© Semiconductor Components Industries, LLC, 2014
November, 2014 Rev. 14
1 Publication Order Number:
TIP100/D
TIP100, TIP101, TIP102
(NPN); TIP105, TIP106,
TIP107 (PNP)
Plastic Medium-Power
Complementary Silicon
Transistors
Designed for generalpurpose amplifier and lowspeed switching
applications.
Features
High DC Current Gain
h
FE
= 2500 (Typ) @ I
C
= 4.0 Adc
CollectorEmitter Sustaining Voltage @ 30 mAdc
V
CEO(sus)
= 60 Vdc (Min) TIP100, TIP105
= 80 Vdc (Min) TIP101, TIP106
= 100 Vdc (Min) TIP102, TIP107
Low CollectorEmitter Saturation Voltage
V
CE(sat)
= 2.0 Vdc (Max) @ I
C
= 3.0 Adc
= 2.5 Vdc (Max) @ I
C
= 8.0 Adc
Monolithic Construction with Builtin BaseEmitter Shunt Resistors
PbFree Packages are Available*
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO220AB
CASE 221A
STYLE 1
MARKING
DIAGRAM
DARLINGTON 8 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
6080100 VOLTS, 80 WATTS
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1
2
3
4
TIP10x = Device Code
x = 0, 1, 2, 5, 6, or 7
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
TIP10xG
AYWW
See detailed ordering and shipping information on page 3 of
this data sheet.
ORDERING INFORMATION
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)
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2
MAXIMUM RATINGS
Rating Symbol
TIP100,
TIP105
TIP101,
TIP106
TIP102,
TIP107
Unit
Collector Emitter Voltage V
CEO
60 80 100 Vdc
Collector Base Voltage V
CB
60 80 100 Vdc
Emitter Base Voltage V
EB
5.0 Vdc
Collector Current Continuous
Peak
I
C
8.0
15
Adc
Base Current I
B
1.0 Adc
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
80
0.64
W
W/°C
Unclamped Inductive Load Energy (1) E 30 mJ
Total Power Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
2.0
0.016
W
W/°C
Operating and Storage Junction Temperature Range T
J
, T
stg
65 to + 150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, JunctiontoCase
R
q
JC
1.56 °C/W
Thermal Resistance, JunctiontoAmbient
R
q
JA
62.5 °C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. I
C
= 1.1 A, L = 50 mH, P.R.F. = 10 Hz, V
CC
= 20 V, R
BE
= 100 W
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (1)
(I
C
= 30 mAdc, I
B
= 0) TIP100, TIP105
TIP101, TIP106
TIP102, TIP107
V
CEO(sus)
60
80
100
Vdc
Collector Cutoff Current
(V
CE
= 30 Vdc, I
B
= 0) TIP100, TIP105
(V
CE
= 40 Vdc, I
B
= 0) TIP101, TIP106
(V
CE
= 50 Vdc, I
B
= 0) TIP102, TIP107
I
CEO
50
50
50
mAdc
Collector Cutoff Current
(V
CB
= 60 Vdc, I
E
= 0) TIP100, TIP105
(V
CB
= 80 Vdc, I
E
= 0) TIP101, TIP106
(V
CB
= 100 Vdc, I
E
= 0) TIP102, TIP107
I
CBO
50
50
50
mAdc
Emitter Cutoff Current (V
BE
= 5.0 Vdc, I
C
= 0) I
EBO
8.0 mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(I
C
= 3.0 Adc, V
CE
= 4.0 Vdc)
(I
C
= 8.0 Adc, V
CE
= 4.0 Vdc)
h
FE
1000
200
20,000
CollectorEmitter Saturation Voltage
(I
C
= 3.0 Adc, I
B
= 6.0 mAdc)
(I
C
= 8.0 Adc, I
B
= 80 mAdc)
V
CE(sat)
2.0
2.5
Vdc
BaseEmitter On Voltage (I
C
= 8.0 Adc, V
CE
= 4.0 Vdc) V
BE(on)
2.8 Vdc
DYNAMIC CHARACTERISTICS
SmallSignal Current Gain (I
C
= 3.0 Adc, V
CE
= 4.0 Vdc, f = 1.0 MHz) h
fe
4.0
Output Capacitance (V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz) TIP105, TIP106, TIP107
TIP100, TIP101, TIP102
C
ob
300
200
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)
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3
Figure 1. Darlington Circuit Schematic
BASE
EMITTER
COLLECTOR
8.0 k 120
BASE
EMITTER
COLLECTOR
8.0 k 120
ORDERING INFORMATION
Device Package Shipping
TIP100 TO220 50 Units / Rail
TIP100G TO220
(PbFree)
50 Units / Rail
TIP101 TO220 50 Units / Rail
TIP101G TO220
(PbFree)
50 Units / Rail
TIP102 TO220 50 Units / Rail
TIP102G TO220
(PbFree)
50 Units / Rail
TIP105 TO220 50 Units / Rail
TIP105G TO220
(PbFree)
50 Units / Rail
TIP106 TO220 50 Units / Rail
TIP106G TO220
(PbFree)
50 Units / Rail
TIP107 TO220 50 Units / Rail
TIP107G TO220
(PbFree)
50 Units / Rail
80
0
0 20 40 60 80 100 120 160
Figure 2. Power Derating
T, TEMPERATURE (°C)
P
D
, POWER DISSIPATION (WATTS)
40
20
60
140
T
C
4.0
0
2.0
1.0
3.0
T
A
T
A
T
C

TIP107

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Darlington Transistors PNP Power Darlington
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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