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NJW0302G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 1
1 Publication Order Number:
NJW0281/D
NJW0281G (NPN)
NJW0302G (PNP)
Complementary NPN-PNP
Power Bipolar Transistors
These complementary devices are lower power versions of the
popular NJW3281G and NJW1302G audio output transistors. With
superior gain linearity and safe operating area performance, these
transistors are ideal for high fidelity audio amplifier output stages and
other linear applications.
Features
• Exceptional Safe Operating Area
• NPN/PNP Gain Matching within 10% from 50 mA to 3 A
• Excellent Gain Linearity
• High BVCEO
• High Frequency
• These Devices are Pb−Free and are RoHS Compliant
Benefits
• Reliable Performance at Higher Powers
• Symmetrical Characteristics in Complementary Configurations
• Accurate Reproduction of Input Signal
• Greater Dynamic Range
• High Amplifier Bandwidth
Applications
• High−End Consumer Audio Products
♦ Home Amplifiers
♦ Home Receivers
• Professional Audio Amplifiers
♦ Theater and Stadium Sound Systems
♦ Public Address Systems (PAs)
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
250 Vdc
Collector−Base Voltage V
CBO
250 Vdc
Emitter−Base Voltage V
EBO
5.0 Vdc
Collector−Emitter Voltage − 1.5 V V
CEX
250 Vdc
Collector Current − Continuous I
C
15 Adc
Collector Current − Peak (Note 1) I
CM
30 Adc
Base Current − Continuous I
B
1.5 Adc
Total Power Dissipation @ T
C
= 25°C P
D
150 Watts
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−   65 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%.
15 AMPERES
COMPLEMENTARY SILICON
POWER TRANSISTORS
250 VOLTS, 150 WATTS
http://onsemi.com
Device Package Shipping
ORDERING INFORMATION
TO−3P
CASE 340AB
STYLES 1,2,3
MARKING
DIAGRAM
NJW0302G TO−3P
(Pb−Free)
30 Units/Rail
NJW0281G TO−3P
(Pb−Free)
30 Units/Rail
xxxx = 0281 or 0302
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
NJWxxxG
AYWW
1
2
3
4
123
1
BASE
EMITTER 3
COLLECTOR 2, 4
1
BASE
EMITTER 3
COLLECTOR 2, 4
PNP
NPN
NJW0281G (NPN) NJW0302G (PNP)
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Case R
θ
JC
0.83 °C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 30 mA, I
B
= 0)
V
CEO(sus)
250 − V
Collector Cutoff Current
(V
CB
= 250 V, I
E
= 0)
I
CBO
− 10
mA
Emitter Cutoff Current
(V
EB
= 5.0 V, I
C
= 0)
I
EBO
− 5.0
mA
ON CHARACTERISTICS
DC Current Gain
(I
C
= 0.5 A, V
CE
= 5.0 V)
(I
C
= 1.0 A, V
CE
= 5.0 V)
(I
C
= 3.0 A, V
CE
= 5.0 V)
h
FE
75
75
75
150
150
150
−
Collector−Emitter Saturation Voltage
(I
C
= 5.0 A, I
B
= 0.5 A)
V
CE(sat)
− 1.0 V
Base−Emitter On Voltage
(I
C
= 5.0 A, V
CE
= 5.0 V)
V
BE(on)
− 1.2 V
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 1.0 A, V
CE
= 5.0 V, f
test
= 1.0 MHz)
f
T
30 − MHz
Output Capacitance
(V
CB
= 10 V, I
E
= 0, f
test
= 1.0 MHz)
C
ob
− 400 pF
160
0
T
C
, CASE TEMPERATURE (°C)
40 60 100 120 16080 14020
Figure 1. Power Derating
0
20
40
60
80
100
140
120
P
D
, POWER DISSIPATION (W)
0.01
0.1
1
10
100
1 10 100 1000
1.0 ms
10 ms
5.0 ms
100 ms
DC
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
Figure 2. Safe Operating Area
NJW0281G (NPN) NJW0302G (PNP)
http://onsemi.com
3
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.01 0.1 1 10 100
I
C
, COLLECTOR CURRENT (A)
Figure 3. NJW0281G DC Current Gain
100°C
−25°C
25°C
Figure 4. NJW0302G DC Current Gain
V
CE
= 5.0 V
h
FE
, DC CURRENT GAIN
I
C
, COLLECTOR CURRENT (A)
Figure 5. NJW0281G Base−Emitter Voltage
I
C
, COLLECTOR CURRENT (A)
0.01 0.1 1 10 100
Figure 6. NJW0302G Base−Emitter Voltage
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
V
CE
= 5.0 V
25°C
−25°C
100°C
V
BE(on)
, BASE−EMITTER VOLTAGE (V) h
FE
, DC CURRENT GAIN
10
100
500
0.05 0.1 1 10 50
100°C
−25°C
25°C
V
CE
= 5.0 V
−0.1
0.4
0.9
1.4
1.9
2.4
10
100
500
0.05 0.1 1 10 50
100°C
−25°C
25°C
V
CE
= 5.0 V
Figure 7. NJW0281G Saturation Voltage
0.01
0.1
1
10
0.01 0.1 1 10 100
I
C
/I
B
= 10
25°C
−25°C
100°C
I
C
, COLLECTOR CURRENT (A)
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.01
0.1
1
10
0.01 0.1 1 10 100
25°C
100°C100°C
−25°C
Figure 8. NJW0302G Saturation Voltage
I
C
, COLLECTOR CURRENT (A)
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
I
C
/I
B
= 10
P1-P3P4-P5

NJW0302G

Mfr. #:
Buy NJW0302G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 150W
Lifecycle:
New from this manufacturer.
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