Document Number: 67468
S13-1614-Rev. C, 29-Jul-13
www.vishay.com
5
Vishay Siliconix
Si1034CX
This document is subject to change without notice.
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67468
.
Safe Operating Area, Junction-to-Ambient
0.01
0.1
1
10
0.1 1 10 100
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
100 ms
Limited by R
DS(on)
*
1 ms
T
C
= 25 °C
Single Pulse
10 ms
100 μs
1 s
10 s, DC
BVDSS Limited
Power Derating, Junction-to-Ambient
0
0.06
0.12
0.18
0.24
0 255075100125150
Power (W)
T
A
- Ambient Temperature (°C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
