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NTHS4111PT1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 2
1 Publication Order Number:
NTHS4111P/D
NTHS4111P
Power MOSFET
−30 V, −6.1 A, Single P−Channel, ChipFETt
Features
• Offers an Ultra Low R
DS(on)
Solution in the ChipFET Package
• ChipFET Package 40% Smaller Footprint than TSOP−6
• Low Profile (<1.1 mm) for Extremely Thin Environments
• Standard Logic Level Gate Drive
• Pb−Free Package is Available
Applications
• Notebook Computer Load Switch
• Battery and Load Management Applications in Portable Equipment
• Charge Control in Battery Chargers
• Buck and Boost Converters
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage V
DSS
−30 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25°C
I
D
−4.4
A
T
A
= 85°C −3.2
t ≤ 10 s T
A
= 25°C −6.1
Power Dissipation
(Note 1)
Steady
State
T
A
= 25°C P
D
1.3
W
t ≤ 10 s 2.5
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25°C
I
D
−3.3
A
T
A
= 85°C −2.3
Power Dissipation
(Note 2)
T
A
= 25°C P
D
0.7 W
Pulsed Drain Current
tp = 10 ms
I
DM
−30 A
Operating Junction and Storage Temperature T
J
,
T
STG
−55 to
150
°C
Source Current (Body Diode) I
S
−2.1 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
THERMAL RESISTANCE RATINGS
Rating Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
R
q
JA
95
°C/W
Junction−to−Ambient – t ≤ 10 s (Note 1)
R
q
JA
50
Junction−to−Ambient – Steady State (Note 2)
R
q
JA
175
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.045 in sq).
G
S
D
P−Channel MOSFET
Device Package Shipping
†
ORDERING INFORMATION
NTHS4111PT1 ChipFET 3000/Tape & Reel
http://onsemi.com
NTHS4111PT1G
ChipFET
(Pb−free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
−30 V
52 mW @ −4.5 V
33 mW @ −10 V
R
DS(on)
Typ
−6.1 A
I
D
Max
V
(BR)DSS
1
8
TH = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ChipFET
CASE 1206A
STYLE 1
S
D
G
D
D
D
D
D
1
2
3
45
6
7
8
PIN
CONNECTIONS
MARKING
DIAGRAM
TH M G
G
1
2
3
4
8
7
6
5
NTHS4111P
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= −250 mA
−30 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
−19 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= −24 V
T
J
= 25°C
−1.0
mA
T
J
= 125°C
−100
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±20 V ±100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= −250 mA
−1.0 −1.7 −3.0 V
Negative Threshold Temperature Coefficient V
GS(TH)
/T
J
5.0 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= −10 V, I
D
= −4.4 A 33 45
mW
V
GS
= −4.5 V, I
D
= −3.4 A 52 75
Forward Transconductance g
FS
V
DS
= −15 V, I
D
= −4.4 A 7.7 S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= −24 V
882 1500
pF
Output Capacitance C
OSS
143
Reverse Transfer Capacitance C
RSS
105
Total Gate Charge Q
G(TOT)
V
GS
= −10 V, V
DD
= −15 V,
I
D
= −4.4 A
18.2 28
nC
Gate−to−Source Charge Q
GS
2.95
Gate−to−Drain Charge Q
GD
4.25
SWITCHING CHARACTERISTICS, V
GS
= −10 V (Note 4)
Turn−On Delay Time
t
d(ON)
V
GS
= −10 V, V
DD
= −15 V,
I
D
= −1.0 A, R
G
= 6.0 W
9.0 18
ns
Rise Time t
r
8.0 16
Turn−Off Delay Time t
d(OFF)
45 90
Fall Time t
f
26 52
SWITCHING CHARACTERISTICS, V
GS
= −4.5 V (Note 4)
Turn−On Delay Time
t
d(ON)
V
GS
= −4.5 V, V
DD
= −15 V,
I
D
= −1.0 A, R
G
= 6.0 W
11
ns
Rise Time t
r
14
Turn−Off Delay Time t
d(OFF)
32
Fall Time t
f
23
DRAIN − SOURCE DIODE CHARACTERISTICS
Characteristic
Symbol Test Condition Min Typ Max Unit
Forward Diode Voltage V
SD
V
GS
= 0 V,
I
S
= −1.1 A
T
J
= 25°C
−0.76 −1.2
V
T
J
= 125°C
−0.60
Reverse Recovery Time t
RR
V
GS
= 0 V
dI
S
/dt = 100 A/ms, I
S
= −1.1 A
27 54
ns
Charge Time t
a
10
Discharge Time t
b
17
Reverse Recovery Charge Q
RR
12 nC
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTHS4111P
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES (T
J
= 25°C unless otherwise noted)
0
0.050
0.100
123456789101112
0.075
0.025
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
11
12
1.5 2.0 2.5 3.0 3.5
4.0
4.5
V
GS
= −10 V to −5.0 V
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
11
12
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
−55°C
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−I
D,
DRAIN CURRENT (AMPS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. R
DS(on)
vs. V
GS
−I
D,
DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
−50 0−25 25 50 125100
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
T
J
= 25°C
T
J
= 100°C
75 150
I
D
= −4.4 A
V
GS
= −10 V
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
25°C
−3.4 V
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−I
DSS
, LEAKAGE (nA)
−3.2 V
V
DS
= −15 V
−3.0 V
−3.6 V
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
−I
D,
DRAIN CURRENT (AMPS)
I
D
= −4.4 A
T
J
= 25°C
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
T
J
= 25°C
V
GS
= −4.5 V
V
GS
= −10 V
−3.8 V
−4.0 V
−4.2 V
−4.5 V
1.0
0.25
0.20
0.15
0.10
0.05
0
2345678910
1.5
0.5
1.25
1.00
0.75
100
1000
10000
100000
10 20 30
V
GS
= 0 V
T
J
= 100°C
T
J
= 150°C
P1-P3P4-P6

NTHS4111PT1G

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Manufacturer:
ON Semiconductor
Description:
MOSFET P-CH 30V 3.3A CHIPFET
Lifecycle:
New from this manufacturer.
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