VS-30EPH06PbF, VS-30EPH06-N3
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Vishay Semiconductors
Revision: 09-Jul-15
1
Document Number: 94018
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Hyperfast Rectifier, 30 A FRED Pt
®
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Single diode device
• Designed and qualified according to
JEDEC
®
-JESD 47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in
the AC/DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package TO-247AC modified (2 pins)
I
F(AV)
30 A
V
R
600 V
V
F
at I
F
1.34 V
t
rr
typ. See Recovery table
T
J
max. 175 °C
Diode variation Single die
Base
common
cathode
2
13
Cathode Anode
Available
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage V
RRM
600 V
Average rectified forward current I
F(AV)
T
C
= 116 °C 30
A
Non-repetitive peak surge current I
FSM
T
J
= 25 °C 300
Operating junction and storage temperatures T
J
, T
Stg
-65 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 600 - -
V
Forward voltage V
F
I
F
= 30 A - 2.0 2.6
I
F
= 30 A, T
J
= 150 °C - 1.34 1.75
Reverse leakage current I
R
V
R
= V
R
rated - 0.3 50
μA
T
J
= 150 °C, V
R
= V
R
rated - 60 500
Junction capacitance C
T
V
R
= 600 V - 33 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 3.5 - nH
