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IRSF3010S

P1-P3P4-P6P7-P9P10-P11
Features:
n Extremely Rugged for Harsh Operating
Environments
n Over Temperature Protection
n Over Current Protection
n Active Drain to Source Clamp
n ESD Protection
n Compatible with standard POWER
MOSFET
n Low Operating Input Current
n Monolithic Construction
n Dual set/reset Threshold Input
IRSF3010
Available PackagesIRSF3010 - Block Diagram
V
ds(clamp)
50 V
R
ds(on)
80 m
ΩΩ
ΩΩ
Ω
I
ds(sd)
11 A
T
j(sd)
155 °C
E
AS
400 mJ
Source
Drain
Applications:
n DC Motor Drive
n Solenoid Driver
FULLY PROTECTED POWER MOSFET SWITCH
Pin Assignment
Pin 1 - Input
Pin 2 - Drain
Pin 3 - Source
Tab - Drain
Provisional Data Sheet No.PD-6.0027A
3
2
1
Tab
IRSF3010
IRSF3010S
Rating Summary:General Description:
The IRSF3010 is a three terminal monolithic
SMART POWER MOSFET with built in short cir-
cuit, over-temperature, ESD and over-voltage pro-
tections.
The on chip protection circuit latches off the
POWER MOSFET in case the drain current ex-
ceeds 14A (typical) or the junction temperature ex-
ceeds 165°C (typical) and keeps it off until the
input is driven low. The drain to source voltage
is actively clamped at 55V (typical), prior to the
avalanche of POWER MOSFET, thus improving
its performance during turn off with inductive
loads.
The input current requirements are very low
(300uA) which makes the IRSF3010 compatible with
most existing designs based on standard
POWER MOSFETs.
IRSF3010
2
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. (T
c
=
25°C unless otherwise specified.)
Symbol Parameter Definition Min. Max. Test Conditions
V
ds, max
Continuous Drain to Source Voltage — 50
V
in, max
Continuous Input Voltage -0.3 10
I
ds
Continuous Drain Current — self limited
P
d
Power Dissipation — 40 W T
c
≤ 25°C
Linear Derating Factor for Tc > 25°C — 0.33 W/°C
E
AS
Unclamped Single Pulse Inductive Energy — 400 mJ
V
esd1
Electrostatic Discharge Voltage (Human Body Model) — 4000 1000pF. 1.5kΩ
V
esd2
(Machine Model) — 1000 200pF, 0Ω
T
Jop
Junction Temperature -55
self-limited
T
Stg
Storage Temperature -55 175
T
L
Lead Temperature (Soldering, 10 seconds) — 300
Thermal Characteristics
Units
V
V
o
C
Symbol Parameter Definition Min. Typ. Max. Units Test Conditions
V
ds,clamp
Drain to Source Clamp Voltage 50 54 — I
ds
= 10mA
—5662 I
ds
= 11A, t
p
= 700 µS
R
ds(on)
Drain to Source On Resistance — 70 80 V
in
= 5V, I
ds
= 4A
—85— V
in
= 4V, I
ds
= 4A
—53— V
in
= 10V, I
ds
= 4A
I
dss
Drain to Source Leakage Current — — 10 V
ds
= 12V, V
in
= 0V
— — 100 V
ds
= 50V, V
in
= 0V
— 10 250 V
ds
=40V,V
in
=0V,T
c
=150
o
C
V
th
Input Threshold Voltage 1.5 2.0 2.5 V V
ds
= 5V, I
ds
= 1mA
I
i, on
Input Supply Current (Normal Operation) — 0.25 0.6 V
in
= 5V
— 0.35 0.85 V
in
= 10V
I
i, off
Input Supply Current (Protection Mode) — 0.5 1.0 V
in
= 5V
—0.61.2 V
in
= 10V
V
in, clamp
Input Clamp Voltage 10 10.8 — I
in
= 10mA
V
sd
Body-Drain Diode Forward Drop ➁ — 1.2 1.5 I
ds
= -17A, R
in
= 1k
Ω
Static Electrical Characteristics
(T
c
= 25°C unless otherwise specified.)
V
mΩ
µA
mA
V
Symbol Parameter Definition Min. Typ. Max. Units Test Conditions
R
Θjc
Thermal Resistance, Junction to Case — 3.0 — °C/W
R
ΘjA
Thermal Resistance, Junction to Ambient — 60 — °C/W
IRSF3010
3
Notes:
1. E
AS
is tested with a constant current source of 11A applied for 700µS with V
in
= OV and starting T
j
= 25
o
C.
2. Input current must be limited to less than 5mA with a 1kΩ resistor in series with the input when the Body-Drain Diode
is forward biased.
Symbol Parameter Definition Min. Typ. Max. Units Test Conditions
V
ds,clamp
Temperature Coefficient of Drain to Source
Clamp Voltage — 18.2 —
V
th
Temperature Coefficient of Input Threshold
Voltage — -3.2 —
V
in,clamp
Temperature Coefficient of Input Clamp
Voltage — 7.0 —
I
ds(sd)
Temperature Coefficient of Over-Current
Shutdown Threshold — -21.5 — mA/
o
C
I
ds
= 10mA
V
ds
= 5V, I
ds
= 1mA
I
in
= 10mA
V
in
= 5V
mV/
o
C
Temperature Coefficients of Electrical Characteristics:
(Please see Figures 3 through 14 for more data on thermal characteristics of other electrical parameters.
Symbol Parameter Definition Min. Typ. Max. Units Test Conditions
t
don
Turn-On Delay time — 425 650 V
in
= 5V
— 150 — V
in
= 10V
t
r
Rise Time — 2000 4000 V
in
= 5V
— 425 — V
in
= 10V
t
doff
Turn-Off Delay time — 650 1000 V
in
= 5V
— 850 — V
in
= 10V
t
f
Fall Time — 500 800 V
in
= 5V
— 450 — V
in
= 10V
Switching Electrical Characteristics:
(V
cc
= 14V, Resistive Load R
L
= 5Ω, T
c
= 25 °C.) Please refer to Figure 15 for switching time definitions.
nS
Symbol Parameter Definition Min. Typ. Max. Units Test Conditions
I
ds(sd)
Over-Current Shutdown Threshold 11 14 17 A Vin = 5V
T
j(sd)
Over Temperature Shutdown Threshold 155 165 — °C V
in
= 5V, Ids = 2A
V
protect
Minimum Input Voltage for Over-temp fxn. — 3 — V
t
Iresp
Over Current Response Time — 2 — See figure 16 for definition
t
Iblank
Over Current Blanking Time — 3 — See figure 16 for definition
I
peak
Peak Short Circuit Current — 20 — A See figure 16 for definition
V
reset
Protection Reset Voltage — 1.3 — V
t
reset
Protection Reset Time — 7 — See figure 17 for definition
t
Tresp OverTemperature Response Time
— 12 — See figure 18 for definition
µS
µS
Protection Characteristics:
(T
c
= 25 °C unless otherwise specified.)
P1-P3P4-P6P7-P9P10-P11

IRSF3010S

Mfr. #:
Buy IRSF3010S
Manufacturer:
Infineon Technologies
Description:
IC FET SMART SW 50V 11A D2PAK
Lifecycle:
New from this manufacturer.
Delivery:
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