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FERD20U60DJF-TR

P1-P3P4-P6P7-P8
This is information on a product in full production.
June 2014 DocID025986 Rev 2 1/8
FERD20U60
Field effect rectifier
Datasheet
−
production data
Features
• ST proprietary process
• Stable leakage current over reverse voltage
• Low forward voltage drop
• High frequency operation
Description
This single rectifier is based on a proprietary
technology, enabling to achieve the best in class
V
F
/I
R
trade-off for a given silicon surface.
Packaged in PowerFLAT™ 5x6, this device is
intended to be used in rectification and
freewheeling operations in switch-mode power
supplies.
TM: PowerFLAT is a trademark of STMicroelectronics
K
A
A
A
A
K
K
A
A
PowerFLAT 5x6
FERD20U60DJF
Table 1. Device summary
Symbol Value
I
F(AV)
20 A
V
RRM
60 V
T
j (max)
+150 °C
V
F
(typ) 350 mV
www.st.com
Characteristics FERD20U60
2/8 DocID025986 Rev 2
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.295 x I
F(AV)
+ 0.0105 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values, at 25 °C, unless otherwise specified anode terminals
short-circuited)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 60 V
I
F(RMS)
Forward rms current 45 A
I
F(AV)
Average forward current, δ = 0.5 T
c
= 115 °C 20 A
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 180 A
T
stg
Storage temperature range -65 to + 175 °C
T
j
(1)
Maximum operating junction temperature 150 °C
1. condition to avoid thermal runaway for a diode on its own heatsink
dPtot
dTj
<
1
Rth(j-a)
Table 3. Thermal resistance
Symbol Parameter Value (max) Unit
R
th(j-c)
Junction to case 2.6 °C/W
Table 4. Static electrical characteristics (anode terminals short-circuited)
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
800 µA
T
j
= 125 °C 30 70 mA
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 10 A
0.380 0.425
V
T
j
= 125 °C 0.350 0.400
T
j
= 25 °C
I
F
= 20 A
0.465 0.510
T
j
= 125 °C 0.465 0.505
1. Pulse test: t
p
= 5 ms, δ < 2%
2. Pulse test: t
p
= 380 µs, δ < 2%
DocID025986 Rev 2 3/8
FERD20U60 Characteristics
8
Figure 1. Average forward power dissipation
versus average forward current
Figure 2. Average forward current versus
ambient temperature (δ = 0.5)
P
F(AV)
(W)
0
2
4
6
8
10
12
14
16
0 2 4 6 8 10 12 14 16 18 20 22 24 26
d = 0.05
d = 0.1
d = 1
d = 0.2
d = 0.5
I (A)
F(AV)
T
d
=tp/T
tp
I
F(AV)
(A)
0
5
10
15
20
25
30
35
0 25 50 75 100 125 150
R
th(j
-a)
= R
th(j
-c)
T (°C)
amb
T
d
=tp/T
tp
Figure 3. Relative variation of thermal
impedance junction to case versus pulse
duration
Figure 4. Reverse leakage current versus
reverse voltage applied (typical values)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
t
p
(s)
Single pulse
Z
th(j-c)
/R
th(j-c)
I
R
(A)m
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
0 5 10 15 20 25 30 35 40 45 50 55 60
T
j
= 125 °C
T
j
= 50 °C
T
j
= 75 °C
T
j
= 100 °C
V
R
(V)
T
j
= 25 °C
Figure 5. Junction capacitance versus reverse
voltage applied (typical values)
Figure 6. Forward voltage drop versus forward
current (typical values)
C(pF)
100
1000
10000
1 10 100
V
R
(V)
F = 1 MHz
V
osc
= 30 mV
RMS
T
j
= 25 °C
I
F
(A)
0.1
1.0
10.0
100.0
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50
V
F
(V)
T
j
= 25 °C
T
j
= 125 °C
T
j
= 75 °C
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FERD20U60DJF-TR

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Manufacturer:
STMicroelectronics
Description:
Rectifiers Field Effect Rectifier
Lifecycle:
New from this manufacturer.
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