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SPU30P06P

P1-P3P4-P6P7-P8
2002-07-31
Page 1
SPD30P06P
SPU30P06P
Final data
SIPMOS
Power-Transistor
Product Summary
V
DS
-60 V
R
DS
(
on
)
0.075 Ω
I
D
-30 A
Feature
• P-Channel
• Enhancement mode
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
P-TO251 P-TO252
Gate
pin1
Drain
pin 2
Source
pin 3
Type Package Ordering Code
SPD30P06P P-TO252 Q67042-S4018
SPU30P06P P-TO251 Q67042-S4019
Maximum Ratings, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
T
C
=25°C
T
C
=100°C
I
D
-30
-21.5
A
Pulsed drain current
T
C
=25°C
I
D puls
-120
Avalanche energy, single pulse
I
D
=-30 A , V
DD
=-25V, R
GS
=25Ω
E
AS
250 mJ
Avalanche energy, periodic limited by T
j
max
E
A
R
12.5
Reverse diode dv/dt
I
S
=-30A, V
DS
=-48V, di/dt=-200A/µs, T
jmax
=175°C
dv/dt
-6 kV/µs
Gate source voltage V
GS
±20
V
Power dissipation
T
C
=25°C
P
tot
125 W
Operating and storage temperature T
j
,
T
st
g
-55... +175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
2002-07-31
Page 2
SPD30P06P
SPU30P06P
Final data
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case R
thJC
- - 1.2 K/W
Thermal resistance, junction - ambient, leaded R
thJ
A
- - 100
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJA
-
-
-
-
75
50
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0, I
D
=-250µA
V
(BR)DSS
-60 - - V
Gate threshold voltage, V
GS
= V
DS
I
D
=-1.7mA
V
GS(th)
-2.1 -3 -4
Zero gate voltage drain current
V
DS
=-60V, V
GS
=0, T
j
=25°C
V
DS
=-60V, V
GS
=0, T
j
=150°C
I
DSS
-
-
-0.1
-10
-1
-100
µA
Gate-source leakage current
V
GS
=-20V, V
DS
=0
I
GSS
- -10 -100 nA
Drain-source on-state resistance
V
GS
=-10V, I
D
=-21.5A
R
DS(on)
- 0.066 0.075
Ω
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2002-07-31
Page 3
SPD30P06P
SPU30P06P
Final data
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance g
fs
|V
DS
|≥2*|I
D
|*R
DS(on)max
,
I
D
=-21.5A
5.2 10.4 - S
Input capacitance C
iss
V
GS
=0, V
DS
=-25V,
f=1MHz
- 1228 1535 pF
Output capacitance C
oss
- 387 484
Reverse transfer capacitance C
rss
- 142 177
Turn-on delay time t
d
on
V
DD
=-30V, V
GS
=-10V,
I
D
=-21.5A, R
G
=3.3Ω
- 8.7 13 ns
Rise time t
r
- 25.2 37.8
Turn-off delay time t
d
(
off
)
- 27.4 41.1
Fall time t
f
- 14.6 21.9
Gate Charge Characteristics
Gate to source charge Q
g
s
V
DD
=-48V, I
D
=-30A - -3.7 -5.6 nC
Gate to drain charge Q
g
d
- -13.8 -20.7
Gate charge total Q
g
V
DD
=-48V, I
D
=-30A,
V
GS
=0 to -10V
- -32 -48
Gate plateau voltage V
(p
lateau
)
V
DD
=-48V, I
D
=-30A - -5.2 - V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
C
=25°C - - -30 A
Inv. diode direct current, pulse
d
I
SM
- - -120
Inverse diode forward voltage V
SD
V
GS
=0, |I
F
| = |I
S
| - -1.3 -1.7 V
Reverse recovery time t
rr
V
R
=-30V, |I
F
| = |I
S
|,
di
F
/dt=100A/µs
- 64.6 97 ns
Reverse recovery charge Q
rr
- 153 230 nC
P1-P3P4-P6P7-P8

SPU30P06P

Mfr. #:
Buy SPU30P06P
Manufacturer:
Infineon Technologies
Description:
MOSFET P-Ch -60V -30A IPAK-3
Lifecycle:
New from this manufacturer.
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