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4N25-300E

P1-P3P4-P6P7-P7
4
Absolute Maximum Ratings
Storage Temperature, T
S
–55˚C to +150˚C
Operating Temperature, T
A
–55˚C to +100˚C
Lead Solder Temperature, max.
(1.6 mm below seating plane)
260˚C for 10 s
Average Forward Current, I
F
80 mA
Reverse Input Voltage, V
R
6 V
Input Power Dissipation, P
I
150 mW
Collector Current, I
C
100 mA
Collector-Emitter Voltage, V
CEO
30 V
Emitter-Collector Voltage, V
ECO
7 V
Collector-Base Voltage, V
CBO
70 V
Collector Power Dissipation 150 mW
Total Power Dissipation 250 mW
Isolation Voltage, V
iso
(AC for 1 minute, R.H. = 40 ~ 60%)
2500 Vrms
Solder Reow Temperature Prole
1. One-time soldering reow is recommended with-
in the condition of temperature and time prole
shown at right.
2. When using another soldering method such as in-
frared ray lamp, the temperature may rise partially
in the mold of the device. Keep the temperature on
the package of the device within the condition of (1)
above.
Note: Non-halide ux should be used.
30 seconds
60 ~ 150 sec 90 sec 60 sec
60 sec
25C
150C
200C
250C
260C (Peak Temperature)
217C
Time (sec)
Temperature (C)
* CTR = x 100%
I
C
I
F
Electrical Specications (T
A
= 25˚C)
Parameter Symbol Min. Typ. Max. Units Test Conditions
Forward Voltage V
F
– 1.2 1.5 V I
F
= 10 mA
Reverse Current I
R
– – 10 µA V
R
= 4 V
Terminal Capacitance C
t
– 50 – pF V = 0, f = 1 KHz
Collector Dark Current I
CEO
– – 50 nA V
CE
= 10 V, I
F
= 0
Collector-Emitter Breakdown Voltage BV
CEO
30 – – V I
C
= 0.1 mA, I
F
= 0
Emitter-Collector Breakdown Voltage BV
ECO
7 – – V I
E
= 10 µA, I
F
= 0
Collector-Base Breakdown Voltage BV
CBO
70 – – V I
C
= 0.1 mA, I
F
= 0
Collector Current I
C
2 – – mA I
F
= 10 mA
*Current Transfer Ratio CTR 20 – – % V
CE
= 10 V
Collector-Emitter Saturation Voltage V
CE(sat)
– 0.1 0.5 V I
F
= 50 mA, I
C
= 2 mA
Response Time (Rise) t
r
– 3 – µs V
CE
= 10 V, I
C
= 2 mA
Response Time (Fall) t
f
– 3 – µs R
L
= 100 Ω
Isolation Resistance R
iso
5 x 10
10
1 x 10
11
– Ω DC 500 V 40 ~ 60%
R.H.
Floating Capacitance C
f
– 1 – pF V = 0, f = 1 MHz
5
I
F
– FORWARD CURRENT – mA
0
T
A
– AMBIENT TEMPERATURE – °C
-25 75 125
60
25
20
40
100
0 50 100-55
80
P
C
– COLLECTOR POWER DISSIPATION – mW
0
T
A
– AMBIENT TEMPERATURE – °C
-25 75 125
100
25
50
200
0 50 100-55
150
I
F
– FORWARD CURRENT – mA
1
V
F
– FORWARD VOLTAGE – V
2.0 3.0
10
5
500
1.00
T
A
= 75°C
0.5 1.5 2.5
2
20
50
100
200
T
A
= 50°C
T
A
= 25°C
T
A
= 0°C
T
A
= -25°C
CTR – CURRENT TRANSFER RATIO – %
0
I
F
– FORWARD CURRENT – mA
0.2 5 100
30
1
10
20
50
0.5 2 100.1
40
V
CE
= 10 V
T
A
= 25°C
20 50
500 kΩ 100 kΩ
R
BE
=
I
C
– COLLECTOR CURRENT – mA
0
V
CE
– COLLECTOR-EMITTER VOLTAGE – V
10 15
10
5
15
50
P
C
(MAX.)
T
A
= 25°C I
F
= 40 mA
I
F
= 30 mA
I
F
= 20 mA
I
F
= 10 mA
I
F
= 5 mA
Figure 1. Forward current vs. temperature. Figure 2. Collector power dissipation vs. temperature.
Figure 3. Forward current vs. forward voltage. Figure 4. Current transfer ratio vs. forward current.
Figure 5. Collector current vs. collector-emitter voltage.
6
RELATIVE CURRENT TRANSFER RATIO – %
0
200
100
300
V
CE
= 10 V
I
F
= 10 mA
T
A
– AMBIENT TEMPERATURE – °C
-25 75250 50 100-55
V
CE(SAT.)
– COLLECTOR-EMITTER
SATURATION VOLTAGE – V
0
T
A
– AMBIENT TEMPERATURE – °C
-25 7525
0.1
0.3
0 50 100-55
0.2
I
C
= 2 mA
I
F
= 50 mA
I
CEO
– COLLECTOR DARK CURRENT – A
10
-13
-25 80 125200 40 100-55
T
A
– AMBIENT TEMPERATURE – °C
V
CE
= 10 V
10
-12
10
-11
10
-10
10
-9
10
-8
10
-7
10
-6
5
5
5
5
5
5
5
RESPONSE TIME – µs
0.1
R
L
– LOAD RESISTANCE – kΩ
0.1 5
1
0.5
0.2
0.5
100
0.2 2 100.05
2
20 50
V
CE
= 10 V
I
C
= 2 mA
T
A
= 25°C
ts
td
tf
tr
1
5
10
20
50
VOLTAGE GAIN AV – dB
-20
f – FREQUENCY – kHz
1 20 500
-5
5
-15
-10
5
2 10 500.5
0
100 200
R
L
= 10 kΩ
V
CE
= 5 V
I
C
= 2 mA
T
A
= 25°C
R
L
= 1 kΩ
R
L
= 100 Ω
0
I
F
– FORWARD CURRENT – mA
20 30
2
7
100
5 15 25
1
3
4
5
6
V
CE(SAT.)
– COLLECTOR-EMITTER
SATURATION VOLTAGE – V
T
A
= 25°C
I
C
= 0.5 mA
I
C
= 1 mA
I
C
= 2 mA
I
C
= 3 mA
I
C
= 6 mA
I
C
= 7 mA
Figure 6. Relative current transfer ratio vs. temperature. Figure 7. Collector-emitter saturation voltage vs. temperature.
Figure 8. Collector dark current vs. temperature. Figure 9. Response time vs. load resistance.
Figure 10. Frequency response. Figure 11. Collector-emitter saturation voltage vs. forward current.
P1-P3P4-P6P7-P7

4N25-300E

Mfr. #:
Buy 4N25-300E
Manufacturer:
Broadcom / Avago
Description:
Transistor Output Optocouplers 2500 Vrms 80mA
Lifecycle:
New from this manufacturer.
Delivery:
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