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MCC132-18io1

P1-P3P4-P6
MCC132-18io1
g
C-C (1:1)
e
n
d
r
j
B-B (1:1)
b
DCB
A (3:1)
c
a
M6
p
f
2.8
/
0.8
A
o
Dim.
MIN
[mm]
MAX
[mm]
MIN
[inch]
MAX
[inch]
a 30.0 30.6 1.181 1.205
b
c 64.0 65.0 2.520 2.559
d 6.5 7.0 0.256 0.275
e 4.9 5.1 0.193 0.201
f 28.6 29.2 1.126 1.150
g 7.3 7.7 0.287 0.303
h 93.5 94.5 3.681 3.720
i 79.5 80.5 3.130 3.169
j 4.8 5.2 0.189 0.205
k 33.4 34.0 1.315 1.339
l 16.7 17.3 0.657 0.681
m 22.7 23.3 0.894 0.917
n 22.7 23.3 0.894 0.917
o 14.0 15.0 0.551 0.591
p
q 22.8 23.3 0.898 0.917
r 1.8 2.4 0.071 0.041
typ. 0.25 typ. 0.010
typ. 10.5 typ. 0.413
k
h
1 2 3
4
5
6
7
n m
l
1
1
1
0
8
9
q
i
C C
B
B
3 1 2
6 57 4
Outlines Y4
IXYS reserves the right to change limits, conditions and dimensions.
20160408bData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
MCC132-18io1
0 25 50 75 100 125 150
T
a
[°C]
T
C
[°C]
t [ms]t [s]
0.001 0.01 0.1 1
0
1000
2000
3000
4
0
00
011
10
4
10
5
10
6
0 25 50 75 100 125 150
0
40
80
120
160
200
240
280
3
20
I
TSM
[A]
I
TAVM
[A]
0 50 100 150 200 250
0
40
80
120
160
200
240
280
320
360
400
P
tot
[W]
I
TAVM
[A]
0 25 50 75 100 125 1500 100 200 300 400 500
0
200
400
600
800
1000
1200
1400
I
2
dt
[A
2
s]
T
VJ
= 45°C
180° sin
120°
60°
30°
DC
T
VJ
= 125°C
50 Hz
80% V
RRM
T
VJ
= 45°C
T
VJ
= 125°C
R
thKA
K/W
0.3
0.4
0.5
0.6
0.8
1.0
1.4
1.8
P
tot
[W]
I
dAVM
[A]
T
a
[°C]
B6
Circuit
3xMCC132 or
3x MCD132
Fig. 1 Surge overload current I
TSM
,
I
FSM
: Crest value, t: duration
Fig. 2 I
2
t versus time (1-10 ms)
Fig. 3 Max. forward current
at case temperature
Fig. 4 Power dissipation vs. on-state current & ambient temperature
(per thyristor or diode)
Fig. 5 Gate trigger characteristics
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct
output current and ambient temperature
Fig. 7 Gate trigger delay time
180° sin
120°
60°
30°
DC
R
thKA
K/W
0.2
0.08
0.1
0.15
0.04
0.06
0.03
0.3
0.01 0.1 1 10
0.1
1
10
100
0.01 0.1 1 10
0.1
1
10
100
I
G
[A]
V
G
[V]
I
G
[A]
T
VJ
= 25°C
t
gd
[μs]
I
GT
(T
VJ
= -40°C)
I
GT
(T
VJ
= 0°C)
I
GT
(T
VJ
= 25°C)
125°C
25°C
limit
typ.
t
p
= 30 µs
t
p
= 500 µs
P
GM
= 120 W
60 W
P
GAV
= 8 W
I
GD
Thyristor
IXYS reserves the right to change limits, conditions and dimensions.
20160408bData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
MCC132-18io1
0 100 200 300 400
0
400
800
1200
1600
t [s]
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
0.0
0.1
0.2
0.3
0.4
0.5
Z
thJC
[K/
W]
I
RMS
[A]
P
tot
[
W]
0 25 50 75 100 125 150
T
a
[°C]
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.0
0.1
0.2
0.3
0.4
Circuit
W3
3xMCC132 or
3xMCD132
Z
thJK
[K/W]
t [s]
DC
180°
120°
60°
30°
Fig. 8 Three phase AC-controller: Power dissipation versus
RMS output current and ambient temperature
Fig. 9 Transient thermal impedance junction to case (per thyristor/diode)
F
i
g.
10
Transie
n
t
therma
l
im
p
edance
j
un
c
ti
o
n
to
he
a
ts
i
n
k
(
p
e
r
thyristor/di
o
de
)
R
thJC
for various conduction angles d:
d R
thJC
[K/W]
DC 0.230
180° 0.244
120° 0.255
60° 0.283
30° 0.321
Constants for Z
thJC
calculation:
i R
thi
[K/W] t
i
[s]
1 0.0095 0.001
2 0.0175 0.065
3 0.2030 0.400
R
thJK
for various conduction angles d:
d R
thJK
[K/W]
DC 0.330
180° 0.344
120° 0.355
60° 0.383
30° 0.421
Constants for Z
thJK
calculation:
i R
thi
[K/W] t
i
[s]
1 0.0095 0.001
2 0.0175 0.065
3 0.2030 0.400
4 0.1000 1.290
0.15
0.1
0.08
R
thKA
K/W
0.2
0.03
0.04
0.06
0.3
DC
180°
120°
60°
30°
Thyristor
IXYS reserves the right to change limits, conditions and dimensions.
20160408bData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
P1-P3P4-P6

MCC132-18io1

Mfr. #:
Buy MCC132-18io1
Manufacturer:
Littelfuse
Description:
Discrete Semiconductor Modules 132 Amps 1800V
Lifecycle:
New from this manufacturer.
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