SSM3K37CT,L3F Datasheet SSM3K37CT,L3F | P1-P3

SSM3K37CT

2014-03-01

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K37CT

○ High Speed Switching Applications

○ Analog Switch Applications

• 1.5Vdrive

• Low ON-resistance R

DS(ON)

= 5.60 Ω (max) (@V

GS

= 1.5 V)

R

DS(ON)

= 4.05 Ω (max) (@V

GS

= 1.8 V)

R

DS(ON)

= 3.02 Ω (max) (@V

GS

= 2.5 V)

R

DS(ON)

= 2.20 Ω (max) (@V

GS

= 4.5 V)

Absolute Maximum Ratings

(Ta

=

25°C)

Characteristics Symbol Rating Unit

Drain-Source voltage V

DSS

20 V

Gate-Source voltage V

GSS

± 10 V

DC I

D

200

Drain current

Pulse I

DP

400

mA

Power dissipation P

D

(Note1) 100 mW

Channel temperature T

ch

150 °C

Storage temperature range T

stg

−55 to 150 °C

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note 1: Mounted on FR4 board

(10 mm × 10 mm × 1.0 mm, Cu Pad: 100 mm

2

)

Marking(top view) Pin Condition (top view) Equivalent Circuit

Unit : mm

JEDEC ―

JEITA ―

TOSHIBA 2-1J1B

Weight: 0.75mg(typ.)

1. Gate

2. Source

3. Drain

*Electrodes: On the bottom

Polarity mark

Polarity mark (on the top)

1

2

3

SU

1

2

3

CST3

Start of commercial production

2010-11

SSM3K37CT

2014-03-01

2

Electrical Characteristics (Ta

=

25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

V

(BR) DSS

I

D

= 1 mA, V

GS

= 0 V 20 ⎯ ⎯

Drain-source breakdown voltage

V

(BR) DSX

I

D

= 1 mA, V

GS

= -10 V 12 ⎯ ⎯

V

Drain cut-off current I

DSS

V

DS

= 20 V, V

GS

= 0 V ⎯ ⎯ 1 μA

Gate leakage current I

GSS

V

GS

= ±10 V, V

DS

= 0 V ⎯ ⎯ ±1 μA

Gate threshold voltage V

th

V

DS

= 3 V, I

D

= 1 mA 0.35 ⎯ 1.0 V

Forward transfer admittance |Y

fs

| V

DS

= 3 V, I

D

= 100 mA (Note2) 0.14 0.28 ⎯ S

I

D

= 100 mA, V

GS

= 4.5 V (Note2) ⎯ 1.65 2.20

I

D

= 50 mA, V

GS

= 2.5 V (Note2) ⎯ 2.16 3.02

I

D

= 20 mA, V

GS

= 1.8 V (Note2) ⎯ 2.66 4.05

Drain-source ON-resistance R

DS (ON)

I

D

= 10 mA, V

GS

= 1.5 V (Note2) ⎯ 3.07 5.60

Ω

Input capacitance C

iss

⎯ 12 ⎯

Output capacitance C

oss

⎯ 5.5 ⎯

Reverse transfer capacitance C

rss

V

DS

= 10 V, V

GS

= 0 V, f = 1 MHz

⎯ 4.1 ⎯

pF

Turn-on time t

on

⎯ 18 ⎯

Switching time

Turn-off time t

off

V

DD

= 10 V, I

D

= 100 mA

V

GS

= 0 to 2.5 V, R

G

= 50 Ω

⎯ 36 ⎯

ns

Drain-Source forward voltage V

DSF

I

D

= -200 mA, V

GS

= 0 V (Note2)

⎯

-0.89 -1.2 V

Note2: Pulse test

Switching Time Test Circuit

Precaution

Let V

th

be the voltage applied between gate and source that causes the drain current (I

D

)

to be low (1mA for the

SSM3K37CT). Then, for normal switching operation, V

GS(on)

must be higher than V

th,

and V

GS(off)

must be lower than

V

th.

This relationship can be expressed as: V

GS(off)

< V

th

< V

GS(on).

Take this into consideration when using the device.

Handling Precaution

When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is

protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that

come into direct contact with devices should be made of antistatic materials.

Thermal resistance R

th (ch-a)

and power dissipation P

D

vary depending on board material, board area, board thickness

and pad area. When using this device, please take heat dissipation into consideration

2.5 V

t

on

t

off

0 V

V

DD

V

DS (ON)

t

r

t

f

10%

90%

10%

(a) Test Circuit

V

DD

= 10 V

R

G

= 50Ω

Duty ≤ 1%

V

IN

: t

r

, t

f

< 5 ns

Common source

Ta = 25°C

0 V

2.5 V

IN

OUT

V

DD

10 μs

R

G

(b) V

IN

(c) V

OUT

SSM3K37CT

2014-03-01

3

R

DS (ON)

– Ta

−50 0 50 150 100

Common source

Pulse test

I

D

= 10 mA / V

GS

= 1.5 V

20 mA / 1.8 V

100 mA / 4.5 V

50 mA / 2.5 V

0

4

2

5

1

3

V

th

– Ta

1.0

0

−50 0 15050 100

0.5

Common source

V

DS

= 3 V

I

D

= 1 mA

R

DS (ON)

– I

D

0 200 300 400 500100

0

4

6

2

5

1

3

V

GS

= 4.5Ｖ

1.5 V

1.8 V

Common source

Ta = 25°C

Pulse test

2.5V

I

D

– V

GS

1000

0

10

100

0.1

1

0.01

3.0 1.0 2.0

− 25 °C

Ta = 100 °C

25 °C

Common source

V

DS

= 3 V

Pulse test

I

D

– V

DS

0

400

0

0.2 0.4 0.6

300

100

500

0.8 1.0

200

V

GS

= 1.2 V

10 V

Common source

Ta = 25 °C

Pulse test

4.5 V

1.8 V

2.5 V

1.5 V

0

4

0

R

DS (ON)

– V

GS

4

6

2

8 2 6 10

I

D

= 100 mA

Common source

Pulse test

5

1

3

− 25 °C

Ta = 100 °C

25 °C

Drain-source voltage V

DS

(V)

Drain current I

D

(mA)

Drain current I

D

(mA)

Gate-source voltage V

GS

(V)

Gate-source voltage V

GS

(V)

Drain-source ON-resistance

R

DS (ON)

(Ω)

Drain-source ON-resistance

R

DS (ON)

(Ω)

Drain current I

D

(mA)

Ambient temperature Ta (°C)

Drain-source ON-resistance

R

DS (ON)

(Ω)

Ambient temperature Ta (°C)

Gate threshold voltage V

th

(V)

SSM3K37CT,L3F

SSM3K37CT,L3F

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