Document Number: 74341
S12-0683-Rev. B, 26-Mar-12
www.vishay.com
5
Vishay Siliconix
SUP90N03-03
For more information please contact: pmostechsupport@vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
*The power dissipation P
D
is based on T
J(max)
= 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74341
Current Derating*
0
50
100
150
200
250
300
0 25 50 75 100 125 150 175
I
D
)A( tnerruC niarD -
T
C
- Case Temperature (°C)
Package Limited
Power Derating
0
50
100
150
200
250
300
0 25 50 75 100 125 150 175
C
- Case Temperature (°C)
)W( noitapissiD rewoP
T
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10
-
4
10
-
3
10
-
2
10
-
1
1
Normalized Effective Transient
Thermal Impedance
10
0.2
0.1
Duty Cycle = 0.5
Single Pulse
0.05
0.02
