IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFH42N50P2
IXFT42N50P2
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
e
∅ P
TO-247 Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-268 Outline
Terminals: 1 - Gate 2 - Drain
3 - Source 4 - Drain
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= 20V, I
D
= 0.5 • I
D25
, Note 1 23 36 S
C
iss
5300 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 555 pF
C
rss
43 pF
t
d(on)
23 ns
t
r
12 ns
t
d(off)
42 ns
t
f
9 ns
Q
g(on)
92 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
26 nC
Q
gd
36 nC
R
thJC
0.15 °C/W
R
thCS
0.21 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V 42 A
I
SM
Repetitive, Pulse Width Limited by T
JM
168 A
V
SD
I
F
= I
S
, V
GS
= 0V, Note 1 1.3 V
t
rr
250 ns
I
RM
12
A
Q
RM
1.05 μC
I
F
= 21A, -di/dt = 100A/μs
V
R
= 85V, V
GS
= 0V
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 3Ω (External)
