H11AG2 Datasheet H11AG1, H11AG2S, H11AG3SD | P1-P3

DESCRIPTION

The H11AG series consists of a Gallium-Aluminum-

Arsenide IRED emitting diode coupled with a silicon

phototransistor in a dual in-line package. This device

provides the unique feature of the high current transfer

ratio at both low output voltage and low input current.

This makes it ideal for use in low power logic circuits,

telecommunications equipment and portable electronics

isolation applications.

PHOTOTRANSISTOR OPTOCOUPLERS

H11AG1 H11AG2 H11AG3

APPLICATIONS

• CMOS driven solid state reliability

• Telephone ring detector

• Digital logic isolation

FEATURES

• High efficiency low degradation liquid epitaxial IRED

• Logic level compatible, input and output currents, with

CMOS and LS/TTL

• High DC current transfer ratio at low input currents

• Underwriters Laboratory (UL) recognized File #E90700

6

1

6

1

6

1

2

6

5COL

4 EMITTER

BASE

ANODE

CATHODE

N/C

3

SCHEMATIC

Parameters Symbol Device Value Units

TOTAL DEVICE

T

STG

All -55 to +150 °C

Storage Temperature

Operating Temperature T

OPR

All -55 to +100 °C

Lead Solder Temperature T

SOL

All 260 for 10 sec °C

Total Device Power Dissipation @ 25°C (LED plus detector)

P

D

All

260 mW

Derate Linearly From 25°C 3.5 mW/°C

EMITTER

I

F

All 50 mA

Continuous Forward Current

Reverse Voltage V

R

All 6 V

Forward Current - Peak (1 µs pulse, 300 pps) I

F

(pk) All 3.0 A

LED Power Dissipation 25°C Ambient

P

D

All

75 mW

Derate Linearly From 25°C 1.0 mW/°C

DETECTOR

Detector Power Dissipation @ 25°C

P

D

All

150 mW

Derate Linearly from 25°C 2.0 mW/°C

Continuous Collector Current All 50 mA



2001 Fairchild Semiconductor Corporation

DS300213 1/28/02 1 OF 8 www.fairchildsemi.com

ABSOLUTE MAXIMUM RATINGS

Parameters Test Conditions Symbol Device Min Typ Max Units

EMITTER

Input Forward Voltage I

F

= 1 mA

V

F

All

1.5 V

Reverse Leakage Current

V

R

= 5 V, T

A

= 25°C

I

R

All 10 µA

V

R

= 5 V, T

A

= 70°C

I

R

All 100 µA

Capacitance V = 0, f = 1.0 MHz

C

J

All 100 pF

DETECTOR

Breakdown Voltage

Collector to Emitter I

C

= 1.0 mA, I

F

= 0 BV

CEO

All 30

V

Collector to Base I

C

= 100 µA, I

F

= 0 BV

CBO

All 70 V

Emitter to Collector I

C

= 100 µA, I

F

= 0 BV

ECO

All 7 V

Leakage Current

Collector to Emitter V

CE

= 10 V, I

F

= 0 I

CEO

All 5 10

µA

Capacitance

V

CE

= 10 V, f = 1 MHz C

CE

All 2

pF

INDIVIDUAL COMPONENT CHARACTERISTICS

ELECTRICAL CHARACTERISTICS

(T

A

= 0-70

°C

Unless otherwise specified.)

DC Characteristics Test Conditions Symbol Device Min Typ Max Units

H11AG1 300

I

F

= 1 mA, V

CE

= 5 V CTR H11AG2 200

H11AG3 100

H11AG1 100

Current Transfer Ratio

I

F

= 1 mA, V

CE

= 0.6 V CTR

H11AG2 50

%

H11AG3 20

I

F

= 0.2 mA, V

CE

= 1.5 V CTR

H11AG1 100

H11AG2 50

Saturation Voltage

I

F

= 2.0 mA, I

C

= 0.5 mA

V

CE(SAT)

All .40 V

AC Characteristics Test Conditions Symbol Device Min Typ Max Units

Non-Saturated Switching Times

Turn-On Time R

L

= 100 Ω, I

F

= 1 mA, V

CC

= 5 V

t

on

All 5 µS

Turn-Off Time R

L

= 100 Ω, I

F

= 1 mA, V

CC

= 5 V

t

off

All 5 µS

TRANSFER CHARACTERISTICS

(T

A

= 25°C Unless otherwise specified.)

www.fairchildsemi.com 2 OF 8 1/28/02 DS300213

Parameters Test Conditions Symbol Min Typ Max Units

Input-Output Isolation Voltage I

I-0

≤ 1 µA, t = 1 min. V

ISO

5300 Vac(rms)

ISOLATION CHARACTERISTICS

PHOTOTRANSISTOR OPTOCOUPLERS

H11AG1 H11AG2 H11AG3

DS300213 1/28/02 3 OF 8 www.fairchildsemi.com

Figure 1. LED Forward Voltage vs. Forward Current

I

F

- LED FORWARD CURRENT (mA)

0.1 1 10 100

V

F

-

F

O

R

W

A

R

D

V

O

L

T

A

G

E

(

V

)

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Figure 2. Normalized Current Transfer Ratio vs. Forward Current

I

F

- FORWARD CURRENT - mA

0.1 1 10 100

N

O

R

M

A

L

I

Z

E

D

C

T

R

C

E

0.2

0.4

0.6

0.8

1.0

1.2

Figure 3. Normalized CTR vs. Temperature

T

A

- AMBIENT TEMPERATURE -

o

C

-60 -40 -20 0 20 40 60 80 100

N

O

R

M

A

L

I

Z

E

D

C

T

R

C

E

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

T

A

o

C

= 25

T

A

= -55

o

C

T

A

= 100

o

C

NORMALIZED TO:

I

F

= 5mA

V

CE

= 5V

T

A

= 25

o

C

NORMALIZED TO:

I

F

= 5mA

V

CE

= 5V

T

A

= 25

o

C

Figure 4. Normalized Collector vs. Collector - Emitter Voltage

V

CE

- COLLECTOR - EMITTER VOLTAGE - V

0.1 1 10

N

O

R

M

A

L

I

Z

E

D

I

C

E

-

C

O

L

E

C

T

O

R

-

E

M

I

T

E

R

C

U

R

E

N

T

0.0001

0.001

0.01

0.1

1

10

NORMALIZED TO:

I

F

= 5mA

V

CE

= 5V

T

A

= 25

o

C

I

F

= 0.2mA

I

F

= 0.5mA

I

F

= 1mA

I

F

= 2mA

I

F

= 5mA

I

F

= 10mA

I

F

= 2mA

I

F

= 5mA

I

F

= 10mA

I

F

= 0.2mA

I

F

= 0.5mA

I

F

= 1mA

PHOTOTRANSISTOR OPTOCOUPLERS

H11AG1 H11AG2 H11AG3

H11AG2

H11AG2

Products related to this Datasheet