OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

VS-1EFH01HM3/I

P1-P3P4-P6
VS-1EFH01HM3
www.vishay.com
Vishay Semiconductors
Revision: 28-Jun-16
1
Document Number: 95784
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Hyperfast Rectifier, 1 A FRED Pt
®
FEATURES
• Hyperfast recovery time, reduced Q
rr
, and soft
recovery
• 175 °C maximum operating junction temperature
• Specified for output and snubber operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• AEC-Q101 qualified, meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyperfast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
These devices are intended for use in snubber, boost,
lighting, piezo-injection, as high frequency rectifiers, and
freewheeling diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
Note
(1)
Device on PCB with 8 mm x 16 mm soldering lands
PRODUCT SUMMARY
I
F(AV)
1 A
V
R
100 V
V
F
at I
F
(typ. 125 °C) 0.74 V
t
rr
25 ns
T
J
max. 175 °C
Package DO-219AB (SMF)
Diode variation Single die
Cathode Anode
DO-219AB (SMF)
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage V
RRM
100 V
Average rectified forward current I
F(AV)
T
C
= 160 °C
(1)
1
A
Non-repetitive peak surge current I
FSM
T
J
= 25 °C 35
Operating junction and storage temperature range T
J
, T
Stg
-65 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
, V
R
I
R
= 100 μA 100 - -
V
Forward voltage V
F
I
F
= 1 A - 0.87 0.93
I
F
= 1 A, T
J
= 125 °C - 0.74 0.8
Reverse leakage current I
R
V
R
= V
R
rated - - 2
μA
T
J
= 125 °C, V
R
= V
R
rated - 0.5 8
Junction capacitance C
T
V
R
= 100 V - 5 - pF
VS-1EFH01HM3
www.vishay.com
Vishay Semiconductors
Revision: 28-Jun-16
2
Document Number: 95784
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1 A, dI
F
/dt = 50 A/μs, V
R
= 30 V - 24 -
ns
I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A - - 25
T
J
= 25 °C
I
F
= 1 A
dI
F
/dt = 200 A/μs
V
R
= 160 V
-16-
T
J
= 125 °C - 23 -
Peak recovery current I
RRM
T
J
= 25 °C - 1.6 -
A
T
J
= 125 °C - 2.5 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 13 -
nC
T
J
= 125 °C - 30 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-65 - +175 °C
Thermal resistance, junction to case R
thJC
Device mounted on PCB with 8 mm x 16 mm
soldering lands
--17°C/W
Thermal resistance, junction to ambient R
thJA
Device mounted on PCB with 2 mm x 3.5 mm
soldering lands
- - 140 °C/W
Approximate weight
0.015 g
0.0005 oz.
Marking device Case style SMF (DO-219AB) MAH
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
I
F
- Instantaneous Forward Current (A)
V
F
- Forward Voltage Drop (V)
T
J
= 125 °C
T
J
= 25 °C
T
J
= 175 °C
T
J
= 150 °C
V
R
-
Reverse Voltage (V)
I
R
- Reverse Current (μA)
0.001
0.01
0.1
1
10
100
50 60 70 80 90 100
25 °C
125 °C
150 °C
175 °C
VS-1EFH01HM3
www.vishay.com
Vishay Semiconductors
Revision: 28-Jun-16
3
Document Number: 95784
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Allowable Case Temperature
vs. Average Forward Current
Fig. 5 - Forward Power Loss Characteristics
Fig. 6 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 7 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 5);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
1
10
100
0 20406080100
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
150
155
160
165
170
175
180
0 0.2 0.4 0.6 0.8 1 1.2
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
Square wave (D = 0.50)
80 % rated V
R
applied
See note
(1)
DC
I
F(AV)
- Average Forward Current (A)
Average Power Loss (W)
0
0.3
0.6
0.9
1.2
0 0.3 0.6 0.9 1.2 1.5
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
RMS limit
5
10
15
20
25
30
35
100 1000
t
rr
(ns)
dI
F
/dt (A/μs)
125 °C
25 °C
10
15
20
25
30
35
40
100 1000
Q
rr
(nC)
dI
F
/dt (A/μs)
125 °C
25 °C
P1-P3P4-P6

VS-1EFH01HM3/I

Mfr. #:
Buy VS-1EFH01HM3/I
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 1A 100V Hyprfst Rcfr AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet