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RF04UA2DTR

P1-P3P4-P4
Data Sheet
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Super Fast Recovery Diode
RF04UA2D
Serie
s
Dimensions (Unit : mm) Land size figur
e
(Unit : mm)
Standard Fast Recover
y
Application
s
High frequency rectificatio
n
Features
Structur
e
Taping dimensions (Unit : mm)
Absolute maximum ratings (Ta=25C)
Symbol
V
RM
V
R
T
j
Tstg
(* Standard of per diode
Electrical characteristics (Tj=25C)
Symbol Unit
Forward voltage
V
F
V
Reverse current
I
R
A
Reverse recovery time trr ns
Parameter
Storage temperature -40 to +150
C
A
one cycle peak value, Tj=25C
Junction temperature 150
C
Forward current surge peak
I
FSM
60Hz half sin wave, Non-repetitive
1
0.4 A
60Hz half sin wave,resistive load
Tc=130C
Average rectified forward current Io/2
Glass epoxy substrate mounted
Ta=25C
Reverse voltage Direct voltage 200 V
Limits Uni
t
Repetitive peak Reverse voltage 200 V
Parameter Conditions
10
I
F
=0.5A,I
R
=1A,Irr=0.25×I
R －
11 25
V
R
=200V
－
0.01
Max.
I
F
=0.2
A
－
0.86 0.98
Conditions Min. Typ.
2)High reliability
Constructio
n
Silicon epitaxial plane
r
1)Surface mounting type (TSMD6)
TSMD6
0.8
1.0 min.
0.45 0.35
1.9
0.7
0.95
0.450.35
2.4
0.95
1.1±0.08
3.2±0.08
0.3 ±0.1
3.2±0.08
4.0±0.1
4.0±0.1
2.0±0.05
φ1.55±0. 1
　　　　　 0
3.5±0.05
1.75±0.1
8.0±0.2
φ1.1±0.1
3.2±0.08
0～0.5
5.5±0.2
(1) (2) (3)
(6) (5) (4)
1/3
2011.05 - Rev.A
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RF04UA2D
　
Electrical characteristics curves
1
10
100
1000
10000
0.001 0.01 0.1 1 10 100 1000
Rth(j-a)
Rth(j-c)
On glass-epoxy board
1ms
IM=10mA I
F
=1A
300
s
time
0
5
10
15
20
25
30
AVE : 21.9kV
C=100pF
R=1.5k
C=200pF
R=0
AVE : 3.9kV
1
10
100
1000
1 10 100
t
Ifsm
1
10
100
1000
1 10 100
8.3ms
Ifsm
1cyc
8.3ms
0
5
10
15
20
25
30
AVE:10.2ns
Tj=25°C
I
F
=0.5A
I
R
=1A
Irr=0.25×I
R
n=10pcs
0
10
20
30
AVE:10.2A
8.3ms
Ifsm
1cyc
0
10
20
30
AVE:10.9pF
Tj=25
°
C
f=1MHz
V
R
=0V
n=10pcs
0.1
1
10
100
1000
830
840
850
860
870
880
1
10
100
0 5 10 15 20 25 30
f=1MHz
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
0
1
10
100
1000
10000
0 50 100 150 200
Tj=25
C
Tj=125
C
Tj=75
C
Tj=150
C
0.01
0.1
1
10
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
FORWARD VOLTAGE : V
F
(V)
V
F
-I
F
CHARACTERISTICS
FORWARD CURRENT : I
F
(A)
REVERSE CURRENT : I
R
(nA)
REVERSE VOLTAGE : V
R
(V)
V
R
-I
R
CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
REVERSE VOLTAGE : V
R
(V)
V
R
-Ct CHARACTERISTICS
V
F
DISPERSION MAP
FORWARD VOLTAGE : V
F
(mV)
REVERSE CURRENT : I
R
(nA)
I
R
DISPERSION MAP
CAPACITANCE BETWEEN TERMINALS :
Ct(pF)
Ct DISPERSION MAP
I
FSM
DISRESION MAP
PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
NUMBER OF CYCLES
I
FSM
-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
TIME : t(ms)
I
FSM
-t CHARACTERISTICS
TIME : t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE : Rth (
C/W)
trr DISPERSION MAP
REVERSE RECOVERY TIME : trr(ns)
Tj=25
C
V
R
=200V
n=30pcs
AVE:1.3nA
AVE : 851.3mV
Tj=25
C
I
F
=0.2A
n=30pcs
Tj=125
C
Tj=25
C
Tj=150
C
Tj=75
C
2/3
2011.05 - Rev.A
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RF04UA2D
　
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0 306090120150
D.C.
D=0.5
D=0.1
D=0.05
half sin wave
D=0.8
D=0.2
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0 306090120150
D.C.
D=0.2
D=0.05
half sin wave
D=0.8
D=0.5
D=0.1
0
0.05
0.1
0.15
0.2
0.25
0 0.05 0.1 0.15 0.2 0.25 0.3 0.35
D.C.
D=0.5
D=0.2
D=0.1
D=0.05
half sin wave
D=0.8
FORWARD POWER
DISSIPATION : Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
AMBIENT TEMPERATURE : Ta(
C)
Derating Curve"(Io-Ta)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
CASE TEMPARATURE : Tc(
C)
Derating Curve(Io-Tc)
T
Tj=150
C
D=t/T
t
V
R
Io
V
R
=200V
0A
0V
T
D=t/T
t
V
R
Io
V
R
=200V
0A
0V
Tj=150
C
3/3
2011.05 - Rev.A
P1-P3P4-P4

RF04UA2DTR

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Rectifiers DIODE SWITCHING 200V 0.4A 6PIN SMD
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