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MURHB840CTT4G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 7
1 Publication Order Number:
MURHB840CT/D
MURHB840CTG,
MURHB840CTT4G,
SURHB8840CTT4G
Power Rectifier
D
2
PAK Power Surface Mount Package
These state−of−the−art devices are designed for use in switching
power supplies, inverters and as free wheeling diodes.
Features
• Package Designed for Power Surface Mount Applications
• Ultrafast 28 Nanosecond Recovery Times
• 175°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0 @ 0.125 in
• High Temperature Glass Passivated Junction
• High Voltage Capability
• Low Leakage Specified @ 150°C Case Temperature
• Short Heat Sink Tab Manufactured − Not Sheared!
• Similar in Size to Industrial Standard TO−220 Package
• SURHB8 Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• SURHB8 Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
• These Packages are Pb-Free*
Mechanical Characteristics:
• Case: Epoxy, Molded, Epoxy Meets UL 94, V−0
• Weight: 1.7 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Device Meets MSL1 Requirements
• ESD Ratings:
♦ Machine Model, C (> 400 V)
♦ Human Body Model, 3B (> 8000 V)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
†
ORDERING INFORMATION
D
2
PAK
CASE 418B
STYLE 3
ULTRAFAST RECTIFIER
8.0 AMPERES, 400 VOLTS
1
3
4
MARKING DIAGRAM
http://onsemi.com
A = Assembly Location
Y = Year
WW = Work Week
UH840 = Device Code
G = Pb−Free Package
AKA = Diode Polarity
AY WW
UH840G
AKA
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MURHB840CTT4G D
2
PAK
(Pb−Free)
800 /
Tape & Reel
MURHB840CTG D
2
PAK
(Pb−Free)
50 Units/Rail
SURHB8840CTT4G D
2
PAK
(Pb−Free)
800 /
Tape & Reel
MURHB840CTG, MURHB840CTT4G, SURHB8840CTT4G
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
400 V
Average Rectified Forward Current
(Rated V
R
, T
C
= 120°C) Total Device
I
F(AV)
4.0
8.0
A
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz, T
C
= 120°C)
I
FM
8.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
100
A
Controlled Avalanche Energy W
AVAL
20 mJ
Operating Junction and Storage Temperature Range T
J
, T
stg
−65 to +175 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS (Per Leg)
Rating
Symbol Value Unit
Maximum Thermal Resistance, Junction−to−Case
R
q
JC
3.0 °C/W
Maximum Thermal Resistance, Junction−to−Ambient
R
q
JA
50 °C/W
ELECTRICAL CHARACTERISTICS (Per Leg)
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 1)
(i
F
= 4.0 A, T
C
= 150°C)
(i
F
= 4.0 A, T
C
= 25°C)
v
F
1.9
2.2
V
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, T
C
= 150°C)
(Rated DC Voltage, T
C
= 25°C)
i
R
500
10
mA
Maximum Reverse Recovery Time
(I
F
= 1.0 A, di/dt = 50 A/ms)
t
rr
28
ns
Typical Peak Reverse Recovery Current
(I
F
= 1.0 A, di/dt = 50 A/ms)
I
RM
0.7 A
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%
MURHB840CTG, MURHB840CTT4G, SURHB8840CTT4G
http://onsemi.com
3
Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current, Per Leg
Figure 3. Current Derating, Case Figure 4. Typical Capacitance, Per Leg
50
20
10
0.1
0.2
0.5
1
2
5
2.42.221.81.61.41.210.80.60.4
v
F
, INSTANTANEOUS VOLTAGE (VOLTS)
i
F
, INSTANTANEOUS FORWARD CURRENT (AMP)
T
J
= 150°C
100°C
25°C
V
R
, REVERSE VOLTAGE (VOLTS)
I
R
, REVERSE CURRENT (A)μ
0.1
0
1000
0.2
0.5
1
5
10
20
50
100
200
500
50 100 150 200 250 300 350 400
I
F
, AVERAGE POWER DISSIPATION (WATTS)
T
C
, CASE TEMPERATURE (°C)
0
110
2
4
6
8
10
120 130 140 150 160 170 180
T
J
= 150°C
100°C
25°C
RATED V
R
APPLIED
R
q
JC
= 3°C/W
DC
SQUARE
WAVE
C, CAPACITANCE (pF)
V
R
, REVERSE VOLTAGE (VOLTS)
0.01
1000
100
10
1
0.1 1 10 100
2
100
Figure 5. Forward Power Dissipation, Per Leg
P
F(AV)
, AVERAGE POWER DISSIPATION (WATTS)
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
1
20
18
16
14
12
10
8
6
4
2
0
2345678910
T
J
= 175°C
SQUARE WAVE
DC
P1-P3P4-P5

MURHB840CTT4G

Mfr. #:
Buy MURHB840CTT4G
Manufacturer:
ON Semiconductor
Description:
Rectifiers 400V 8A Ultrafast
Lifecycle:
New from this manufacturer.
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