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MMSD4148T3G

P1-P3P4-P4
Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 11
1 Publication Order Number:
MMSD4148T1/D
MMSD4148T1G,
SMMSD4148T1G,
MMSD4148T3G,
SMMSD4148T3G
Switching Diode
Features
SOD−123 Surface Mount Package
High Breakdown Voltage
Fast Speed Switching Time
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage V
R
100 V
Peak Forward Current I
F
200 mA
Peak Forward Surge Current t < 1 sec
(Note 1) t = 1 msec
I
FSM
1.0
2.0
A
Operating and Storage Junction Temperature
Range
T
J
, T
stg
−55 to
+150
C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board (Note 2)
T
A
= 25C
Derate above 25C
P
D
425
3.4
mW
mW/C
Thermal Resistance Junction−to−Ambient R
q
JA
290 C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Typical Values
2. FR−5 = 1.0 oz Cu, 1.0 in
z
pad
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
Device Package Shipping
†
ORDERING INFORMATION
SOD−123
CASE 425
STYLE 1
1
CATHODE
2
ANODE
MMSD4148T1G SOD−123
(Pb−Free)
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
5I = Device Code
M = Date Code
G = Pb−Free Package
http://onsemi.com
(Note: Microdot may be in either location)
MMSD4148T3G SOD−123
(Pb−Free)
10,000 /
Tape & Reel
1
5I M G
G
MARKING DIAGRAM
SMMSD4148T1G SOD−123
(Pb−Free)
3,000 /
Tape & Reel
SMMSD4148T3G SOD−123
(Pb−Free)
10,000 /
Tape & Reel
MMSD4148T1G, SMMSD4148T1G, MMSD4148T3G, SMMSD4148T3G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
BR
= 100 mA)
V
(BR)
100 −
V
Reverse Voltage Leakage Current
(V
R
= 20 V)
(V
R
= 75 V)
I
R
−
−
25
5.0
nA
mA
Forward Voltage
(I
F
= 10 mA)
V
F
− 1000
mV
Diode Capacitance
(V
R
= 0 V, f = 1.0 MHz)
C
D
− 4.0
pF
Reverse Recovery Time
(I
F
= I
R
= 10 mA) (Figure 1)
t
rr
− 4.0
ns
1. A 2.0 kW variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
3. t
p
» t
rr
+10 V
2 k
820 W
0.1 mF
DUT
V
R
100 mH
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
t
10%
90%
I
F
I
R
t
rr
t
i
R(REC)
= 1 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; measured
at i
R(REC)
= 1 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
MMSD4148T1G, SMMSD4148T1G, MMSD4148T3G, SMMSD4148T3G
http://onsemi.com
3
I
R
, REVERSE CURRENT (A)
100
0.2 0.4
V
F
, FORWARD VOLTAGE (VOLTS)
0.6 0.8 1.0
1.2
10
1.0
0.1
T
A
= 85C
10
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10 20 30 40 50
0.68
0
V
R
, REVERSE VOLTAGE (VOLTS)
0.64
0.60
0.56
0.52
C
D
, DIODE CAPACITANCE (pF)
246 8
I
F
, FORWARD CURRENT (mA)
T
A
= 25C
T
A
= -40C
T
A
= 150C
T
A
= 125C
T
A
= 85C
T
A
= 55C
T
A
= 25C
Figure 2. Forward Voltage Figure 3. Leakage Current
Figure 4. Capacitance
P1-P3P4-P4

MMSD4148T3G

Mfr. #:
Buy MMSD4148T3G
Manufacturer:
ON Semiconductor
Description:
Diodes - General Purpose, Power, Switching S SWCH DIO 100V
Lifecycle:
New from this manufacturer.
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