TSM2N7002KCX RFG Datasheet TSM2N7002KCX RFG | P1-P3

TSM2N7002K

Taiwan Semiconductor

Document Number: DS_P0000068 1 Version: G1610

N-Channel Power MOSFET

60V, 300mA, 2Ω

FEATURES

● Low On-Resistance

● ESD Protected 2KV

● High Speed Switching

● Low Voltage Drive

KEY PERFORMANCE PARAMETERS

PARAMETER

VALUE

UNIT

V

DS

60

V

R

DS(on)

(max)

V

GS

= 10V

2

Ω

V

GS

= 4.5V

4

Q

g

0.4

nC

APPLICATION

● Logic Level translators

● DC-DC Converter

SOT-23

Notes: Moisture sensitivity level: level 3. Per J-STD-020

ABSOLUTE MAXIMUM RATINGS (T

A

= 25°C unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

V

DS

60

V

Gate-Source Voltage

V

GS

±20

V

Continuous Drain Current

(Note 1)

T

A

= 25°C

I

D

300

mA

T

A

= 100°C

180

Pulsed Drain Current

(Note 2)

I

DM

800

mA

Total Power Dissipation @ T

A

= 25°C

P

DTOT

300

mW

Single Pulsed Avalanche Energy

(Note 3)

E

AS

0.2

mJ

Single Pulsed Avalanche Current

(Note 3)

I

AS

2

A

Operating Junction and Storage Temperature Range

T

J

, T

STG

- 55 to +150

°C

THERMAL PERFORMANCE

PARAMETER

SYMBOL

LIMIT

UNIT

Junction to Ambient Thermal Resistance

R

ӨJA

350

°C/W

Notes: R

ӨJA

is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined

at the solder mounting surface of the drain pins. R

ӨJA

is guaranteed by design while R

ӨCA

is determined by the user’s board

design. R

ӨJA

shown below for single device operation on FR-4 PCB in still air

TSM2N7002K

Taiwan Semiconductor

Document Number: DS_P0000068 2 Version: G1610

ELECTRICAL SPECIFICATIONS (T

A

= 25°C unless otherwise noted)

PARAMETER

CONDITIONS

SYMBOL

MIN

TYP

MAX

UNIT

Static

(Note 4)

Drain-Source Breakdown Voltage

V

GS

= 0V, I

D

= 10µA

BV

DSS

60

--

V

Gate Threshold Voltage

V

DS

= V

GS

, I

D

= 250µA

V

GS(TH)

1.0

1.5

2.5

V

Gate Body Leakage

V

GS

=±20V, V

DS

=0V

I

GSS

--

±10

µA

Zero Gate Voltage Drain Current

V

DS

=60V, V

GS

=0V

I

DSS

--

1.0

µA

Drain-Source On-State Resistance

V

GS

=10V, I

D

=300mA

R

DS(ON)

--

1.2

2

Ω

V

GS

=4.5V, I

D

=200mA

--

2

4

Forward Transconductance

V

DS

=10V, I

D

=200mA

g

fs

100

--

mS

Diode Forward Voltage

I

S

=300mA, V

GS

=0V

V

SD

--

0.8

1.4

V

Dynamic

(Note 5)

Total Gate Charge

V

DS

=10V, I

D

= 250mA,

V

GS

=4.5V

Q

g

--

0.4

0.6

nC

Input Capacitance

V

DS

= 25V, V

GS

= 0V,

f = 1.0MHz

C

iss

--

30

--

pF

Output Capacitance

C

oss

--

6

--

Reverse Transfer Capacitance

C

rss

--

2.5

--

Gate Resistance

F = 1MHz, open drain

R

g

--

70

--

Ω

Switching

(Note 6)

Turn-On Delay Time

V

DD

=30V, R

G

=10Ω

I

D

=200mA, V

GEN

=10V,

t

d(on)

--

25

--

ns

Turn-Off Delay Time

t

d(off)

--

35

--

Source-Drain Diode

(Note 4)

Diode Forward Voltage

I

S

=300mA, V

GS

=0V

V

SD

--

0.8

1.4

Reverse Recovery Time

I

S

= 0.5A

dI

F

/dt = 100A/μs

t

rr

--

40

--

ns

Reverse Recovery Charge

Q

rr

--

39

--

nC

Notes:

1. Current limited by package

2. Pulse width limited by the maximum junction temperature

3. L = 0.1mH, I

AS

= 2A, V

DD

= 25V, R

G

= 25Ω, Starting T

J

= 25

o

C

4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%

5. For DESIGN AID ONLY, not subject to production testing.

6. Switching time is essentially independent of operating temperature.

TSM2N7002K

Taiwan Semiconductor

Document Number: DS_P0000068 3 Version: G1610

ORDERING INFORMATION

PART NO.

PACKAGE

PACKING

TSM2N7002KCX RFG

SOT-23

3,000pcs / 7” Reel

Note:

1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC

2. Halogen-free according to IEC 61249-2-21 definition

TSM2N7002KCX RFG

TSM2N7002KCX RFG

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