74HC_HCT2G126 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 5 — 18 December 2013 4 of 15
NXP Semiconductors 74HC2G126; 74HCT2G126
Dual buffer/line driver; 3-state
9. Recommended operating conditions
10. Static characteristics
Table 6. Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 74HC2G126 74HCT2G126 Unit
Min Typ Max Min Typ Max
V
CC
supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V
V
I
input voltage 0 - V
CC
0-V
CC
V
V
O
output voltage 0 - V
CC
0-V
CC
V
T
amb
ambient temperature 40 +25 +125 40 +25 +125 C
t/V input transition rise
and fall rate
V
CC
= 2.0 V - - 625 - - - ns/V
V
CC
= 4.5 V - 1.67 139 - 1.67 139 ns/V
V
CC
= 6.0 V - - 83 - - - ns/V
Table 7. Static characteristics
Voltages are referenced to GND (ground = 0 V). All typical values are measured at T
amb
=25
C.
Symbol Parameter Conditions T
amb
= 40 C to +85 C T
amb
= 40 C to +125 C Unit
Min Typ Max Min Max
74HC2G126
V
IH
HIGH-level input
voltage
V
CC
= 2.0 V 1.5 1.2 - 1.5 - V
V
CC
= 4.5 V 3.15 2.4 - 3.15 - V
V
CC
= 6.0 V 4.2 3.2 - 4.2 - V
V
IL
LOW-level input
voltage
V
CC
= 2.0 V - 0.8 0.5 - 0.5 V
V
CC
= 4.5 V - 2.1 1.35 - 1.35 V
V
CC
= 6.0 V - 2.8 1.8 - 1.8 V
V
OH
HIGH-level
output voltage
V
I
= V
IH
or V
IL
I
O
= 20 A; V
CC
= 2.0 V 1.9 2.0 - 1.9 - V
I
O
= 20 A; V
CC
= 4.5 V 4.4 4.5 - 4.4 - V
I
O
= 20 A; V
CC
= 6.0 V 5.9 6.0 - 5.9 - V
I
O
= 6.0 mA; V
CC
= 4.5 V 3.84 4.32 - 3.7 - V
I
O
= 7.8 mA; V
CC
= 6.0 V 5.34 5.81 - 5.2 - V
V
OL
LOW-level output
voltage
V
I
= V
IH
or V
IL
I
O
= 20 A; V
CC
= 2.0 V - 0 0.1 - 0.1 V
I
O
= 20 A; V
CC
= 4.5 V - 0 0.1 - 0.1 V
I
O
= 20 A; V
CC
= 6.0 V - 0 0.1 - 0.1 V
I
O
= 6.0 mA; V
CC
= 4.5 V - 0.15 0.33 - 0.4 V
I
O
= 7.8 mA; V
CC
= 6.0 V - 0.16 0.33 - 0.4 V
I
I
input leakage
current
V
I
=V
CC
or GND; V
CC
=6.0V - - 1.0 - 1.0 A
I
OZ
OFF-state output
current
V
I
= V
IH
or V
IL
;
V
O
=V
CC
or GND; V
CC
= 6.0 V
--5.0 - 10 A
74HC_HCT2G126 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 5 — 18 December 2013 5 of 15
NXP Semiconductors 74HC2G126; 74HCT2G126
Dual buffer/line driver; 3-state
11. Dynamic characteristics
I
CC
supply current V
I
=V
CC
or GND; I
O
=0A;
V
CC
=6.0V
--10 - 20A
C
I
input capacitance - 1.0 - - - pF
C
O
output
capacitance
-1.5- - - pF
74HCT2G126
V
IH
HIGH-level input
voltage
V
CC
= 4.5 V to 5.5 V 2.0 1.6 - 2.0 - V
V
IL
LOW-level input
voltage
V
CC
= 4.5 V to 5.5 V - 1.2 0.8 - 0.8 V
V
OH
HIGH-level
output voltage
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
= 20 A 4.4 4.5 - 4.4 - V
I
O
= 6.0 mA 3.84 4.32 - 3.7 - V
V
OL
LOW-level output
voltage
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
= 20 A - 0 0.1 - 0.1 V
I
O
= 6.0 mA - 0.16 0.33 - 0.4 V
I
I
input leakage
current
V
I
=V
CC
or GND; V
CC
=5.5V - - 1.0 - 1.0 A
I
OZ
OFF-state output
current
V
I
= V
IH
or V
IL
; V
O
=
V
CC
or GND; V
CC
= 5.5 V
--5.0 - 10
I
CC
supply current V
I
=V
CC
or GND; I
O
=0A;
V
CC
=5.5V
--10 - 20A
I
CC
additional supply
current
per input; V
CC
= 4.5 V to 5.5 V;
V
I
=V
CC
2.1 V; I
O
=0A
- - 375 - 410 A
C
I
input capacitance - 1.0 - - - pF
C
O
output
capacitance
-1.5- - - pF
Table 7. Static characteristics …continued
Voltages are referenced to GND (ground = 0 V). All typical values are measured at T
amb
=25
C.
Symbol Parameter Conditions T
amb
= 40 C to +85 C T
amb
= 40 C to +125 C Unit
Min Typ Max Min Max
Table 8. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); C
L
= 50 pF unless otherwise specified; for test circuit see Figure 8.
Symbol Parameter Conditions T
amb
= 40 C to +85 C T
amb
= 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
74HC2G126
t
pd
propagation
delay
nA to nY; see Figure 6
[2]
V
CC
= 2.0 V - 35 115 - 135 ns
V
CC
= 4.5 V - 11 23 - 27 ns
V
CC
= 5.0 V; C
L
=15pF - 10 - - - ns
V
CC
= 6.0 V - 8 20 - 23 ns
74HC_HCT2G126 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 5 — 18 December 2013 6 of 15
NXP Semiconductors 74HC2G126; 74HCT2G126
Dual buffer/line driver; 3-state
[1] All typical values are measured at T
amb
= 25 C.
[2] t
pd
is the same as t
PLH
and t
PHL
.
t
en
is the same as t
PZL
and t
PZH
.
t
dis
is the same as t
PLZ
and t
PHZ
.
t
t
is the same as t
THL
and t
TLH
.
[3] C
PD
is used to determine the dynamic power dissipation (P
D
in W).
P
D
=C
PD
V
CC
2
f
i
N+(C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V;
N = number of inputs switching;
(C
L
V
CC
2
f
o
) = sum of outputs.
t
en
enable time nOE to nY; see Figure 7
[2]
V
CC
= 2.0 V - 40 115 - 135 ns
V
CC
= 4.5 V - 11 23 - 27 ns
V
CC
= 6.0 V - 8 20 - 23 ns
t
dis
disable time nOE to nY; see Figure 7
[2]
V
CC
= 2.0 V - 25 125 - 150 ns
V
CC
= 4.5 V - 12 25 - 30 ns
V
CC
= 6.0 V - 10 21 - 26 ns
t
t
transition
time
nY; see Figure 6
[2]
V
CC
= 2.0 V - 18 75 - 90 ns
V
CC
= 4.5 V - 6 15 - 18 ns
V
CC
= 6.0 V - 5 13 - 15 ns
C
PD
power
dissipation
capacitance
per buffer; V
I
=GNDtoV
CC
[3]
output enabled - 11 - - - pF
output disabled - 1 - - - pF
74HCT2G126
t
pd
propagation
delay
nA to nY; see Figure 6
[2]
V
CC
= 4.5 V - 15 30 - 36 ns
V
CC
= 5.0 V; C
L
=15pF - 12 - - - ns
t
en
enable time nOE to nY; see Figure 7;
V
CC
=4.5V
[2]
- 11 31 - 38 ns
t
dis
disable time nOE to nY; see Figure 7;
V
CC
=4.5V
[2]
- 11 35 - 42 ns
t
t
transition
time
nY; see Figure 6; V
CC
= 4.5 V
[2]
-615 - 18ns
C
PD
power
dissipation
capacitance
per buffer;
V
I
=GNDtoV
CC
1.5 V
[3]
output enabled - 11 - - - pF
output disabled - 1 - - - pF
Table 8. Dynamic characteristics
…continued
Voltages are referenced to GND (ground = 0 V); C
L
= 50 pF unless otherwise specified; for test circuit see Figure 8.
Symbol Parameter Conditions T
amb
= 40 C to +85 C T
amb
= 40 C to +125 C Unit
Min Typ
[1]
Max Min Max

74HC2G126DP,125

Mfr. #:
Manufacturer:
Nexperia
Description:
Buffers & Line Drivers 5V 2 BUF/LN DRVR
Lifecycle:
New from this manufacturer.
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