ADG821/ADG822/ADG823
Rev. A | Page 4 of 12
V
DD
= 2.7 V to 3.6 V, GND = 0 V, T
A
= −40°C to +125°C, unless otherwise noted.
Table 2.
Parameter 25°C
−40°C to
+85°C
−40°C to
+125°C
1
Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
V
On Resistance (R
ON
) 0.7 Ω typ V
S
= 0 V to V
DD
, I
S
= 100 mA, see Figure 17
1.4 1.5 1.6 Ω max
On Resistance Match Between 0.16 Ω typ V
S
= 0 V to V
DD
, I
S
= 100 mA
Channels (∆R
ON
) 0.2 0.25 0.28 Ω max
On Resistance Flatness (R
FLAT(ON)
) 0.3 0.33 Ω typ V
S
= 0 V to V
DD
, I
S
= 100 mA
LEAKAGE CURRENTS V
DD
= 3.6 V
Source Off Leakage, I
S
(Off) ±0.01 nA typ V
S
= 3.3 V/1 V, V
D
= 1 V/3.3 V, see Figure 18
±0.25 ±3 ±15 nA max
Drain Off Leakage, I
D
(Off) ±0.01 nA typ V
S
= 3.3 V/1 V, V
D
= 1 V/3.3 V, see Figure 18
±0.25 ±3 ±25 nA max
Channel On Leakage, I
D
, I
S
(On) ±0.01 nA typ V
S
= V
D
= 1 V, or 3.3 V, see Figure 19
±0.25 ±3 ±25 nA max
DIGITAL INPUTS
Input High Voltage, V
INH
2.0 V min
Input Low Voltage, V
INL
0.8 V max
Input Current
I
INL
or I
INH
0.005 A typ V
IN
= V
INL
or V
INH
±0.1 A max
Digital Input Capacitance, C
IN
4 pF typ
DYNAMIC CHARACTERISTICS
2
t
ON
48 ns typ R
L
= 50 Ω, C
L
= 35 pF, V
S
= 1.5 V, see Figure 20
67 74 78 ns max
t
OFF
12 ns typ R
L
= 50 Ω, C
L
= 35 pF, V
S
= 1.5 V, see Figure 20
18 20 23 ns max
Break-Before-Make Time Delay, t
BBM
40 ns typ R
L
= 50 Ω, C
L
= 35 pF, V
S1
= V
S2
= 1.5 V,
(ADG823 Only) 1 ns min see Figure 21
Charge Injection ±2 pC typ V
S
= 1.5 V; R
S
= 0 Ω, C
L
= 1 nF, see Figure 22
Off Isolation −52 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz, see Figure 23
Channel-to-Channel Crosstalk −82 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz, see Figure 24
Bandwidth −3 dB 24 MHz typ R
L
= 50 Ω, C
L
= 5 pF, see Figure 25
C
S
(Off) 85 pF typ f = 1 MHz
C
D
(Off) 98 pF typ f = 1 MHz
C
D
, C
S
(On) 230 pF typ f = 1 MHz
POWER REQUIREMENTS V
DD
= 3.6 V, digital inputs = 0 V or 3.6 V
I
DD
0.001 A typ
1.0 2.0 A max
1
On resistance parameters tested with I
S
= 10 mA.
2
Guaranteed by design, not subject to production test.
