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PHD97NQ03LT,118
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
PHD97NQ03L
T_1
© NXP B.V
. 2009. All
rights reserved.
Product data sheet
Rev
. 01 — 24 March 2009
6 of 12
NXP Semiconductors
PHD97NQ03L
T
N-channel T
renchMOS logic level FET
t
d(on)
turn-on delay time
V
DS
=1
2V
;
R
L
=0
.
5
Ω
; V
GS
=4
.
5V
;
R
G(ext)
=5
.
6
Ω
-1
8
-n
s
t
r
rise time
-
33
-
ns
t
d(off
)
turn-off delay time
-
20
-
ns
t
f
fall time
-
12
-
n
s
Source-drain di
ode
V
SD
source-drain voltage
I
S
=2
5A
;
V
GS
=0V
;
T
j
=2
5°
C
;
see
Figure 12
-
0.87
1.2
V
t
rr
reverse recovery time
I
S
=2
0A
;
d
I
S
/dt = -100 A/
µs; V
GS
=0V
;
V
DS
=3
0V
-3
8
-n
s
Q
r
recovered charge
-
14
-
nC
T
able 6.
Characteristics
…continued
Symbol
Parameter
Conditions
Min
Ty
p
Max
Unit
Fig 5.
Gate-source threshold volta
ge as a function of
junction temperature
Fig 6.
Sub-th
reshold drain current as
a function of
gate-source v
oltage
T
j
(
°
C)
-60
180
120
06
0
003aab272
1
2
3
0.5
1.5
V
GS(th)
(V)
0
max
ty
p
min
003aab271
10
−
4
10
−
5
10
−
3
I
D
(A)
10
−
6
V
GS
(V)
0
2.5
2
1
1.5
0.5
typ
max
min
PHD97NQ03L
T_1
© NXP B.V
. 2009. All
rights reserved.
Product data sheet
Rev
. 01 — 24 March 2009
7 of 12
NXP Semiconductors
PHD97NQ03L
T
N-channel T
renchMOS logic level FET
Fig 7.
Normalized drain-source on-state resistance
factor as a f
unction of junctio
n temperature
Fig 8.
Dr
ain-source on-sta
te resistance
as a function
of drain c
urrent; typica
l values
Fig 9.
Gate-source voltage as a function
of gate
charge; typical values
Fig 10.
Gate charge wave
form definitions
T
j
(
°
C)
−
60
180
120
06
0
003aab467
0.8
1.2
0.4
1.6
2
a
0
003aab537
0
5
10
15
20
25
0
2
04
0
6
08
0
I
D
(A)
R
DS
on
(m
Ω
)
4.
5
3.
7
3.
3
4.
1
10
6
5
V
GS
(V) =
003aab539
0
2
4
6
8
10
01
0
2
0
3
0
Q
G
(n
C)
V
GS
(V)
I
D
= 25 A
T
j
= 25
°
C
V
DS
= 19 V
12 V
003aaa50
8
V
GS
V
GS(th)
Q
GS1
Q
GS2
Q
GD
V
DS
Q
G(tot)
I
D
Q
GS
V
GS(pl)
PHD97NQ03L
T_1
© NXP B.V
. 2009. All
rights reserved.
Product data sheet
Rev
. 01 — 24 March 2009
8 of 12
NXP Semiconductors
PHD97NQ03L
T
N-channel T
renchMOS logic level FET
Fig
11.
Inp
ut, output and reverse transfer capacitan
ces
as a function of
drain-source voltage
; typical
values
Fig 12.
S
ource current as
a function
of source-drain
voltage; typical values
003aab542
10
2
10
3
10
4
10
-1
1
10
10
2
V
DS
(V)
C
(p
F
)
C
iss
C
rs
s
C
os
s
003aab541
0
20
40
60
80
0
0
.4
0
.8
1
.2
V
SD
(V)
I
S
(A)
T
j
= 25
°
C
175
°
C
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
PHD97NQ03LT,118
Mfr. #:
Buy PHD97NQ03LT,118
Manufacturer:
Nexperia
Description:
MOSFET Trans MOSFET N-CH 25V 75A 3-Pin
Lifecycle:
New from this manufacturer.
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