OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

DG3257DN-T1-GE4

P1-P3P4-P6P7-P9
DG3257
www.vishay.com
Vishay Siliconix
S17-0438-Rev. B, 20-Mar-17
1
Document Number: 75945
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
700 MHz, -3 dB Bandwidth; Single SPDT Analog Switch
DESCRIPTION
DG3257 is a low R
ON
, high bandwidth analog switch
configured in single SPDT. It achieves 5 switch on
resistance, greater than 700 MHz -3 dB bandwidth with 5 pF
load, and a channel to channel crosstalk at -32 dB and
isolation at -33 dB. Fabricated with high density sub micro
CMOS process, the DG3257 provides low parasitic
capacitance, handles bidirectional signal flow with
minimized phase distortion. Guaranteed 1.4 V logic high
threshold makes it possible to interface directly with low
voltage MCUs.
The DG3257 is designed for a wide range of operating
voltages from 1.65 V to 5.5 V that can be driven directly
from one cell Li-ion battery. On-chip protection circuit
protects again fault events when V+ goes zero. Latch up
current is 300 mA, as per JESD78, and its ESD tolerance
exceeds 6 kV.
Packaged in ultra small μDFN6L (1 mm x 1 mm), it is ideal
for portable high speed mix signal switching application.
As a committed partner to the community and the
environment, Vishay Siliconix manufactures this product
with lead (Pb)-free device termination.
The μDFN6L package has a nickel-palladium-gold
device termination and is represented by the lead (Pb)-free
“-GE4” suffix to the ordering part number. The
nickel-palladium-gold device terminations meet all
JEDEC
®
standards for reflow and MSL rating. As a further
sign of Vishay Siliconix's commitment, the DG3257 is fully
RoHS-complaint.
FEATURES
• 1.65 V to 5.5 V single supply operation
• Low resistance: 5 /typ. at 4.2 V
• Switch ON capacitance: 9 pF typical
• -3 dB bandwidth: 700 MHz
• Power down protection
• Signal swing over V+ capable (when signal swing over V+,
signal pin current: typically (V
S
- 0.6 V)/120 )
• Control logic S pin voltage can go beyond V+
• Break before make switching
• Latch up current: 300 mA (JESD78)
•ESD / HBM: 6 kV,
•ESD / CDM: 1 kV
• TTL/CMOS compatible
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Smart phones
• Tablet, e-readers
• Camera, audio devices
• Computer and peripherals
• Data storage
•IoT
• Wearable
• Portable healthcare
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
ORDERING INFORMATION
TEMP. RANGE PACKAGE PART NUMBER
-40 °C to +85 °C μDFN-6L DG3257DN-T1-GE4
Pin 1
Device marking: Bx for DG3257
x = Date / Lot traceability code
Bx
NO 1 6
25
34
IN
GND V+
NC COM
Top view
μDFN-6L 1 x 1
DG3257
www.vishay.com
Vishay Siliconix
S17-0438-Rev. B, 20-Mar-17
2
Document Number: 75945
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TRUTH TABLE
IN NC NO
0ONOFF
1OFFON
PIN DESCRIPTIONS
PIN NAME DESCRIPTION
IN Logic select Input
V+ Power pin
GND Power ground pin
NC Normal close data port
NO Normal open data port
COM Common data port
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER CONDITIONS LIMITS UNIT
V+, S Reference to GND -0.3 to +6
V
COM, NO, NC Reference to GND -0.3 to +6
Maximum continuous switch current ± 50
mA
Maximum pulse switch current Pulsed at 1 ms, 10 % duty cycle ± 100
Thermal resistance 407 °C/W
ESD / HBM EIA / JESD22-A114-A 6000
V
ESD / CDM EIA /JESD22-C101A 1000
Temperature
Operating temperature -40 to +85
°C
Max. operating junction temperature 150
Operating junction temperature 125
Storage temperature -65 to +150
SPECIFICATIONS
PARAMETER SYMBOL
TEST CONDITIONS
V+ = 3 V, V
INH
= 1.3 V, V
INL
= 0.5 V
OTHERWISE UNLESS SPECIFIED
+25 °C
-40 °C to
+85 °C
TYP.
a
/
MAX.
UNIT
Analog Switch
Analog signal range V
ANALOG
0 to 5.5 V
Drain-source on-resistance R
DS(on)
V+ = 1.8 V, V
NC/NO
= 0 V to V+, I
S±
= 8 mA
28 - Typ.
47 54 Max.
V+ = 3 V, V
NC/NO
= 0.4 V, I
S±
= 8 mA
7-Typ.
89Max.
V+ = 3.6 V, V
NC/NO
= 0.4 V, I
S±
= 8 mA
6-Typ.
78Max.
V+ = 4.2 V, V
NC/NO
= 0.4 V, I
S±
= 8 mA
5-Typ.
67Max.
V+ = 5 V, V
NC/NO
= 0.4 V, I
S±
= 8 mA
5-Typ.
5.5 6 Max.
On-resistance flatness R
flat(on)
V+ = 3 V, V
NC/NO
= 0 V, 1 V, I
S±
= 8 mA
2-Typ.
36Max.
On-resistance matching R
DS(on)
V+ = 2.7 V to 5.5 V, V
S
= 0 V to V+, I
S±
= 8 mA
0.4 - Typ.
0.6 0.8 Max.
Switch off leakage current I
S
/I
d(off)
V+ = 5.5 V, V
COM
= 1 V / 4.5 V,
V
NC/NO
= 4.5 V / 1 V
± 0.2 - Typ.
nA
-± 20Max.
Channel on leakage current I
d(on)
V+ = 5.5 V, V
COM
= 1 V / 4.5 V,
V
NC/NO
= open
± 0.2 - Typ.
-± 20Max.
Power down leakage I
COM(PD)
V+ = 0 V, V
COM
= 4.5 V 1 - Max. μA
DG3257
www.vishay.com
Vishay Siliconix
S17-0438-Rev. B, 20-Mar-17
3
Document Number: 75945
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Typical values are for design aid only, not guaranteed nor subject to production testing.
b. Guarantee by design, not subjected to production test.
Digital Control
Input voltage high V
INH
V+ = 3 V - 1.2 Min.
V
V+ = 5 V - 1.4 Min.
Input voltage low V
INL
V+ = 3 V - 0.45 Max.
V+ = 5 V - 0.5 Max.
Input leakage I
IN
V+ = 0 V, 5.5 V, V
IN
= V
GND
or V+
0.001 - Typ.
μA
-0.23Max.
Digital input capacitance C
IN
5.6 - Typ. pF
Dynamic Characteristics
Break-before-make-time t
OPEN
V
NO
= V
NC
= 1.5 V; R
L
= 300 , C
L
= 35 pF
6-Typ.
ns
-2Min.
Turn-on time t
ON
V
NC
= V
NO
= V+; R
L
= 50 , C
L
= 35 pF
17 - Typ.
40 50 Max.
Turn-off time t
OFF
9-Typ.
35 45 Max.
Propagation delay
b
t
PD
100 - Typ. ps
Charge injection
b
Q
INJ
C
L
= 1 nF, R
GEN
= 0 , V
COM
= 1.5 V 4 - Typ. pC
Off-isolation
b
OIRR
R
L
= 50 , C
L
= 5 pF, f = 240 MHz
-33 - Typ.
dBCrosstalk
b
X
TALK
-32 - Typ.
Insertion loss
b
R
L
= 50 , C
L
= 5 pF, f = 1 MHz -0.62 - Typ.
Total harmonic distortion
+ Noise
b
THD + N R
L
= 600 , V
PP
= 0.5 V
p-p
, f = 20 Hz to 20 kHz 0.025 - Typ. %
Bandwidth, -3 dB
b
BW R
L
= 50 , C
L
= 5 pF 714 - Typ. MHz
Source off capacitance
b
C
S (off)
f = 240 MHz
3-Typ.
pF
Drain on capacitance
b
C
D(on)
9-Typ.
Power Requirements
Power supply range GND = 0 V +1.65 / +5.5 min. / max. V
Power supply current I+
Digital Inputs 0 V or V+, V+ = 2.7 V to 5.5 V
0.001 - Typ.
μA
-0.4Max.
Digital inputs 1.8 V, V+ = 3 V
1-Typ.
-1.5Max.
SPECIFICATIONS
PARAMETER SYMBOL
TEST CONDITIONS
V+ = 3 V, V
INH
= 1.3 V, V
INL
= 0.5 V
OTHERWISE UNLESS SPECIFIED
+25 °C
-40 °C to
+85 °C
TYP.
a
/
MAX.
UNIT
P1-P3P4-P6P7-P9

DG3257DN-T1-GE4

Mfr. #:
Buy DG3257DN-T1-GE4
Manufacturer:
Vishay / Siliconix
Description:
Analog Switch ICs SPDT 700MHz -3dB 1.65 to 5.5V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet