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STW13NK80Z

P1-P3P4-P6P7-P9P10-P12P13-P14
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Electrical ratings STW13NK80Z
4/14
1.1 Protection features of gate-to-source zener diodes
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
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STW13NK80Z Electrical characteristics
5/14
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
breakdown voltage
I
D
= 1mA, V
GS
=0 800 V
I
DSS
Zero gate voltage
drain current (V
GS
= 0)
V
DS
= max rating
V
DS
= max rating,
T
C
= 125°C
1
50
µA
µA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 20V ±10 µA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 100µA 3 3.75 4.5 V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 6A 0.53 0.65 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Forward
transconductance
V
DS
= 15V
,
I
D
=6A 11 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25V, f = 1MHz,
V
GS
= 0
3480
312
67
pF
pF
pF
C
oss eq
(2)
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
.
Equivalent output
capacitance
V
GS
= 0V, V
DS
= 0V
to 720V
150 pF
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
= 400V, I
D
= 6A
R
G
=4.7Ω V
GS
= 10V
(see Figure 13)
33
22
95
55
ns
ns
ns
ns
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 640V, I
D
= 12A,
V
GS
= 10V, R
G
=4.7Ω
(see Figure 14)
115
31
51
155 nC
nC
nC
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Electrical characteristics STW13NK80Z
6/14
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
I
SDM
(1)
1. Pulse width limited by safe operating area.
Source-drain current
Source-drain current
(pulsed)
12
48
A
A
V
SD
(2)
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Forward on voltage I
SD
= 12A, V
GS
= 0 1.6 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 12A, di/dt = 100A/µs,
V
DD
= 100V, T
j
= 25°C
(see Figure 15)
632
7.2
26
ns
µC
A
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 12A, di/dt = 100A/µs,
V
DD
= 100V, T
j
= 150°C
(see Figure 15)
805
10
25
ns
µC
A
P1-P3P4-P6P7-P9P10-P12P13-P14

STW13NK80Z

Mfr. #:
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Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 800 Volt 12 Amp
Lifecycle:
New from this manufacturer.
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