TLP185(GRH-TL,SE Datasheet TLP185(GB-TPL,SE, TLP185(GRH-TL,SE, TLP185(GB,SE | P1-P3

TLP185(SE

1

Photocouplers GaAs Infrared LED & Photo Transistor

TLP185(SE

Start of commercial production

2013-01

1.

1. Applications

Applications

• Office Equipment

• Programmable Logic Controllers (PLCs)

• AC Adapters

• I/O Interface Boards

2.

2. General

General

The TLP185(SE consist of a photo transistor optically coupled to gallium arsenide infrared emitting diode.

The TLP185(SE photocoupler is housed in the very small and thin SO6 package.

Since TLP185(SE is smaller than DIP package, it's suitable for high-density surface mounting application such

as programmable controllers.

3.

3. Features

Features

(1) Collector-emitter voltage: 80 V (min)

(2) Current transfer ratio: 50% (min)

Rank GB: 100% (min)

(3) Isolation voltage: 3750 Vrms (min)

(4) Operating temperature: -55 to 110 

(5) Safety standards

UL-approved: UL1577, File No.E67349

cUL-approved: CSA Component Acceptance Service No.5A File No.E67349

VDE-approved: EN60747-5-5 (Note 1)

(Note 1)

CQC-approved: GB4943.1, GB8898 Thailand Factory

Note 1: When an EN60747-5-5 approved type is needed, please designate the Option (V4)

Option (V4)

Option (V4).

4.

4. Packaging and Pin Assignment

Packaging and Pin Assignment

11-4M1S

1: Anode

3: Cathod

4: Emitter

6: Collector

2015-10-29

Rev.4.0

TLP185(SE

2

5.

5. Principle of Operation

Principle of Operation

5.1.

5.1. Mechanical Parameters

Mechanical Parameters

Characteristics

Creepage distances

Clearance

Internal isolation thickness

Min

5.0

0.4

Unit

mm

6.

6. Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, T

a

= 25

= 25 



)

)

LED

Detector

Common

Characteristics

Input forward current

Input forward current derating

Input forward current (pulsed)

Input reverse voltage

Input power dissipation

derating

Junction temperature

Collector-emitter voltage

Emitter-collector voltage

Collector current

Collector power dissipation

derating

Junction temperature

Operating temperature

Storage temperature

Lead soldering temperature

Total power dissipation

Isolation voltage

(T

a

≥ 90 )

(T

a

≥ 90 )

(T

a

≥ 25 )

(10 s)

AC, 60 s, R.H. ≤ 60%

Symbol

I

F

∆I

F

/∆T

a

I

FP

V

R

P

D

∆P

D

/∆T

a

T

j

V

CEO

V

ECO

I

C

P

C

∆P

C

/∆T

a

T

j

T

opr

T

stg

T

sol

P

T

BV

S

Note

(Note 1)

(Note 2)

Rating

50

-1.5

1

5

100

-2.86

125

80

7

50

150

-1.5

125

-55 to 110

-55 to 125

260

200

3750

Unit

mA

mA/

A

V

mW

mW/



V

mA

mW

mW/



mW

Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Pulse width (PW) ≤ 100 µs, f = 100 Hz

Note 2: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are

shorted together.

2015-10-29

Rev.4.0

TLP185(SE

3

7.

7. Electrical Characteristics (Unless otherwise specified, T

Electrical Characteristics (Unless otherwise specified, T

a

= 25

= 25 



)

)

LED

Detector

Characteristics

Input forward voltage

Input reverse current

Input capacitance

Collector-emitter breakdown

voltage

Emitter-collector breakdown

voltage

Dark Current

Collector-emitter capacitance

Symbol

V

F

I

R

C

t

V

(BR)CEO

V

(BR)ECO

I

DARK

C

CE

Note Test Condition

I

F

= 10 mA

V

R

= 5 V

V = 0 V, f = 1 MHz

I

C

= 0.5 mA

I

E

= 0.1 mA

V

CE

= 48 V

V

CE

= 48 V, T

a

= 85 

V = 0 V, f = 1 MHz

Min

1.1



80

7



Typ.

1.25



30



0.01

2

10

Max

1.4

5



0.08

50



Unit

V

µA

pF

V

µA

pF

8.

8. Coupled Electrical Characteristics (Unless otherwise specified, T

Coupled Electrical Characteristics (Unless otherwise specified, T

a

= 25

= 25 



)

)

Characteristics

Current transfer ratio

Saturated current transfer ratio

Collector-emitter saturation

voltage

OFF-state collector current

Symbol

I

C

/I

F

I

C

/I

F(sat)

V

CE(sat)

I

C(off)

Note

(Note 1)

Test Condition

I

F

= 5 mA, V

CE

= 5 V

I

F

= 5 mA, V

CE

= 5 V, Rank GB

I

F

= 1 mA, V

CE

= 0.4 V

I

F

= 1 mA, V

CE

= 0.4 V, Rank GB

I

C

= 2.4 mA, I

F

= 8 mA

I

C

= 0.2 mA, I

F

= 1 mA

I

C

= 0.2 mA, I

F

= 1 mA, Rank GB

V

F

= 0.7 V, V

CE

= 48 V

Min

50

100



30



Typ.



60



0.2



1

Max

600



0.3



0.3

10

Unit

%

V

µA

Note 1: See Table 8.1 for current transfer ratio.

Table

Table 8.1

8.1

8.1 Current Transfer Ratio (CTR) Rank (Note) (Unless otherwise specified, T

Current Transfer Ratio (CTR) Rank (Note) (Unless otherwise specified, T

a

= 25

= 25 



)

)

Rank

Blank

Y

GR

GB

BL

YH

GRL

GRH

BLL

Test Condition

I

F

= 5 mA, V

CE

= 5 V

Current

transfer ratio

I

C

/I

F

Min

50

100

200

75

100

150

200

Current

transfer ratio

I

C

/I

F

Max

600

150

300

600

150

200

300

400

Marking of

Classification

Blank, YE, GR, GB,

BL, Y+, G, G+, B

YE

GR

GB

BL

Y+

G

G+

B

Unit

%

Note: Specify both the part number and a rank in this format when ordering.

Example: TLP185(GB,SE

For safety standard certification, however, specify the part number alone.

Example: TLP185(GB,SE: TLP185

2015-10-29

Rev.4.0

TLP185(GRH-TL,SE

TLP185(GRH-TL,SE

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