.0 V, f = 100 MHz)
f
T
100 − −
MHz
Input Capacitance (V
EB
= −0.5 V, f = 1.0 MHz) Cibo − 600 650 pF
Output Capacitance (V
CB
= −3.0 V, f = 1.0 MHz) Cobo − 85 100 pF
Turn−on Time (V
CC
= −10 V, I
B1
= −100 mA, I
C
= −1 A, R
L
= 3 W)
t
on
− 35 − nS
Turn−off Time (V
CC
= −10 V, I
B1
= I
B2
= −100 mA, I
C
= 1 A, R
L
= 3 W)
t
off
− 225 − nS
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
P1-P3P4-P6

NSS35200MR6T1G

Mfr. #:
Buy NSS35200MR6T1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 2A 35V Low VCEsat
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet