RN2710JE,RN2711JE
2014-03-01
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)
RN2710JE, RN2711JE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
• Two devices are incorporated into an Extreme-Super-Mini (5-pin)
package.
• Incorporating a bias resistor into a transistor reduces parts count.
• Reducing the parts count enables the manufacture of ever more
compact
equipment and lowers assembly cost.
• A wide range of resistor values are available for use in various circuit
designs.
• Complementary to RN1710JE, RN1711JE
Equivalent Circuit
Absolute Maximum Ratings
(Ta = 25°C)
(Q1, Q2 common)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Unit: mm
1.BASE1
2.EMITTER
3.BASE2
4.COLLECTOR2
5.COLLECTOR1
(B1)
(E)
(B2)
(C2)
(C1)
JEDEC ―
JEITA ―
TOSHIBA 2-2P1D
Weight: 0.003g (typ.)
Equivalent Circuit
(top view)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
−50 V
Collector-emitter voltage V
CEO
−50 V
Emitter-base voltage V
EBO
−5 V
Collector current I
C
−100 mA
Collector power dissipation P
C
(Note 1) 100 mW
Junction temperature T
j
150 °C
Storage temperature range T
stg
−55 to 150 °C
R1
B
C
E
5 4
1 2 3
Q2 Q1
Start of commercial production
2000-06
