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MRF19030LSR3

P1-P3P4-P6P7-P8
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ARCHIVE INFORMATION
MRF19030LR3 MRF19030LSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement - Mode Lateral MOSFETs
Designed for class AB PCN and PCS base station applications with
frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and
multicarrier amplifier applications.
• CDMA Performance @ 1990 MHz, 26 Volts
IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13
885 kHz — -47 dBc in 30 kHz BW
1.25 MHz — -55 dBc in 12.5 kHz BW
2.25 MHz — -55 dBc in 1 MHz BW
Output Power — 4.5 Watts Avg.
Power Gain — 13.5 dB
Efficiency — 17%
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 30 Watts CW
Output Power
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage V
DSS
-0.5, +65 Vdc
Gate-Source Voltage V
GS
-0.5, +15 Vdc
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
83.3
0.48
W
W/°C
Storage Temperature Range T
stg
- 65 to +150 °C
Case Operating Temperature T
C
150 °C
Operating Junction Temperature T
J
200 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Case R
θ
JC
2.1 °C/W
Table 3. ESD Protection Characteristics
Test Conditions Class
Human Body Model 2 (Minimum)
Machine Model M3 (Minimum)
Document Number: MRF19030
Rev. 12, 5/2006
Freescale Semiconductor
Technical Data
MRF19030LR3
MRF19030LSR3
1930 - 1990 MHz, 30 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465E- 04, STYLE 1
NI- 400
MRF19030LR3
CASE 465F- 04, STYLE 1
NI- 400S
MRF19030LSR3
Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
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2
RF Device Data
Freescale Semiconductor
MRF19030LR3 MRF19030LSR3
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Drain- Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 20 µA)
V
(BR)DSS
65 — — Vdc
Zero Gate Voltage Drain Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
— — 1 µAdc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
— — 1 µAdc
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 100 µAdc)
V
GS(th)
2 3 4 Vdc
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 300 mA)
V
GS(Q)
2 3.3 4.5 Vdc
Drain- Source On- Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
V
DS(on)
— 0.29 0.4 Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 1 Adc)
g
fs
— 2 — S
Dynamic Characteristics
Input Capacitance (Including Input Matching Capacitor in Package)
(1)
(V
DS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
C
iss
— 98.5 — pF
Output Capacitance
(1)
(V
DS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
C
oss
— 37 — pF
Reverse Transfer Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
C
rss
— 1.3 — pF
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Two- Tone Common -Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 300 mA,
f1 = 1960.0 MHz, f2 = 1960.1 MHz)
G
ps
— 13 — dB
Two- Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 300 mA,
f1 = 1960.0 MHz, f2 = 1960.1 MHz)
η — 36 — %
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 300 mA,
f1 = 1960.0 MHz, f2 = 1960.1 MHz)
IMD — -31 — dBc
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 300 mA,
f1 = 1960.0 MHz, f2 = 1960.1 MHz)
IRL — -13 — dB
Two- Tone Common -Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 300 mA, f1 = 1930.0 MHz,
f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz)
G
ps
12 13 — dB
Two- Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 300 mA, f1 = 1930.0 MHz,
f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz)
η 33 36 — %
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 300 mA, f1 = 1930.0 MHz,
f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz)
IMD — -31 -28 dBc
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 300 mA, f1 = 1930.0 MHz,
f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz)
IRL — -13 -9 dB
1. Part is internally matched both on input and output.
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MRF19030LR3 MRF19030LSR3
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF19030LR3(SR3) Test Circuit Schematic
B1 - B5 Short Ferrite Beads
C1, C7 10 pF Chip Capacitors
C2, C8 470 µF, 35 V Electrolytic Capacitors
C3, C5 0.1 µF Chip Capacitors
C4, C6 5.1 pF Chip Capacitors
C9 22 µF Tantalum Chip Capacitor
C10 0.4 - 2.5 pF Variable Capacitor, Johanson Gigatrim
L1 - L4 12.5 nH Inductors
R1 - R7 12 Ω Chip Resistors (0805)
Z1 0.080″ x 0.595″ Microstrip
Z2 0.080″ x 0.600″ Microstrip
Z3 0.080″ x 0.480″ Microstrip
Z4 0.325″ x 0.280″ Microstrip
Z5 0.510″ x 0.200″ Microstrip
Z6 0.510″ x 0.200″ Microstrip
Z7 0.325″ x 0.280″ Microstrip
Z8 0.080″ x 0.480″ Microstrip
Z9 0.080″ x 0.530″ Microstrip
Z10 0.080″ x 0.671″ Microstrip
Substrate 0.030″ x 3.00″ x 5.00″ Glass Teflon
,
Arlon
RF
INPUT
RF
OUTPUT
Z1 Z2
V
BIAS
C1
C7
C2
+
L2
DUT
V
SUPPLY
C6
Z9 Z10
L1
Z3
C8
+
C5
Z7 Z8
Z6
C3
B1
R1
B2
R2
C4
Z4
Z5
C9
L3
B3
R5
B4
R6
B5
R7
L4
+
R3
R4
C10
P1-P3P4-P6P7-P8

MRF19030LSR3

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Buy MRF19030LSR3
Manufacturer:
NXP Semiconductors
Description:
FET RF 65V 1.96GHZ NI-400S
Lifecycle:
New from this manufacturer.
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