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K684Z20Y5VF5UH5
P1-P3
P4-P6
P7-P9
P10-P11
IRFR/U3412PbF
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0.0
0.5
1.
0
1.5
2.0
2.5
3.0
V
SD
, S
ource-t
oDr
ain V
olt
age (V
)
0.1
1.0
10.0
100.0
1000.0
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°
C
T
J
= 175°
C
V
GS
= 0V
1
10
100
1000
V
DS
, D
rai
n-toS
ource V
olt
age (V
)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc =
25°
C
Tj
=
175°C
Si
ngle P
uls
e
1msec
10msec
OPERATION IN THIS AREA
LIM
ITED BY R
DS
(on)
100µsec
1
10
100
V
DS
, D
rai
n-to-
Sour
ce Vol
tage (V
)
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
=
C
gs
+ C
gd
, C
ds
SHOR
TED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0
2
04
0
6
08
0
1
0
0
Q
G
T
ot
al
G
at
e C
har
ge (
nC)
0
4
8
12
16
20
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 80V
VDS
= 50V
VDS
= 20V
I
D
= 29A
IRFR/U3412PbF
www.irf.com
5
Fig 10a.
Switching Time Test Circuit
V
DS
9
0%
1
0%
V
GS
t
d(on)
t
r
t
d(
off)
t
f
Fig 10b.
Switching Time Waveforms
V
DS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1
%
R
D
V
GS
R
G
D.U.T.
V
GS
+
-
V
DD
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9.
Maximum Drain Current Vs.
Case Temperature
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
No
t
e
s
:
1. Du
ty factor D =
t / t
2. Peak
T
=
P
x Z
+ T
1
2
J
DM
thJ
C
C
P
t
t
DM
1
2
t , Rect
angular
Pul
se Dur
ati
on (s
ec)
Therm
al
Res
ponse
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D =
0.50
SING
LE PULSE
(TH
ERMA
L RESPON
SE)
25
50
75
100
125
150
175
0
10
20
30
40
50
T ,
Cas
e Temp
er
at
ur
e
( C)
I , Drai
n Current (A)
°
C
D
LI
MI
T
ED BY
PACKAGE
IRFR/U3412PbF
6
www.irf.com
25
50
75
100
125
150
175
0
50
100
150
200
250
300
Starting T
, Juncti
on T
em
per
ature
( C)
E , Single Pul
se Av
alanc
he Energy
(mJ
)
J
AS
°
I
D
TOP
B
O
TTOM
12A
21A
29A
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T
.
V
D
S
I
D
I
G
3mA
V
GS
.3
µ
F
50K
Ω
.2
µ
F
12V
Current
Regulator
Same
Type
as
D.U.T
.
Current
Sampling
Resistors
+
-
V
GS
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
V
GS
P1-P3
P4-P6
P7-P9
P10-P11
K684Z20Y5VF5UH5
Mfr. #:
Buy K684Z20Y5VF5UH5
Manufacturer:
Description:
Multilayer Ceramic Capacitors MLCC - Leaded K 50V 680NF -20/+80 % Y5V AMMO E3
Lifecycle:
New from this manufacturer.
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