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STB11NK40ZT4

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
April 2009 Doc ID 8936 Rev 7 1/17
17
STB11NK40Z, STP11NK40ZFP
STP11NK40Z
N-channel 400 V, 0.49 Ω, 9 A, TO-220, TO-220FP, D
2
PA K
Zener-protected SuperMESH
TM
Power MOSFET
Features
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatability
Applications
■ Switching application
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Figure 1. Internal schematic diagram
Type V
DSS
R
DS(on)
I
D
Pw
STB11NK40Z 400V <0.55Ω 10A 110W
STP11NK40Z 400V <0.55Ω 10A 110W
STP11NK40ZFP 400V <0.55Ω 10A 30W
1
2
3
1
2
3
1
3
TO-220FP
TO-220
D
2
PAK
Table 1. Device summary
Order code Marking Package Packaging
STB11NK40ZT4 B11NK40Z D²PAK Tape and reel
STP11NK40Z P11NK40Z TO-220 Tube
STP11NK40ZFP P11NK40ZFP TO-220FP Tube
www.st.com
Contents STB11NK40Z, STP11NK40ZFP, STP11NK40Z
2/17 Doc ID 8936 Rev 7
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
STB11NK40Z, STP11NK40ZFP, STP11NK40Z Electrical ratings
Doc ID 8936 Rev 7 3/17
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220/D²PAK TO-220FP
V
DS
Drain-source voltage (V
GS
= 0) 400 V
V
DGR
Drain-gate voltage (R
GS
= 20KΩ) 400 V
V
GS
Gate-source voltage ± 30 V
I
D
Drain current (continuous) at T
C
= 25°C 9 9
(1)
1. Limited only by maximum temperature allowed
A
I
D
Drain current (continuous) at T
C
=100°C 5.67 5.67
(1)
A
I
DM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 36 36
(1)
A
P
TOT
Total dissipation at T
C
= 25°C 110 30 W
Derating factor 0.88 0.24 W/°C
V
ESD(G-S)
Gate source ESD (HBM-C= 100pF,
R= 1.5kΩ)
3500 V
dv/dt
(3)
3. I
SD
≤ 9A, di/dt ≤ 200 A/µs, V
DD
≤ V
(BR)DSS
, T
j
≤ T
JMAX
.
Peak diode recovery voltage slope 4.5 V/ns
V
ISO
Insulation withstand voltage (DC) -- 2500 V
T
J
T
stg
Operating junction temperature
Storage temperature
-55 to 150 °C
Table 3. Thermal data
Symbol Parameter
Value
Unit
TO-220/D²PAK TO-220FP
R
thj-case
Thermal resistance junction-case max 1.14 4.2 °C/W
R
thj-a
Thermal resistance junction-ambient max 62.5 °C/W
T
l
Maximum lead temperature for soldering
purpose
300 °C
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

STB11NK40ZT4

Mfr. #:
Buy STB11NK40ZT4
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 400 Volt 9 Amp Zener SuperMESH
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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