DMS3017SSD-13 Datasheet DMS3017SSD-13 | P4-P6

DMS3017SSD

Document number: DS35052 Rev. 2 - 2

4 of 10

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October 2010

DMS3017SSD

0102015 25 30

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

I , DRAIN-SOURCE CURRENT (A)

D

5

0.05

R

, D

R

AIN-S

O

U

R

C

E

O

N-

R

ESIS

T

AN

C

E ( )

DS(ON)

Ω

0

0.04

0.01

0.02

0.03

V = 4.5V

GS

V = 10V

GS

0 5 10 15 20 25 30

I , DRAIN CURRENT (A)

D

Fig. 4 Typical On-Resistance

vs. Drain Current and Temperature

0

0.01

0.02

0.04

R

, D

R

AI

N

-S

O

U

R

C

E

O

N

-

R

ESIS

T

A

N

C

E ( )

DS(ON)

Ω

0.03

T = 85°C

A

T = 25°C

A

T = -55°C

A

T = 150°C

A

V = 10V

GS

T = 125°C

A

0.5

0.7

0.9

1.1

1.3

1.5

1.7

Fig. 5 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

A

R , DRAIN-SOURCE

ON-RESISTANCE (NORMALIZED)

DSON

V = 4.5V

I = 5A

GS

D

V = 10V

I = 10A

GS

D

0

0.01

0.02

0.03

0.04

0.05

0.06

Fig. 6 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

A

R , DRAIN-SOURCE ON-RESISTANCE ( )

DSON

Ω

V = 4.5V

I = 5A

GS

D

V = 10V

I = 10A

GS

D

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

A

V , GATE THRESHOLD VOLTAGE (V)

GS(TH)

I = 1mA

D

I = 250µA

D

0.2 0.4 0.6 0.8 1.0 1.2

Fig. 8 Diode Forward Voltage vs. Current

V , SOURCE-DRAIN VOLTAGE (V)

SD

0

2

4

6

8

10

12

14

16

18

20

I, S

O

U

R

C

E

C

U

R

E

N

T

(A)

S

T = 25°C

A

DMS3017SSD

Document number: DS35052 Rev. 2 - 2

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www.diodes.com

October 2010

DMS3017SSD

0 5 10 15 20 25 30

Fig. 9 Typical Total Capacitance

V , DRAIN-SOURCE VOLTAGE (V)

DS

10

1,000

C

,

C

A

P

A

C

I

T

AN

C

E (p

F

)

100

C

iss

C

rss

C

oss

f = 1MHz

0 5 10 15 20 25 30

Fig. 10 Typical Leakage Current

vs. Drain-Source Voltage

V , DRAIN-SOURCE VOLTAGE (V)

DS

1

10

100

1,000

10,000

I , LEAKA

G

E

C

U

R

EN

T

(nA)

DSS

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

02 4 6 81012

Fig. 11 Gate-Charge Characteristics

Q , TOTAL GATE CHARGE (nC)

g

0

2

4

6

8

10

V,

G

A

T

E-S

O

U

R

C

E V

O

L

T

A

G

E (V)

GS

V = 15V

I = 10A

DS

D

DMS3017SSD

Document number: DS35052 Rev. 2 - 2

6 of 10

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October 2010

DMS3017SSD

Electrical Characteristics – Q2 @ T

A

= 25°C unless otherwise stated

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BV

DSS

30 - - V

V

GS

= 0V, I

D

= 1mA

Zero Gate Voltage Drain Current

I

DSS

- - 1

μA

V

DS

= 30V, V

GS

= 0V

Gate-Source Leakage

I

GSS

- - ±100 nA

V

GS

= ±20V, V

DS

= 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

V

GS

(

th

)

1.0 - 2.4 V

V

DS

= V

GS

, I

D

= 250μA

Static Drain-Source On-Resistance

R

DS (ON)

-

15

25

22

32

mΩ

V

GS

= 10V, I

D

= 8.8A

V

GS

= 4.5V, I

D

= 7A

Forward Transfer Admittance

|Y

fs

|

- 2.5 - S

V

DS

= 5V, I

D

= 8.8A

Diode Forward Voltage

V

SD

- 0.7 1 V

V

GS

= 0V, I

S

= 1A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

C

iss

- 478.9 -

pF

V

DS

= 15V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

- 96.7 -

Reverse Transfer Capacitance

C

rss

- 61.4 -

Gate Resistance

R

g

- 1.1 -

Ω

V

DS

= 0V, V

GS

= 0V, f = 1MHz

Total Gate Charge (V

GS

= 4.5V) Q

g

- 5.0 -

nC

V

DS

= 15V, V

GS

= 4.5V, I

D

= 10A

Total Gate Charge (V

GS

= 10V) Q

g

- 10.5 -

V

DS

= 15V, V

GS

= 10V, I

D

= 10A

Gate-Source Charge

Q

g

s

- 1.8 -

Gate-Drain Charge

Q

g

d

- 1.6 -

Turn-On Delay Time

t

D

(

on

)

- 2.9 -

ns

V

GS

= 10V, V

DS

= 15V,

R

G

= 3Ω, R

L

= 1.5Ω

Turn-On Rise Time

t

r

- 7.9 -

Turn-Off Delay Time

t

D

(

off

)

- 14.6 -

Turn-Off Fall Time

t

f

- 3.1 -

Notes: 8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to production testing.

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

Fig. 12 Typical Output Characteristic

V , DRAIN-SOURCE VOLTAGE (V)

DS

0

10

15

20

25

30

I, D

R

AIN

C

U

R

EN

T

(A)

D

5

V = 2.5V

GS

V = 3.0V

GS

V = 3.5V

GS

V = 4.5V

GS

V = 4.0V

GS

V = 10V

GS

0

5

10

15

20

0 0.5 1 1.5 2 2.5 3 3.5 4

Fig. 13 Typical Transfer Characteristic

V , GATE-SOURCE VOLTAGE (V)

GS

I, D

R

AIN

C

U

R

EN

T

(A)

D

V = 85°C

GS

V = 125°C

GS

V = 25°C

GS

V = -55°C

GS

V = 150°C

GS

V = 5V

DS

DMS3017SSD-13

DMS3017SSD-13

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