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74LVC11D,112

P1-P3P4-P6P7-P9P10-P12P13-P15
74LVC11 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 6 — 17 November 2011 3 of 14
NXP Semiconductors
74LVC11
Triple 3-input AND gate
6. Functional description
[1] H = HIGH voltage level; L = LOW voltage level; X = don’t care
7. Limiting values
[1] The minimum input voltage ratings may be exceeded if the input current ratings are observed.
[2] The output voltage ratings may be exceeded if the output current ratings are observed.
[3] For SO14 packages: above 70 C the value of P
D
derates linearly with 8 mW/K.
For (T)SSOP14 packages: above 60 C the value of P
D
derates linearly with 5.5 mW/K.
For DHVQFN14 packages: above 60 C the value of P
D
derates linearly with 4.5 mW/K.
1Y, 2Y, 3Y 12, 6, 8 data output
GND 7 ground (0 V)
V
CC
14 supply voltage
Table 2. Pin description
…continued
Symbol Pin Description
Table 3. Function selection
[1]
Input Output
nA nB nC nY
LXXL
XLXL
XXLL
HHHH
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage 0.5 +6.5 V
I
IK
input clamping current V
I
< 0 V 50 - mA
V
I
input voltage
[1]
0.5 +6.5 V
I
OK
output clamping current V
O
> V
CC
or V
O
< 0 V - 50 mA
V
O
output voltage
[2]
0.5 V
CC
+ 0.5 V
I
O
output current V
O
= 0 V to V
CC
- 50 mA
I
CC
supply current - 100 mA
I
GND
ground current 100 - mA
P
tot
total power dissipation T
amb
= 40 C to +125 C
[3]
-500 mW
T
stg
storage temperature 65 +150 C
74LVC11 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 6 — 17 November 2011 4 of 14
NXP Semiconductors
74LVC11
Triple 3-input AND gate
8. Recommended operating conditions
9. Static characteristics
Table 5. Recommended operating conditions
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage 1.65 - 3.6 V
functional 1.2 - - V
V
I
input voltage 0 - 5.5 V
V
O
output voltage 0 - V
CC
V
T
amb
ambient temperature 40 - +125 C
t/V input transition rise and fall
rate
V
CC
= 1.65 V to 2.7 V 0 - 20 ns/V
V
CC
= 2.7 V to 3.6 V 0 - 10 ns/V
Table 6. Static characteristics
At recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
V
IH
HIGH-level
input voltage
V
CC
= 1.2 V 1.08 - - 1.08 - V
V
CC
= 1.65 V to 1.95 V 0.65 V
CC
- - 0.65 V
CC
-V
V
CC
= 2.3 V to 2.7 V 1.7 - - 1.7 - V
V
CC
= 2.7 V to 3.6 V 2.0 - - 2.0 - V
V
IL
LOW-level
input voltage
V
CC
= 1.2 V - - 0.12 - 0.12 V
V
CC
= 1.65 V to 1.95 V - - 0.35 V
CC
-0.35 V
CC
V
V
CC
= 2.3 V to 2.7 V - - 0.7 - 0.7 V
V
CC
= 2.7 V to 3.6 V - - 0.8 - 0.8 V
V
OH
HIGH-level
output
voltage
V
I
=V
IH
or V
IL
I
O
= 100 A;
V
CC
=1.65Vto3.6V
V
CC
0.2 - - V
CC
0.3 - V
I
O
= 4mA; V
CC
= 1.65 V 1.2 - - 1.05 - V
I
O
= 8mA; V
CC
= 2.3 V 1.8 - - 1.65 - V
I
O
= 12 mA; V
CC
= 2.7 V 2.2 - - 2.05 - V
I
O
= 18 mA; V
CC
= 3.0 V 2.4 - - 2.25 - V
I
O
= 24 mA; V
CC
= 3.0 V 2.2 - - 2.0 - V
V
OL
LOW-level
output
voltage
V
I
=V
IH
or V
IL
I
O
= 100 A;
V
CC
= 1.65 V to 3.6 V
- - 0.2 - 0.3 V
I
O
=4mA; V
CC
= 1.65 V - - 0.45 - 0.65 V
I
O
=8mA; V
CC
= 2.3 V - - 0.6 - 0.8 V
I
O
=12mA; V
CC
= 2.7 V - - 0.4 - 0.6 V
I
O
=24mA; V
CC
= 3.0 V - - 0.55 - 0.8 V
I
I
input leakage
current
V
CC
= 3.6 V; V
I
=5.5VorGND - 0.1 5-20 A
74LVC11 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 6 — 17 November 2011 5 of 14
NXP Semiconductors
74LVC11
Triple 3-input AND gate
[1] All typical values are measured at V
CC
= 3.3 V (unless stated otherwise) and T
amb
=25C.
10. Dynamic characteristics
[1] Typical values are measured at T
amb
=25C and V
CC
= 1.2 V, 1.8 V, 2.5 V, 2.7 V, and 3.3 V respectively.
[2] t
pd
is the same as t
PLH
and t
PHL
.
[3] C
PD
is used to determine the dynamic power dissipation (P
D
in W).
P
D
=C
PD
V
CC
2
f
i
N+(C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz; f
o
= output frequency in MHz
C
L
= output load capacitance in pF
V
CC
= supply voltage in Volts
N = number of inputs switching
(C
L
V
CC
2
f
o
) = sum of the outputs
I
CC
supply
current
V
CC
= 3.6 V; V
I
=V
CC
or GND;
I
O
=0A
-0.110 - 40A
I
CC
additional
supply
current
per input pin;
V
CC
= 2.7 V to 3.6 V;
V
I
=V
CC
0.6 V; I
O
=0A
- 5 500 - 5000 A
C
I
input
capacitance
V
CC
= 0 V to 3.6 V;
V
I
=GNDtoV
CC
-5.0- - -pF
Table 6. Static characteristics
…continued
At recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
Table 7. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V). For test circuit see Figure 7
.
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
t
pd
propagation delay nA, nB, nC to nY; see Figure 6
[2]
V
CC
= 1.2 V - 14.0 - - - ns
V
CC
= 1.65 V to 1.95 V 1.0 4.7 12.2 1.0 14.1 ns
V
CC
= 2.3 V to 2.7 V 1.5 2.8 6.9 1.5 8.0 ns
V
CC
= 2.7 V 1.5 2.9 7.0 1.5 8.1 ns
V
CC
= 3.0 V to 3.6 V 1.5 2.5 6.2 1.5 7.2 ns
C
PD
power dissipation
capacitance
per gate; V
I
=GNDtoV
CC
[3]
V
CC
= 1.65 V to 1.95 V - 3.1 - - - pF
V
CC
= 2.3 V to 2.7 V - 6.2 - - - pF
V
CC
= 3.0 V to 3.6 V - 9.0 - - - pF
P1-P3P4-P6P7-P9P10-P12P13-P15

74LVC11D,112

Mfr. #:
Buy 74LVC11D,112
Manufacturer:
Nexperia
Description:
Logic Gates 3.3V TRIPLE 3-INPUT
Lifecycle:
New from this manufacturer.
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