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ADG821BRMZ-REEL7

P1-P3P4-P6P7-P9P10-P12
<1 Ω CMOS, 1.8 V to 5.5 V,
Dual SPST Switches
ADG821/ADG822/ADG823
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
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Tel: 781.329.4700 www.analog.com
Fax: 781.461.3113 ©2002–2008 Analog Devices, Inc. All rights reserved.
FEATURES
0.8 Ω maximum on resistance @ 125°C
0.3 Ω maximum on resistance flatness @ 125°C
1.8 V to 5.5 V single supply
200 mA current carrying capability
Automotive temperature range: −40°C to +125°C
Rail-to-rail operation
8-lead MSOP
33 ns switching times
Typical power consumption: <0.01 μW
TTL-/CMOS-compatible inputs
Pin-compatible with the ADG721/ADG722/ADG723
APPLICATIONS
Power routing
Battery-powered systems
Communication systems
Data acquisition systems
Audio and video signal routing
Cellular phones
Modems
PCMCIA cards
Hard drives
Relay replacement
FUNCTIONAL BLOCK DIAGRAMS
ADG821
SWITCHES SHOWN FOR
A LOGIC 0 INPUT.
IN1
S1
D1
IN2
S2
D2
0
2851-001
ADG822
SWITCHES SHOWN FOR
A LOGIC 0 INPUT.
IN1
S1
D1
IN2
S2
D2
0
2851-002
Figure 1. Figure 2.
ADG823
SWITCHES SHOWN FOR
A LOGIC 0 INPUT.
IN1
S1
D1
IN2
S2
D2
02851-003
Figure 3.
GENERAL DESCRIPTION
The ADG821/ADG822/ADG823 are monolithic CMOS single-
pole, single-throw (SPST) switches. These switches are designed
on an advanced submicron process that provides low power
dissipation, yet gives high switching speed, low on resistance,
and low leakage currents.
The ADG821/ADG822/ADG823 are designed to operate from
a single 1.8 V to 5.5 V supply, making them ideal for use in
battery-powered instruments.
Each switch of the ADG821/ADG822/ADG823 conducts
equally well in both directions when on. The ADG821/
ADG822/ADG823 contain two independent SPST switches.
The ADG821 and ADG822 differ only in that both switches are
normally open and normally closed, respectively. In the ADG823,
Switch 1 is normally open and Switch 2 is normally closed. The
ADG823 exhibits break-before-make switching action.
The ADG821/ADG822/ADG823 are available in an
8-lead MSOP.
PRODUCT HIGHLIGHTS
1. Very Low On Resistance: 0.5 Ω typ.
2. On Resistance Flatness (R
FLAT(ON)
): 0.15 Ω typ.
3. Automotive Temperature Range: −40°C to +125°C.
4. Current Carrying Capability: 200 mA.
5. Low Power Dissipation. CMOS construction ensures low
power dissipation.
6. 8-Lead MSOP.
ADG821/ADG822/ADG823
Rev. A | Page 2 of 12
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagrams ............................................................. 1
General Description ......................................................................... 1
Product Highlights ........................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Absolute Maximum Ratings ............................................................ 5
ESD Caution...................................................................................5
Pin Configuration and Function Descriptions ..............................6
Typical Performance Characteristics ..............................................7
Test Circuits ........................................................................................9
Terminology .................................................................................... 11
Outline Dimensions ....................................................................... 12
Ordering Guide .......................................................................... 12
REVISION HISTORY
4/08—Rev. 0 to Rev. A
Updated Format .................................................................. Universal
Added Table 6 .................................................................................... 6
Updated Outline Dimensions ....................................................... 12
Changes to Ordering Guide .......................................................... 12
8/02—Revision 0: Initial Version
ADG821/ADG822/ADG823
Rev. A | Page 3 of 12
SPECIFICATIONS
V
DD
= 5 V ± 10%, GND = 0 V; T
A
= −40°C to +125°C, unless otherwise noted.
Table 1.
Parameter 25°C
−40°C to
+85°C
−40°C to
+125°C
1
Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
V
On Resistance (R
ON
) 0.5 Ω typ V
S
= 0 V to V
DD
, I
S
= 100 mA, see Figure 17
0.6 0.7 0.8 Ω max
On Resistance Match Between 0.16 Ω typ V
S
= 0 V to V
DD
, I
S
= 100 mA
Channels (∆R
ON
) 0.2 0.25 0.28 Ω max
On Resistance Flatness (R
FLAT(ON)
) 0.15 Ω typ V
S
= 0 V to V
DD
, I
S
= 100 mA
0.23 0.26 0.3 Ω max
LEAKAGE CURRENTS V
DD
= 5.5 V
Source Off Leakage, I
S
(Off) ±0.01 nA typ V
S
= 4.5 V/1 V, V
D
= 1 V/4.5 V, see Figure 18
±0.25 ±3 ±25 nA max
Drain Off Leakage, I
D
(Off) ±0.01 nA typ V
S
= 4.5 V/1 V, V
D
= 1 V/4.5 V, see Figure 18
±0.25 ±3 ±25 nA max
Channel On Leakage, I
D
, I
S
(On) ±0.01 nA typ V
S
= V
D
= 1 V, or V
S
= V
D
= 4.5 V, see Figure 19
±0.25 ±3 ±25 nA max
DIGITAL INPUTS
Input High Voltage, V
INH
2.0 V min
Input Low Voltage, V
INL
0.8 V max
Input Current
I
INL
or I
INH
0.005 µA typ V
IN
= V
INL
or V
INH
±0.1 µA max
Digital Input Capacitance, C
IN
4 pF typ
DYNAMIC CHARACTERISTICS
2
t
ON
33 ns typ R
L
= 50 Ω, C
L
= 35 pF, V
S
= 3 V, see Figure 20
45 48 52 ns max
t
OFF
11 ns typ R
L
= 50 Ω, C
L
= 35 pF, V
S
= 3 V, see Figure 20
16 19 21 ns max
Break-Before-Make Time Delay, t
BBM
32 ns typ R
L
= 50 Ω, C
L
= 35 pF, V
S1
= V
S2
= 3 V,
(ADG823 Only) 1 ns min see Figure 21
Charge Injection 15 pC typ V
S
= 2.5 V; R
S
= 0 Ω, C
L
= 1 nF, see Figure 22
Off Isolation −52 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz, see Figure 23
Channel-to-Channel Crosstalk −82 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz, see Figure 24
Bandwidth −3 dB 24 MHz typ R
L
= 50 Ω, C
L
= 5 pF, see Figure 25
C
S
(Off) 85 pF typ f = 1 MHz
C
D
(Off) 98 pF typ f = 1 MHz
C
D
, C
S
(On) 230 pF typ f = 1 MHz
POWER REQUIREMENTS V
DD
= 5.5 V, digital inputs = 0 V or 5.5 V
I
DD
0.001 µA typ
1.0 2.0 A max
1
On resistance parameters tested with I
S
= 10 mA.
2
Guaranteed by design, not subject to production test.
P1-P3P4-P6P7-P9P10-P12

ADG821BRMZ-REEL7

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Manufacturer:
Analog Devices Inc.
Description:
Analog Switch ICs 500mOhm 5.5V CMOS Dual SPST
Lifecycle:
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