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PBSS4041NT,215

P1-P3P4-P6P7-P9P10-P12P13-P15
PBSS4041NT_1 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 31 January 2010 6 of 14
NXP Semiconductors
PBSS4041NT
60 V, 3.8 A NPN low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
=60V; I
E
= 0 A - - 100 nA
V
CB
=60V; I
E
=0A;
T
j
=150°C
--50μA
I
CES
collector-emitter
cut-off current
V
CE
=48V; V
BE
= 0 V - - 100 nA
I
EBO
emitter-base cut-off
current
V
EB
=5V; I
C
= 0 A - - 100 nA
h
FE
DC current gain V
CE
=2V; I
C
= 500 mA 300 500 -
V
CE
=2V; I
C
=1A
[1]
250 400 -
V
CE
=2V; I
C
=2A
[1]
120 170 -
V
CE
=2V; I
C
=4A
[1]
30 50 -
V
CEsat
collector-emitter
saturation voltage
I
C
= 500 mA; I
B
= 50 mA - 29 40 mV
I
C
=1A; I
B
=50mA
[1]
-5780mV
I
C
=1A; I
B
=10mA
[1]
- 100 140 mV
I
C
=2A; I
B
=40mA
[1]
- 135 190 mV
I
C
=4A; I
B
=200mA
[1]
- 215 300 mV
I
C
=3A; I
B
=300mA
[1]
- 140 200 mV
R
CEsat
collector-emitter
saturation resistance
I
C
=3A; I
B
=300mA
[1]
-4666mΩ
V
BEsat
base-emitter
saturation voltage
I
C
=1A; I
B
=100mA
[1]
- 0.94 1.05 V
I
C
=3A; I
B
=300mA
[1]
-1.11.2V
I
C
=4A; I
B
=400mA
[1]
-1.21.3V
V
BEon
base-emitter turn-on
voltage
V
CE
=2V; I
C
= 2 A - 0.83 0.9 V
t
d
delay time V
CC
=12.5V; I
C
=1A;
I
Bon
=0.05A;
I
Boff
= −0.05 A
-13-ns
t
r
rise time - 140 - ns
t
on
turn-on time - 153 - ns
t
s
storage time - 735 - ns
t
f
fall time - 320 - ns
t
off
turn-off time - 1055 - ns
f
T
transition frequency V
CE
=10V;
I
C
= 100 mA;
f=100MHz
- 175 - MHz
C
c
collector capacitance V
CB
=10V; I
E
=i
e
=0A;
f=1MHz
-17-pF
PBSS4041NT_1 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 31 January 2010 7 of 14
NXP Semiconductors
PBSS4041NT
60 V, 3.8 A NPN low V
CEsat
(BISS) transistor
V
CE
=2V
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
Fig 5. DC current gain as a function of collector
current; typical values
Fig 6. Collector current as a function of
collector-emitter voltage; typical values
V
CE
=2V
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
I
C
/I
B
=20
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
Fig 7. Base-emitter voltage as a function of collector
current; typical values
Fig 8. Base-emitter saturation voltage as a function
of collector current; typical values
006aac020
400
600
200
800
1000
h
FE
0
I
C
(mA)
10
−1
10
4
10
3
110
2
10
(1)
(3)
(2)
V
CE
(V)
054231
006aac021
2
3
1
4
5
I
C
(A)
0
I
B
(mA) = 50
45
40
35
30
25
20
15
10
5
006aac022
1.0
0.6
1.4
1.8
V
BE
(V)
0.2
I
C
(mA)
10
−1
10
4
10
3
110
2
10
(1)
(3)
(2)
006aac023
0.6
1.0
1.4
V
BEsat
(V)
0.2
I
C
(mA)
10
−1
10
4
10
3
110
2
10
(1)
(3)
(2)
PBSS4041NT_1 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 31 January 2010 8 of 14
NXP Semiconductors
PBSS4041NT
60 V, 3.8 A NPN low V
CEsat
(BISS) transistor
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
=50
(3) I
C
/I
B
=10
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
=50
(3) I
C
/I
B
=10
Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
006aac024
10
−1
10
−2
1
V
CEsat
(V)
10
−3
I
C
(mA)
10
−1
10
4
10
3
110
2
10
(1)
(2)
(3)
006aac025
10
−1
10
−2
1
V
CEsat
(V)
10
−3
I
C
(mA)
10
−1
10
4
10
3
110
2
10
(1)
(2)
(3)
I
C
(mA)
10
−1
10
4
10
3
110
2
10
006aac026
1
10
−1
10
2
10
10
3
R
CEsat
(Ω)
10
−2
(1)
(2)
(3)
I
C
(mA)
10
−1
10
4
10
3
110
2
10
006aac027
1
10
−1
10
2
10
10
3
R
CEsat
(Ω)
10
−2
(1)
(2)
(3)
P1-P3P4-P6P7-P9P10-P12P13-P15

PBSS4041NT,215

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Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT BISS Transistor Load Switch
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