ESDLC3603P3-TP

ESDLC3603P3
ESD Protection
Device
www.mccsemi.com
Revision:A
2016/02/16
1 of 4
Maximum Ratings
DFN1616-6
Features
Low Capacitance 0.4pF typical(I/O to I/O
Low operating Voltage: 5.0 V
Low clamping voltage
unction Temperature: -55°C to +125°C
Parameter Symbol Limits unit
IEC61000-4-2(ESD)
Air
Contact
f
20
f
25
KV
Internal Structure
Suggested Solder
Pad Layout
(mm)
DIMENSIONS
INCHES MM
DIM
MIN MAX MIN MAX
NOTE
A 0.061 0.065 1.55 1.65
B
C
D
0.020 0.026 0.50 0.65
E
0.008 0.012 0.20 0.30
F
0.020 REF. 0.50 REF.
G
0.020 0.024
0.20 0.30
0.035 0.041 0.90 1.05
StorageTemperature: -55°C to +150°C
V
ESD
0.061 0.065 1.55 1.65
0.008 0.026
0.000 0.002
H
J
0.50 0.60
0.00 0.05
IEC61000−4−4 (EFT) 40A (5/50ns)
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Halogen free available upon request by adding suffix "-HF"
omponents
20736 Marilla Street Chatsworth
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Micro Commercial Components
M C C
R
1
Gnd
2
3
6
5
4
USB ID
DM
DP
NC
VBus
NC
1 2 3
GND
6
5.5V 36V
Circuit Diagram Pin Schematic
B
A
C
D
E
F
G
H
J
K
K
0.006 REF.
0.15 REF.
Marking: 3654P/3603
0.30
2.15
0.50
0.63
0.89
1.52
1.30
0.45
www.mccsemi.com
Revision: A
2016/02/16
2
of 4
ESDLC3603P3
Micro Commercial Components
M C C
R
Absolute Maximum Ratings (T
A
=25°C unless otherwise specified)
Electrical Characteristics (T
A
=25°C unless otherwise specified)
Parameter Symbol Value Unit
DP, DM, USB ID (Pins 1, 2, 3)
Peak Pulse Power (8/20µs) Ppk 100 W
Peak Pulse Current (8/20µs) IPP 5 A
ESD per IEC 61000−4−2 (Air)
ESD per IEC 61000−4−2 (Contact)
VESD
±25
±20
kV
Operating Temperature Range TJ −55 to +125 °C
Storage Temperature Range Tstg −55 to +150 °C
Peak Pulse Power (8/20µs) Ppk 300 W
Peak Pulse Current (8/20µs) IPP 4 A
ESD per IEC 61000−4−2 (Air)
ESD per IEC 61000−4−2 (Contact)
VESD
±25
±20
kV
Operating Temperature Range TJ −55 to +125 °C
Storage Temperature Range Tstg −55 to +150 °C
VBus (Pin 6)
Parameter Symbol Min Typ Max Unit Test Condition
Reverse Working Voltage VRWM 5.5 V Any I/O to ground
Breakdown Voltage VBR 6.5 V IT = 1mA, any I/O to ground
Reverse Leakage Current I
R
0.5 µA VRWM = 5.5V, any I/O to ground
Clamping Voltage VC 10 V
IPP = 1A (8 x 20µs pulse), any I/O
pin to ground
Clamping Voltage VC 20 V
IPP = 5A (8 x 20µs pulse), any I/O
pin to ground
Junction Capacitance CJ 0.5 pF
VR = 0V, f = 1MHz, between I/O
pins
Junction Capacitance CJ 0.8 pF
VR = 0V, f = 1MHz, any I/O pin to
ground
DP, DM, USB ID TVS
Note: I/O Pins are 1, 2, 3
www.mccsemi.com
Revision: A
2016/02/16
3
of 4
Micro Commercial Components
M C C
R
Parameter Symbol Min Typ Max Unit Test Condition
VBus TVS
Reverse Working Voltage VRWM 36 V Pin 6 to ground
Breakdown Voltage VBR 38 45 V IT = 1mA, pin 6 to ground
Reverse Leakage Current I
R
0.2 µA VRWM = 36V, pin 6 to ground
Clamping Voltage VC 50 V
IPP = 1A (8 x 20µs pulse), pin 6 to
ground
Clamping Voltage VC 75 V
IPP = 4A (8 x 20µs pulse), pin 6 to
ground
Junction Capacitance CJ 100 pF
VR = 0V, f = 1MHz, pin 6 to
ground
Electrical Characteristics (T
A
=25°C unless otherwise specified)
ESDLC3603P3

ESDLC3603P3-TP

Mfr. #:
Manufacturer:
Micro Commercial Components (MCC)
Description:
TVS Diodes / ESD Suppressors 5V&36V ESD Protectio n Device,
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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