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PBSS4041SP,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
PBSS4041SP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 18 October 2010 6 of 15
NXP Semiconductors
PBSS4041SP
60 V, 5.9 A PNP/PNP low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 8. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
I
CBO
collector-base
cut-off current
V
CB
= −60 V; I
E
=0A - - −100 nA
V
CB
= −60 V; I
E
=0A;
T
j
=150°C
--−50 μA
I
CES
collector-emitter
cut-off current
V
CE
= −48 V; V
BE
=0V - - −100 nA
I
EBO
emitter-base
cut-off current
V
EB
= −5V; I
C
=0A - - −100 nA
h
FE
DC current gain V
CE
= −2V
[1]
I
C
= −500 mA 200 300 -
I
C
= −1 A 180 270 -
I
C
= −2 A 150 250 -
I
C
= −4 A 120 180 -
I
C
= −6A 80 125 -
V
CEsat
collector-emitter
saturation voltage
[1]
I
C
= −1A; I
B
= −50 mA - −65 −90 mV
I
C
= −1A; I
B
= −10 mA - −130 −190 mV
I
C
= −2A; I
B
= −40 mA - −155 −230 mV
I
C
= −4A; I
B
= −200 mA - −220 −330 mV
I
C
= −4A; I
B
= −400 mA - −190 −275 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= −4A; I
B
= −400 mA
[1]
-4770mΩ
V
BEsat
base-emitter
saturation voltage
[1]
I
C
= −1A; I
B
= −100 mA - −0.84 −1V
I
C
= −4A; I
B
= −400 mA - −1 −1.2 V
V
BEon
base-emitter
turn-on voltage
V
CE
= −2V; I
C
= −2A
[1]
- −0.78 −0.85 V
t
d
delay time V
CC
= −12.5 V; I
C
= −1A;
I
Bon
= −0.05 A; I
Boff
=0.05A
-45-ns
t
r
rise time - 60 - ns
t
on
turn-on time - 105 - ns
t
s
storage time - 440 - ns
t
f
fall time - 75 - ns
t
off
turn-off time - 515 - ns
f
T
transition frequency V
CE
= −10 V; I
C
= −100 mA;
f=100MHz
-110-MHz
C
c
collector capacitance V
CB
= −10 V; I
E
=i
e
=0A;
f=1MHz
-85-pF
PBSS4041SP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 18 October 2010 7 of 15
NXP Semiconductors
PBSS4041SP
60 V, 5.9 A PNP/PNP low V
CEsat
(BISS) transistor
V
CE
= −2V
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
Fig 5. DC current gain as a function of collector
current; typical values
Fig 6. Collector current as a function of
collector-emitter voltage; typical values
V
CE
= −2V
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
I
C
/I
B
=20
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
Fig 7. Base-emitter voltage as a function of collector
current; typical values
Fig 8. Base-emitter saturation voltage as a function
of collector current; typical values
006aac338
200
300
100
400
500
h
FE
0
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(1)
(3)
(2)
V
CE
(V)
0.0 −5.0−4.0−2.0 −3.0−1.0
006aac339
−4.0
−6.0
−2.0
−8.0
−10.0
I
C
(A)
0.0
I
B
(mA) = −120
−12
−108
−24
−36
−60
−84
−48
−72
−96
006aac340
−0.4
−0.8
−1.2
V
BE
(V)
0.0
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(1)
(3)
(2)
006aac341
−0.6
−1.0
−1.4
V
BEsat
(V)
−0.2
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(2)
(1)
(3)
PBSS4041SP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 18 October 2010 8 of 15
NXP Semiconductors
PBSS4041SP
60 V, 5.9 A PNP/PNP low V
CEsat
(BISS) transistor
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
=50
(3) I
C
/I
B
=10
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
=50
(3) I
C
/I
B
=10
Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
006aac342
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
−10
−1
−1
V
CEsat
(V)
−10
−2
(1)
(2)
(3)
006aac343
−10
−1
−10
−2
−1
V
CEsat
(V)
−10
−3
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(1)
(3)
(2)
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
006aac344
1
10
−1
10
2
10
10
3
R
CEsat
(Ω)
10
−2
(2)
(1)
(3)
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
006aac345
1
10
−1
10
2
10
10
3
R
CEsat
(Ω)
10
−2
(2)
(1)
(3)
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PBSS4041SP,115

Mfr. #:
Buy PBSS4041SP,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT Dual PNP -60V -5.9A 0.73W 110MHz
Lifecycle:
New from this manufacturer.
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