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SST25VF080B-80-4I-SAE-T

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P36P37-P37
©2011 Silicon Storage Technology, Inc. DS25045A 09/11
28
8 Mbit SPI Serial Flash
SST25VF080B
Data Sheet
A
Microchip Technology Company
Power-Up Specifications
All functionalities and DC specifications are specified for a V
DD
ramp rate of greater than 1V per 100
ms (0v - 3.0V in less than 300 ms). See Table 16 and Figure 25 for more information.
Figure 25:Power-up Timing Diagram
Table 16:Recommended System Power-up Timings
Symbol Parameter Minimum Units
T
PU-READ
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
V
DD
Min to Read Operation 100 µs
T
PU-WRITE
1
V
DD
Min to Write Operation 100 µs
T16.0 25045
Time
V
DD
Min
V
DD
Max
V
DD
Device fully accessible
T
PU-READ
T
PU-WRITE
Chip selection is not allowed.
Commands may not be accepted or properly
interpreted by the device.
1296 PwrUp.0
©2011 Silicon Storage Technology, Inc. DS25045A 09/11
29
8 Mbit SPI Serial Flash
SST25VF080B
Data Sheet
A
Microchip Technology Company
Figure 26:AC Input/Output Reference Waveforms
Figure 27:A Test Load Example
1296 IORef.0
REFERENCE POINTS OUTPUTINPUT
V
HT
V
LT
V
HT
V
LT
V
IHT
V
ILT
AC test inputs are driven at V
IHT
(0.9V
DD
) for a logic “1” and V
ILT
(0.1V
DD
) for a logic “0”. Measure-
ment reference points for inputs and outputs are V
HT
(0.6V
DD
) and V
LT
(0.4V
DD
). Input rise and fall
times (10% 90%) are <5 ns.
Note: V
HT
-V
HIGH
Test
V
LT
-V
LOW
Test
V
IHT
-V
INPUT
HIGH
Test
1296 TstLd.0
TO TESTER
TO DUT
C
L
©2011 Silicon Storage Technology, Inc. DS25045A 09/11
30
8 Mbit SPI Serial Flash
SST25VF080B
Data Sheet
A
Microchip Technology Company
Product Ordering Information
SST 25 VF 080B - 80 - 4C - S2AE
XX XX XXXX - XX - XX
-
XXXX
Environmental Attribute
E
1
= non-Pb / non-Sn contact (lead) finish
F
2
= non-Pb / non-Sn contact (lead) finish:
Nickel plating with Gold top (outer) layer
Package Modifier
A = 8 leads or contacts
Package Type
S = SOIC 150 mil body width
S2 = SOIC 200 mil body width
Q = WSON
P= PDIP 300 mil body width
Temperature Range
C = Commercial = 0°C to +70°C
I = Industrial = -40°C to +85°C
Minimum Endurance
4 = 10,000 cycles
Operating Frequency
50 = 50 MHz
80 = 80 MHz
Device Density
080 = 8 Mbit
Voltage
V = 2.7-3.6V
Product Series
25 = Serial Peripheral Interface flash
memory
1. Environmental suffix “E” denotes non-Pb solder.
SST non-Pb solder devices are “RoHS Compliant”.
2. Environmental suffix “F” denotes non-Pb/non-SN
solder. SST non-Pb/non-Sn solder devices are
“RoHS Compliant”.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P36P37-P37

SST25VF080B-80-4I-SAE-T

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Buy SST25VF080B-80-4I-SAE-T
Manufacturer:
Description:
Flash 2.7V to 3.6V 8Mbit SPI Serial Flash
Lifecycle:
New from this manufacturer.
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