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SST25VF080B-80-4C-QAE-T

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P36P37-P37
©2011 Silicon Storage Technology, Inc. DS25045A 09/11
22
8 Mbit SPI Serial Flash
SST25VF080B
Data Sheet
A
Microchip Technology Company
Read-ID (RDID)
The Read-ID instruction (RDID) identifies the devices as SST25VF080B and manufacturer as SST.
This command is backward compatible and should be used as default device identification when multi-
ple versions of SPI Serial Flash devices are used in a design. The device information can be read from
executing an 8-bit command, 90H or ABH, followed by address bits [A
23
-A
0
]. Following the Read-ID
instruction, the manufacturer’s ID is located in address 00000H and the device ID is located in address
00001H. Once the device is in Read-ID mode, the manufacturer’s and device ID output data toggles
between address 00000H and 00001H until terminated by a low to high transition on CE#.
Refer to Tables 6 and 7 for device identification data.
Figure 21:Read-ID Sequence
Table 7: Product Identification
Address Data
Manufacturer’s ID 00000H BFH
Device ID
SST25VF080B 00001H 8EH
T7.0 25045
1265 RdID.0
CE#
SO
SI
SCK
00
012345678
00 ADD
1
90 or AB
HIGH IMPEDANCE
15 16
23
24
31
32
39
40
47 48 55 56 63
BF
Device ID
BF
Device ID
HIGH
IMPEDANCE
MODE 3
MODE 0
MSB MSB
MSB
Note: The manufacturer’s and device ID output stream is continuous until terminated by a low-to-high transition on
CE#.
Device ID = 8EH for SST25VF080B
1 00H will output the manufacture’s ID first and 01H will output device ID first before toggling between the two.
©2011 Silicon Storage Technology, Inc. DS25045A 09/11
23
8 Mbit SPI Serial Flash
SST25VF080B
Data Sheet
A
Microchip Technology Company
Electrical Specifications
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con-
ditions may affect device reliability.)
Temperature Under Bias .............................................. -55°C to +125°C
Storage Temperature................................................. -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential .............................-0.5V to V
DD
+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential ..................-2.0V to V
DD
+2.0V
Package Power Dissipation Capability (T
A
= 25°C)................................... 1.0W
Surface Mount Solder Reflow Temperature ...........................260°C for 10 seconds
Output Short Circuit Current
1
................................................... 50mA
1. Output shorted for no more than one second. No more than one output shorted at a time.
Table 8: Operating Range
Range Ambient Temp V
DD
Commercial 0°C to +70°C 2.7-3.6V
Industrial -40°C to +85°C 2.7-3.6V
T8.1 25045
Table 9: AC Conditions of Test
1
1. See Figures 26 and 27
Input Rise/Fall Time Output Load
5ns C
L
=30pF
T9.1 25045
Table 10:DC Operating Characteristics (SST25VF080B-50-xx-xxxx)
Symbol Parameter
Limits
Test ConditionsMin Max Units
I
DDR
Read Current 10 mA CE#=0.1 V
DD
/0.9 V
DD
@25 MHz, SO=open
I
DDR2
Read Current 15 mA CE#=0.1 V
DD
/0.9 V
DD
@50 MHz, SO=open
I
DDW
Program and Erase Current 30 mA CE#=V
DD
I
SB
Standby Current 20 µA CE#=V
DD
,V
IN
=V
DD
or V
SS
I
LI
Input Leakage Current 1 µA V
IN
=GND to V
DD
,V
DD
=V
DD
Max
I
LO
Output Leakage Current 1 µA V
OUT
=GND to V
DD
,V
DD
=V
DD
Max
V
IL
Input Low Voltage 0.8 V V
DD
=V
DD
Min
V
IH
Input High Voltage 0.7 V
DD
VV
DD
=V
DD
Max
V
OL
Output Low Voltage 0.2 V I
OL
=100 µA, V
DD
=V
DD
Min
V
OL2
Output Low Voltage 0.4 V I
OL
=1.6 mA, V
DD
=V
DD
Min
V
OH
Output High Voltage V
DD
-0.2 V I
OH
=-100 µA, V
DD
=V
DD
Min
T10.0 25045
©2011 Silicon Storage Technology, Inc. DS25045A 09/11
24
8 Mbit SPI Serial Flash
SST25VF080B
Data Sheet
A
Microchip Technology Company
Table 11:DC Operating Characteristics (SST25VF080B-80-xx-xxxx)
Symbol Parameter
Limits
Test ConditionsMin Max Units
I
DDR
Read Current 12 mA CE#=0.1 V
DD
/0.9 V
DD
@33 MHz, SO=open
I
DDR3
Read Current 20 mA CE#=0.1 V
DD
/0.9 V
DD
@80 MHz, SO=open
I
DDW
Program and Erase Current 30 mA CE#=V
DD
I
SB
Standby Current 20 µA CE#=V
DD
,V
IN
=V
DD
or V
SS
I
LI
Input Leakage Current 1 µA V
IN
=GND to V
DD
,V
DD
=V
DD
Max
I
LO
Output Leakage Current 1 µA V
OUT
=GND to V
DD
,V
DD
=V
DD
Max
V
IL
Input Low Voltage 0.8 V V
DD
=V
DD
Min
V
IH
Input High Voltage 0.7 V
DD
VV
DD
=V
DD
Max
V
OL
Output Low Voltage 0.2 V I
OL
=100 µA, V
DD
=V
DD
Min
V
OL2
Output Low Voltage 0.4 V I
OL
=1.6 mA, V
DD
=V
DD
Min
V
OH
Output High Voltage V
DD
-0.2 V I
OH
=-100 µA, V
DD
=V
DD
Min
T11.0 25045
Table 12:Capacitance (T
A
= 25°C, f=1 Mhz, other pins open)
Parameter Description Test Condition Maximum
C
OUT
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Output Pin Capacitance V
OUT
=0V 12pF
C
IN
1
Input Capacitance V
IN
=0V 6pF
T12.0 25045
Table 13:Reliability Characteristics
Symbol Parameter Minimum Specification Units Test Method
N
END
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Endurance 10,000 Cycles JEDEC Standard A117
T
DR
1
Data Retention 100 Years JEDEC Standard A103
I
LTH
1
Latch Up 100 + I
DD
mA JEDEC Standard 78
T13.0 25045
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P36P37-P37

SST25VF080B-80-4C-QAE-T

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Buy SST25VF080B-80-4C-QAE-T
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Flash 2.7V to 3.6V 8Mbit SPI Serial Flash
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