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STPS5H100AFY
P1-P3
P4-P6
P7-P8
June 2016
DocID029453 Rev 2
1/8
This is information on a pro
duct in full production.
www.st.com
ST
PS
5H
1
00
AF
Y
Automotive high voltag
e power Schottky rectifier
Datasheet - production data
Features
Negligible switching losses
High junction temperature capability
Low leakage current
Good trade-off between leakage c
urrent and
forward voltage drop
Avalanche specification
ECOPACK
®
compliant component
AEC
-Q101
PPAP capable
V
RRM
guaranteed from -40 to +175 °C
Description
This high voltage Schottky barrier
rectifier device
is packaged in SOD128Flat
and designed for
high frequency miniature switched mod
e power
supplies and for board DC
to DC converters for
automotive applications.
Table 1: Device summary
Symbol
Value
I
F(AV)
5 A
V
RRM
100 V
T
j
(max.)
175 °C
V
F
(typ.)
0.51 V
SOD128Flat
A
K
Characteristics
STPS5H100AFY
2/8
DocID029453 Rev 2
1
Characteristics
Table 2: Absolute ratings (limiting values at 25 °C, unless other
wise specified)
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage (T
j
=
-40 °C to +175 °C)
100
V
I
F(AV)
Average forward current
T
L
= 115 °C, δ = 0.5, square pulse
5
A
I
FSM
Surge non repetitive forward
current
t
p
= 10 ms sinusoidal
125
A
t
p
= 8.3 ms sinusoidal
130
P
ARM
Repetitive peak avalanche
power
t
p
= 10 µs, T
j
= 125 °C
300
W
T
stg
Storage temperature range
-65 to +175
°C
T
j
Operating junction temperature range
(1)
-40 to +175
°C
Notes:
(1)
(dP
tot
/dT
j
) < (1/R
th(j-
a)
) condition to avoid thermal
runaway for a diode on its own heatsink.
Table 3: Thermal parameters
Symbol
Parameter
Max.
value
Unit
R
th(j-
l)
Junction to lead
16
°C/W
Table 4: Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= 100 V
-
0.7
3.5
µA
T
j
= 125 °C
-
1
4
mA
T
j
= 150 °C
-
16
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 2.5 A
-
0.67
V
T
j
= 125 °C
-
0.51
0.55
T
j
= 25 °C
I
F
= 5 A
-
0.76
T
j
= 125 °C
-
0.57
0.61
Notes:
(1)
Pulse test: t
p
= 5 ms, δ < 2%
(2)
Pulse test: t
p
= 380 µs, δ < 2%
To evaluate the conduction losses us
e the following equation:
P = 0.49 x I
F(AV)
+ 0.024 x I
F
2
(RMS)
STPS5H100AFY
Characteristics
DocID029453 Rev 2
3/8
1.1
Characteristics (curves)
Figure 1: Average forward power dissipation
versus average forward current
Figure 2
:
Average forward current versus ambient
temperature (δ = 0.5)
Figure 3: Normalized avalanche power derating
versus pulse duration
Figure 4: Relative variation of thermal impedance
junction to lead versus pulse duration
Figure 5: Reverse leakage current versus reverse
voltage applied (typical values)
Figure 6: Junction capacitance versus reverse
voltage applied (typical values)
0
1
2
3
4
0
1
2
3
4
5
6
δ
= 0.05
δ
= 0.1
δ
= 0.2
δ
= 0.5
δ
= 1
T
δ
=
t
p/
T
t
p
P
F(A
V)
(W)
I
F(A
V)
(A)
0
2
4
6
8
10
12
0
25
50
75
100
125
150
175
R
th(
j-a)
= R
th(
j-l)
T
δ
=
t
p
/T
t
p
I
F(A
V)
(A)
T
a
m
b
(°
C)
P
(t
p
)
P
(10
µs)
ARM
ARM
0.001
0.01
0.1
1
1
10
100
1000
t
(µ
s
)
p
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
Single pulse
Z
th(j-l)
/R
th(j-l)
t
p
(s
)
1.E
-02
1.E
-01
1.E
+00
1.E
+01
1.E
+02
1.E
+03
1.E
+04
0
10
20
3
0
40
5
0
60
7
0
80
9
0
10
0
T
j
= 125 °C
T
j
= 25 °C
T
j
= 100 °C
T
j
= 50 °C
T
j
= 75 °C
T
j
= 150 °C
V
R
(V
)
I
R
(µA)
10
10
0
10
00
1
10
10
0
F = 1 MH
z
V
O
SC
= 30 mV
RM
S
T
j
= 25 °C
V
R
(V
)
C(pF)
P1-P3
P4-P6
P7-P8
STPS5H100AFY
Mfr. #:
Buy STPS5H100AFY
Manufacturer:
STMicroelectronics
Description:
Schottky Diodes & Rectifiers Automotive high voltage power Schottky rectifier
Lifecycle:
New from this manufacturer.
Delivery:
DHL
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Ups
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EMS
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