BAP70Q All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 6 March 2012 2 of 13
NXP Semiconductors
BAP70Q
Quad PIN diode attenuator
4. Marking
5. Limiting values
[1] single diode.
6. Thermal characteristics
7. Characteristics
Table 3. Marking
Type number Marking code
BAP70Q A2
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
reverse voltage
[1]
-50V
I
F
forward current
[1]
-100mA
P
tot
total power dissipation T
sp
=90C
[1]
-125mW
T
stg
storage temperature 65 +150 C
T
j
junction temperature 65 +150 C
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-sp)
thermal resistance from junction to solder point 350 K/W
Table 6. Characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
V
F
forward voltage I
F
= 50 mA - 0.95 1.1 V
I
R
reverse current V
R
=50V - - 100 nA
C
d
diode capacitance see Figure 1; f = 1 MHz;
V
R
= 0 V - 600 - fF
V
R
= 1 V - 430 - fF
V
R
= 20 V - 250 300 fF
r
D
diode forward resistance see Figure 2; f = 100 MHz;
I
F
=0.5mA - 77 100
I
F
=1mA - 40 50
I
F
=10mA - 5.4 7
I
F
=100mA - 1.4 1.9
L
charge carrier life time when switched from
I
F
=10mAtoI
R
=6mA;
R
L
=100; measured at I
R
=3mA
-1.25- s
