PSMN014-40YS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 25 October 2010 3 of 15
NXP Semiconductors
PSMN014-40YS
N-channel LFPAK 40 V, 14 mΩ standard level MOSFET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - 40 V
V
DGR
drain-gate voltage T
j
≥ 25 °C; T
j
≤ 175 °C; R
GS
=20kΩ -40V
V
GS
gate-source voltage -20 20 V
I
D
drain current V
GS
=10V; T
mb
= 100 °C; see Figure 1 -32A
V
GS
=10V; T
mb
=25°C; see Figure 1 -46A
I
DM
peak drain current pulsed; t
p
≤ 10 µs; T
mb
=25°C; see Figure 3 - 183 A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 -56W
T
stg
storage temperature -55 175 °C
T
j
junction temperature -55 175 °C
T
sld(M)
peak soldering temperature - 260 °C
Source-drain diode
I
S
source current T
mb
=25°C - 46 A
I
SM
peak source current pulsed; t
p
≤ 10 µs; T
mb
= 25 °C - 183 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
V
GS
=10V; T
j(init)
=25°C; I
D
=46A;
V
sup
≤ 40 V; unclamped; R
GS
=50Ω
-21mJ
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aad331
0
10
20
30
40
50
0 50 100 150 200
T
mb
(
°
C)
I
D
(A)
T
mb
(°C)
0 20015050 100
03aa16
40
80
120
P
der
(%)
0
