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SPD30P06P

P1-P3P4-P6P7-P8
2002-07-31
Page 4
SPD30P06P
SPU30P06P
Final data
1 Power dissipation
P
tot
= f (T
C
)
0 20 40 60 80 100 120 140 160
°C
190
T
C
0
10
20
30
40
50
60
70
80
90
100
110
120
W
140
SPD30P06P
P
tot
2 Drain current
I
D
= f (T
C
)
parameter: |V
GS
|≥ 10 V
0 20 40 60 80 100 120 140 160
°C
190
T
C
0
-4
-8
-12
-16
-20
-24
A
-32
SPD30P06P
I
D
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 , T
C
= 25 °C
-10
-1
-10
0
-10
1
-10
2
V
V
DS
0
-10
1
-10
2
-10
3
-10
A
SPD30P06P
I
D
R
D
S
(
o
n
)
=
V
D
S
/
I
D
DC
10 ms
1 ms
100 µs
t
p
= 31.0µs
4 Max. transient thermal impedance
Z
thJC
= f (t
p
)
parameter : D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
SPD30P06P
Z
thJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2002-07-31
Page 5
SPD30P06P
SPU30P06P
Final data
5 Typ. output characteristic
I
D
= f (V
DS
)
parameter: T
j
=25°C
0 5 10 15 20 25 30 35
V
45
-V
DS
0
10
20
30
40
50
60
70
A
90
-I
D
-9V
-5V
-6V
-7V
-10V
-4.5V
-4V
6 Typ. drain-source on resistance
R
DS(on)
= f (I
D
)
parameter: V
GS
; T
j
= 25 °C
0 10 20 30 40 50 60 70
A
90
-I
D
0
0.1
0.2
0.3
0.4
0.5
Ω
0.7
R
DS(on)
-4V
-4.5V
-5V
-6V
-7V
-9V
-10V
7 Typ. transfer characteristics
I
D
= f ( V
GS
); |V
DS
|
≥ 2 x |I
D
|
x R
DS(on)max
parameter: T
j
= 25 °C
0 1 2 3 4 5 6 7 8
V
10
-V
GS
0
10
20
30
40
50
60
70
A
90
-I
D
8 Typ. forward transconductance
g
fs
= f(I
D
)
parameter: T
j
= 25 °C
0 10 20 30 40 50 60 70
A
90
-I
D
0
2
4
6
8
10
12
14
S
18
g
fs
2002-07-31
Page 6
SPD30P06P
SPU30P06P
Final data
9 Drain-source on-state resistance
R
DS(on)
= f (T
j
)
parameter : I
D
= -21.5 A, V
GS
= -10 V
-60 -20 20 60 100 140
°C
200
T
j
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
Ω
0.24
SPD30P06P
R
DS(on)
typ
98%
10 Typ. gate threshold voltage
V
GS(th)
= f (T
j
)
parameter: V
GS
= V
DS
-60 -20 20 60 100
°C
160
T
j
0
0.5
1
1.5
2
2.5
3
3.5
4
V
5
-V
GS(th)
98%
2%
typ.
11 Typ. capacitances
C = f (V
DS
)
parameter: V
GS
=0, f=1 MHz; T
j
= 25 °C
0 2 4 6 8 10 12 14 16
V
20
-V
DS
1
10
2
10
3
10
4
10
pF
C
C
oss
C
iss
C
rss
12 Forward character. of reverse diode
I
F
= f (V
SD
)
parameter: T
j
, tp = 80 µs
0 -0.4 -0.8 -1.2 -1.6 -2 -2.4
V
-3
V
SD
0
-10
1
-10
2
-10
3
-10
A
SPD30P06P
I
F
T
j
= 25 °C typ
T
j
= 25 °C (98%)
T
j
= 175 °C typ
T
j
= 175 °C (98%)
P1-P3P4-P6P7-P8

SPD30P06P

Mfr. #:
Buy SPD30P06P
Manufacturer:
Infineon Technologies
Description:
MOSFET P-Ch -60V -30A DPAK-2
Lifecycle:
New from this manufacturer.
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