NCN6010
http://onsemi.com
3
PIN DESCRIPTIONS
Pin Name Type Description
1 V
DD
POWER This pin is connected to the system controller power supply suitable to operate from a
3.6 V typical battery. A low ESR ceramic capacitor (4.7 mF typical) shall be used to bypass
the power supply voltage.
2 STOP INPUT A Low level on this pin resets the SIM interface, switching off the SIM_VCC, according to
the ISO7816-3 Power Down procedure (See Table 1 and Figure 3).
3 MOD_V
CC
INPUT The signal present on this pin programs the SIM_VCC value (See Table 1):
MOD_VCC = L → SIM_VCC = 5.0 V
MOD_VCC = H → SIM_VCC = 3.0 V
4 PWR_ON INPUT The signal present on this pin controls the SIM_VCC state (See Table 1):
PWR_ON = L → SIM_VCC = Open, no supply connected to the SIM card.
PWR_ON = H → SIM_VCC = Active, the card is powered.
5 I/O INPUT This pin is connected to an external microcontroller or GSM management unit. A
bi-directional level translator adapts the serial I/O signal between the smart card and the
external controller. A built-in constant 20 kW (typical) resistor provides a high impedance
state when not activated.
6 CLOCK INPUT The clock signal, coming from the external controller, must have a Duty Cycle within the
Min/Max values defined by the specification (typically 50%). The built-in level shifter
translates the input signal to the external SIM card CLK input.
7 RESET INPUT The RESET signal present at this pin is connected to the SIM card. The internal level
shifter translates the level according to the voltages present at pin 1 and the SIM_VCC
programmed value.
8 SIM_RST OUTPUT This pin is connected to the RESET pin of the card connector. A level translator adapts the
external RESET signal to the SIM card. A built-in active pull down connects this pin to
ground when the device is in a nonoperating mode.
9 SIM_CLK OUTPUT This pin is connected to the CLK pin of the card connector. The CLOCK signal comes from
the external clock generator, the internal level shifter being used to adapt the voltage
defined for the SIM_VCC. A built-in active pull down connects this pin to ground when the
device is in a nonoperating mode.
10 GND GROUND This pin is the GROUND reference for the integrated circuit and associated signals. Cares
must be observed to avoid voltage spikes when the device operates in a normal operation.
11 SIM_I/O This pin handles the connection to the serial I/O of the card connector. A bi-directional
level translator adapts the serial I/O signal between the card and the microcontroller. A 20
kW (typical) pull up resistor provides a High impedance state for the SIM card I/O link.
12 Cta POWER This pin is connected to the external capacitor used by the internal Charge Pump
converter. Using Low ESR ceramic type is recommended (X5R or X7R).
13 Ctb POWER This pin is connected to the external capacitor used by the internal Charge Pump
converter. Using Low ESR ceramic type is recommended (X5R or X7R).
14 SIM_VCC POWER This pin is connected to the SIM card power supply pin. An internal Charge Pump
converter is programmable by the external MPU to supply either 3.0 V or 5.0 V output
voltage. An external 1.0 mF minimum ceramic capacitor (ESR t 100 mW, X5R or X7R
recommended) must be connected across SIM_VCC and GND.
During a normal operation, the SIM_VCC voltage can be set to 3.0 V followed by a 5.0 V
value, or can start directly to any of these two values. When the voltage is adjusted
downward (from 5.0 V to 3.0 V) cares must be observed as reverse peak current can flow
from the external capacitors to the battery during a short amount of time (in the 1.0 ms
range). When such a voltage adjustment is necessary, it is recommended to force
SIM_VCC to zero, wait 350 ms minimum, then reprogram the chip to get SIM_VCC = 3.0 V.
