V = V
kA²s
kA²s
Ratings
I
V
I
A
V
T
1.12
R
0.065 K/W
600
V
V
2T = 25°C
VJ
T = °C
VJ
mA40V = V
T = 25°C
VJ
I = A
T
V
T = °C
C
85
P
tot
1770 WT = 25°C
C
600
1800
forward voltage drop
total power dissipation
1.34
T = 25°C
VJ
125
V
T0
V0.81T = °C
VJ
140
r
T
0.4
mΩ
V1.06T = °C
VJ
I = A
T
V
600
1.33
I = A1200
I = A1200
threshold voltage
slope resistance
for power loss calculation only
mA
125
V
V1800T = 25°C
VJ
I
A940
P
GM
Wt = 30 µs 120
max. gate power dissipation
P
T = °C
C
140
Wt = 60
P
P
GAV
W20
average gate power dissipation
C
J
620
junction capacitance
V = V400 T = 25°Cf = 1 MHz
R
VJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
140
I²t
T = 45°C
value for fusing
T = °C140
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
140
15.0
16.2
812.8
788.8
kA
kA
kA
kA
12.8
13.8
1.13
1.09
1800
300 µs
RMS forward current
T(RMS)
TAV
180° sine
average forward current
(di/dt)
cr
A/µs
100repetitive, I =T
VJ
= 140 °C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage
V = 6 V T = °C25
(dv/dt)
T = 140°C
critical rate of rise of voltage
A/µs500
V/µs
t = µs;
I A; V = ⅔ V
R =
∞; method 1 (linear voltage rise)
VJ
D
VJ
1800 A
T
P
G
= 1
di /dt A/µs;
G
=
1
DRM
cr
V =
⅔ V
DRM
GK
1000
2 V
T = °C-40
VJ
I
GT
gate trigger current
V = 6 V T = °C25
D
VJ
300 mA
T = °C-40
VJ
3 V
400 mA
V
GD
gate non-trigger voltage
T = °C
VJ
0.25 V
I
GD
gate non-trigger current
10 mA
V = ⅔ V
D DRM
140
latching current
T = °C
VJ
400 mA
I
L
25t µs
p
= 30
I A;
G
= 1 di /dt A/µs
G
= 1
holding current
T = °C
VJ
300 mA
I
H
25V = 6 V
D
R = ∞
GK
gate controlled delay time
T = °C
VJ
2 µs
t
gd
25
I A;
G
= 1 di /dt A/µs
G
= 1
V = ½ V
D DRM
turn-off time
T = °C
VJ
350 µs
t
q
di/dt = A/µs10 dv/dt = V/µs50
V =
R
100 V; I A;
T
= 600 V =
⅔ V
DRM
t
µs
p
= 200
non-repet., I = 600 A
T
125
R
thCH
0.020
thermal resistance case to heatsink
K/W
Thyristor
1900
RRM/DRM
RSM/DSM
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
R/D
reverse current, drain current
T
T
R/D
R/D
200
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20170112eData according to IEC 60747and per semiconductor unless otherwise specified
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