SJPB-H4VL

V
RSM
= 40 V, I
F(AV)
= 2.0 A
Schottky Diode
SJPB-H4 Data Sheet
SJPB-H4-DSE Rev.1.0 SANKEN ELCTRIC CO., LTD. 1
Apr. 12, 2017 http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016
Description
The SJPB-H4 is a 40 V, 2.0 A Schottky diode with
allowing improvements in V
F
and I
R
characteristics.
These characteristic features contribute to improving
power supply efficiency and to enabling high-frequency
systems.
Features
V
RSM
------------------------------------------------------ 40 V
I
F(AV)
------------------------------------------------------ 2.0 A
V
F
(I
F
= 2.0 A) ----------------------------------- 0.50 V typ.
Bare Lead Frame: Pb-free (RoHS Compliant)
Suitable for High Reliability and Automotive
Requirement
Applications
The high speed switching applications as follows:
DC-DC Converter
Adapter
Package
SJP
(1)
(2)
(1) Cathode
(2) Anode
Not to scale
(2)
(1)
SJPB-H4
SJPB-H4-DSE Rev.1.0 SANKEN ELCTRIC CO., LTD. 2
Apr. 12, 2017 http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016
Absolute Maximum Ratings
Unless otherwise specified, T
A
= 25 °C.
Parameter Symbol Rating Unit Conditions
Peak Repetitive Reverse Voltage V
RSM
40 V
Repetitive Reverse Voltage V
RM
40 V
Average Forward Current I
F(AV)
2.0 A See Figure 1 and Figure 2
Surge Forward Current I
FSM
50 A
Half cycle sine wave,
positive side, 10 ms, 1 shot
I
2
t Limiting Value I
2
t 12.5 A
2
s 1 ms t 10ms
Junction Temperature T
J
40 to 150 °C
Storage Temperature T
STG
40 to 150 °C
Electrical Characteristics
Unless otherwise specified, T
A
= 25 °C.
Parameter Symbol Conditions Min. Typ. Max. Unit
Forward Voltage Drop V
F
I
F
= 2.0 A 0.50 0.55 V
Reverse Leakage Current I
R
V
R
= V
RM
200 µA
Reverse Leakage Current
Under High Temperature
HI
R
V
R
= V
RM
, T
J
= 150 °C 70 mA
Thermal Resistance
(1)
R
th(J-L)
20 °C/W
(1)
R
th (J-L)
is thermal resistance between junction and lead.
SJPB-H4
SJPB-H4-DSE Rev.1.0 SANKEN ELCTRIC CO., LTD. 3
Apr. 12, 2017 http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016
Rating and Characteristic Curves
Figure 1. T
C
vs. I
F(AV)
Typical Characteristics
(V
R
= 0 V)
Figure 2. T
C
vs. I
F(AV)
Typical Characteristics
(V
R
= 40 V)
Figure 3. V
F
vs. I
F
Typical Characteristics
Figure 4. V
R
vs. I
R
Typical Characteristics
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
100 110 120 130 140 150
Forward Current, I
F(AV)
(A)
Case Temperature, T
C
(°C)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
50 100 150
Average Forward Current, I
F(AV)
(A)
Case Temperature, T
C
(°C)
0.001
0.01
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0
Forward Current, I
F
(A)
Forward Voltage, V
F
(V)
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
0 10 20 30 40
Reverse Current, I
R
(A)
Reverse Voltage, V
R
(V)
T
J
= 150 °C
T
J
= 25 °C
T
J
= 100 °C
T
J
= 25 °C
T
J
= 100 °C
T
J
= 150 °C
T
J
= 150 °C
t
T
DC
t/T = 1/2
t/T = 1/3
t/T = 1/6
Sine wave
t/T = 1/3, sine wave
t/T = 1/2
DC
t/T = 1/6
T
J
= 150 °C
t
T

SJPB-H4VL

Mfr. #:
Manufacturer:
Description:
DIODE SCHOTTKY SMD
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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