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VBT760-E3/8W

P1-P3P4-P6
VT760-E3, VFT760-E3, VBT760-E3, VIT760-E3
www.vishay.com
Vishay General Semiconductor
Revision: 15-Dec-16
1
Document Number: 89130
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.50 V at I
F
= 5 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AC, ITO-220AC and TO-262AA
package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
7.5 A
V
RRM
60 V
I
FSM
100 A
V
F
at I
F
= 7.5 A 0.60 V
T
J
max. 150 °C
Package
TO-220AC, ITO-220AC,
TO-263AB, TO-262AA
Diode variations Single die
TO-220AC
NC
K
K
A
TO-263AB
NC
A
K
TO-262AA
PIN 1
CASE
PIN 2
PIN 1
PIN 2
TMBS
®
ITO-220AC
VT760
VFT760
VIT760VBT760
K
HEATSINK
A
NC
NC
A
K
HEATSINK
1
2
1
2
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VT760 VFT760 VBT760 VIT760 UNIT
Maximum repetitive peak reverse voltage V
RRM
60 V
Maximum average forward rectified current (fig. 1) I
F(AV)
7.5 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
100 A
Non-repetitive avalanche energy
at T
J
= 25 °C, L = 60 mH
E
AS
65 mJ
Peak repetitive reverse current
at t
p
= 2 μs, 1 kHz, T
J
= 38 °C ± 2 °C
I
RRM
1.0 A
Isolation voltage (ITO-220AB only)
from terminal to heat sink t = 1 min
V
AC
1500 V
Operating junction and storage temperature range T
J
, T
STG
-55 to +150 °C
VT760-E3, VFT760-E3, VBT760-E3, VIT760-E3
www.vishay.com
Vishay General Semiconductor
Revision: 15-Dec-16
2
Document Number: 89130
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Breakdown voltage I
R
= 1.0 mA T
A
= 25 °C V
BR
60 (minimum) - V
Instantaneous forward voltage
(1)
I
F
= 5 A
I
F
= 7.5 A
T
A
= 25 °C
V
F
0.58
0.67
-
0.80
V
I
F
= 5 A
I
F
= 7.5 A
T
A
= 125 °C
0.50
0.60
-
0.72
Reverse current
(2)
V
R
= 60 V
T
A
= 25 °C
T
A
= 125 °C
I
R
-
6.6
700
25
μA
p
mA
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VT760 VFT760 VBT760 VIT760 UNIT
Typical thermal resistance R
JC
3.5 6.5 3.5 3.5 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AC VT760-E3/4W 1.87 4W 50/tube Tube
ITO-220AC VFT760-E3/4W 1.68 4W 50/tube Tube
TO-263AB VBT760-E3/4W 1.39 4W 50/tube Tube
TO-263AB VBT760-E3/8W 1.39 8W 800/reel Tape and reel
TO-262AA VIT760-E3/4W 1.45 4W 50/tube Tube
VT760-E3, VFT760-E3, VBT760-E3, VIT760-E3
www.vishay.com
Vishay General Semiconductor
Revision: 15-Dec-16
3
Document Number: 89130
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Dissipation Characteristics
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Transient Thermal Impedance
Fig. 6 - Typical Junction Capacitance
Case Temperature (°C)
Average Forward Rectified Current (A)
9
4
0
25 50 75 100 125
VFT760
Mounted on Specific Heatsink
3
2
1
8
7
6
5
0 150
V(B,I)T760
0
1
3
5
7
09
Average Forward Current (A)
Average Power Disspation (W)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
2
4
6
D = t
p
/T t
p
T
87654321
D = 1.0
Instantaneous Forward Voltage (V)
0 0.2 0.4 0.8 1.2 1.4
100
10
0.1
0.001
T
A
= 100 °C
T
A
= 25 °C
0.6 1.0
T
A
= 150 °C
T
A
= 125 °C
Instantaneous Forward Current (A)
1
0.01
20 30 40
50
60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
T
A
= 150 °C
T
A
= 25 °C
T
A
= 100 °C
T
A
= 125 °C
1
0.1
0.01
0.001
100
10
10
1
0.01 0.1 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
V(B,I)T760
Junction to Case
VFT760
1000
10 000
0.1 1 10 100
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
10
100
P1-P3P4-P6

VBT760-E3/8W

Mfr. #:
Buy VBT760-E3/8W
Manufacturer:
Vishay / Siliconix
Description:
Rectifiers 7.5A,60V,SINGLE TRENCH SKY RECT.
Lifecycle:
New from this manufacturer.
Delivery:
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